本論文主要研究單壁奈米碳管(SWCNT SA)飽和吸收體(SWCNT SA)在不同單壁奈米碳管濃度和薄膜厚度下對所表現出的被動鎖模雷射脈衝寬度影響。挑選適當內徑之單壁奈米碳管，使其在光通訊1550nm波長有非線性吸收特性，及可在摻鉺光纖之工作波段，將單壁奈米碳管製成複合材料薄膜飽和吸收體，並在掺鉺光纖雷射架構下探討奈米碳管飽和吸收體之被動鎖模雷射特性。首先利用界面活性劑(SDBS)分散單壁奈米碳管，接著將經過分散之單壁奈米碳管製成SWCNT SA薄膜，量測其厚度和光學吸收特性，最後置入掺鉺光纖被動鎖模雷射架構中量測不同厚度和碳管摻雜濃度下的鎖模雷射脈衝寬度。實驗結果顯示，當SWCNT SA厚度固定為8um時，高濃度之SWCNT SA鎖模後的脈衝波形會更接近反雙曲線，其脈衝的軌跡會比較穩定，當碳管濃度在0.05 wt%有最佳輸出脈衝寬度(FWHM) 2.02 ps。在不同厚度之SWCNT SA的脈衝寬度趨勢方面，當碳管濃度固定為0.0125 wt%時，將厚度提升至100 um以上可大幅提升其鎖模狀態穩定性並縮短脈衝寬度至1.88 ps。因此控制SWCNT SA之濃度及薄膜厚度可以使鎖模雷射達到穩定的脈衝波形和最佳脈衝寬度，進而使得SWCNT SA達到製程簡單、低成本且高效能之目的。

The dependence of single-wall carbon nanotubes-based saturable absorber (SWCNTs SA) on concentration and thickness for mode-locked laser pulse formation is comprehensively investigated. The peak absorption wavelength of SWCNTs SA is engineered within the gain band-width of erbium-doped fiber centered near 1550 nm. The optima full-width half-maximum (FWHM) of pulses was obtained as the concentrations of SWCNTs SA was 0.05 wt%. This indicates that the laser pulse become shorter as the concentration of SWCNTs SA increases. The result also showed that the FWHM of pulses from 3.43 to 1.85 ps were found as the thickness of SWCNTs SA increased from 8 to 100 um. This also indicates that the laser pulse become shorter as the thickness of SWCNTs SA increases. However, the pulse width significantly broadened as concentration increased to 0.1 wt% and became stable as thickness of SWCNTs SA increased from 100 to 264 um for passively mode-locked lasers. An in-depth study on the optimum fabrication of concentration and thickness of SWCNTs SA for laser pulse formation may allow developing a cost-effective mode-locked laser with high performance as well as broadly benefit to the utilization of many other low-cost nanodevices.

內容目錄
中文摘要 I
英文摘要 II
致 謝 III
內容目錄 IV
圖表目錄 VII
第一章 導論論…………………………………… 1
1.1 研究目的…………………………………… 1
1.2 論文架構…………………………………… 3

第二章 鎖模雷射的動作機制及原理 …………… 4
2.1 模態鎖定原理 ………………………………4
2.2 模態鎖定之方法…………………………… 7
2.2.1 主動式鎖模…………………………… 9
2.2.2 被動式鎖模…………………………… 11
2.3 飽和吸收體介紹………………………… 13
2.3.1 半導體飽和吸收鏡…………………… 13
2.3.2 克爾透鏡……………………………… 15
2.3.3 單壁奈米碳管掺雜飽和吸收體……… 16
2.4 飽和吸收體之非線性吸收特性……………19

第三章 單壁奈米碳管飽和吸收體製程………… 23
3.1 奈米碳管簡介…………………………… 24
3.2 奈米碳管之結構與半導體特性…………… 25
3.3 飽和吸收體內單壁奈米碳管之分散…… 32
3.3.1 奈米碳管叢聚現象……………………32
3.3.2 界面活性劑分散機制…………………34
3.3.3 飽和吸收體分散性量測………………36
3.4 單壁奈米碳管飽和吸收體之成膜…………40
3.5 單壁奈米碳管飽和吸收體特性量測………43
3.5.1 飽和吸收體吸收度量測……………… 43
3.5.2 飽和吸收體厚度量測………………… 45

第四章 被動鎖模雷射架構與量測……………… 49
4.1 環形雷射架構與組成元件特性……………49
4.2 實驗及量測結果……………………………54
4.2.1 起始鎖模功率量測…………………… 54
4.2.2光譜及脈衝寬度量測………………… 56
4.2.3 光譜與脈衝寬度趨勢分析…………… 61

第五章 結論………….…………………………… 64
5.1 結論…………………………………………64
5.2 未來方向……………………………………65
參考文獻………………………………………… 66

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