本論文是利用外腔半導體雷射系統可輕易調整其波長與多通道
輸出的特性與電致光吸收調變器在外加偏壓下之Quantum Confined
Stark Effect(QCSE)特性 , 開發一種新型外腔波長可調且可多波長
輸出之Q-switched 調變技術 , 並實現一個擁有多通道波長可調且
速度極快、並可共線同時輸出之Q-Switched 雷射。
外腔半導體雷射系統搭配850nm 與830nm VCSEL 加以逆偏壓所
形成的電致光吸收調變器其單一波長調變速度可達63ns , 可調範圍
可達0.9nm ,每一通道間的間隔為0.2nm 。 並利用雙電致光吸收調
變器在特定回授位置上獲得的雙通道雙波長的輸出 , 其波長間距為
4.61 nm。

This thesis utilized the characteristics of the external cavity
system including the wavelength tuning and the multi-channel output, and
using the Quantum Confined Stark Effect (QCSE) by adding the bias on the
electro-absorption modulator to build a new method of the Q-switched
modulation .The method made the wavelength tuning and multi-channel
output of high speed Q-switched external cavity semiconductor laser with
the colinear output come true .
The system of the external cavity semiconductor laser with the
electro-absorption modulator making of the VCSEL with the wavelength
850nm and 830nm could be modulated to 63ns . The tuning range could be
up to 0.9nm . Each of the channel would be separated into 0.2nm .
We could obtain the two channels output by using the double
electro-absorption modulators on the specific position .The distance of
the wavelength is 4.61nm.

中文摘要............................................................... i
英文摘要............................................................... ii
誌謝....................................................................... iii
目錄....................................................................... iv
圖表目錄............................................................... v

第一章 序論
1-1 前言..................................................................1
1-2 動機及目的......................................................3
1-3 論文架構..........................................................4
第二章 外腔半導體雷射與電致光吸收調變
2-1 半導體雷射......................................................5
2-2 波長可調半導體雷射..................................... 8
2-2.1 波長連續可調外腔半導體雷射原理..........14
2-2.2 外腔式半導體雷射線寬壓縮現象..............19
2-2.3 外腔式半導體雷射模態躍遷現象..............21
2-3 電致光吸收調變與背景
2-3.1 載子躍遷特性..............................................24
2-3.2 量子侷限史塔克效應..................................25
第三章 實驗方法與架構
3-1 連續波長外腔式可調半導體雷射結構設計 .29
3-2 雙波長外腔半導體雷射系統 .........................38
3-3 電致光吸收調變器回授 .................................39
第四章 結果討論....................................................42
第五章 總結與未來展望........................................68
參考資料 ................................................................72

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