以銅箔為基材使用低壓化學氣象沉積法(LPCVD) ，再藉由調控不同溫度(850~1000oC)、反應時間(10~30分鐘)、反應氣體的流速比例(甲烷:氫氣)生長單層、雙層或少數層石墨烯，再在石墨烯上以銅觸媒催化生長奈米碳管。本研究中藉由調控不同溫度(800~1000oC)、時間(1~5分鐘)、反應氣體的流速比例(甲烷:氫氣)及金屬觸媒濃度，來控制石墨烯/奈米碳管混成材料的各種特性，並以拉曼光譜儀、電子顯微鏡等儀器來探討不同反應條件對奈米碳管/石墨烯生長的影響。

Based on Cu foil, using LPCVD method with different temperature, reaction time, and CH4/H2 ratio to synthesize single, double, or few layers graphene. Then using Cu to catalyze CNT on graphene. This research uses different temperature, time, reaction gas ratio(CH4/H2), and concentration of metal to control the characteristic of G-CNT. Besides, using Raman spectroscopy, SEM, and TEM to discuss the influence of different reaction factors to the growth of G-CNT.
Results indicated that when reaction temperature at 1000 oC, CH4/H2 ratio equals 5:1, and reacting for 25 minutes can produce the best quality of few layers graphene. Using Cu metal catalyst to grow CNT on graphene directly, amounts and size of CNT along with carbon source and time increase would become more and bigger, but accompany with more defects. When reaction temperature become higher, size and amount of CNT would also increase, but defects reverse.

論文審定書 i
誌謝 ii
摘要 iii
Abstract iv
圖目錄 vii
表目錄 x
第一章 緒 論 1
1-1前言 1
1-2研究動機 1
1-3石墨烯之結構 2
1-3-1力學特性 3
1-3-2電學性質 3
1-4石墨烯的製備方法 4
1-4-1機械剝離法(mechanical exfoliation) 4
1-4-2氧化石墨還原法(reduction of graphene oxide) 5
1-4-3外延生長法(Epitaxial growth) 6
1-4-4化學氣相沈積法(chemical vapor deposition, CVD) 7
1-5以CVD法在銅基材上生長石墨烯之反應機制 8
1-6奈米碳管之基本特性 9
1-7化學氣相沉積法(CVD)製造奈米碳管的生長機制 11
第二章 實驗方法 13
2-1實驗樣品 13
2-2實驗步驟 14
2-3實驗裝置 15
2-4分析方法 16
2-4-1拉曼光譜分析儀 ( Raman Spectrometer ) 16

2-4-2場發射型掃描式電子顯微鏡(SEM，Scanning Electron Microscope) 18
2-4-3穿透式電子顯微鏡 (TEM，Transmission Electron Microscope) 19
第三章 結果與討論 20
3-1銅箔上生長石墨烯 20
3-1-1不同反應時間對石墨烯之影響 20
3-1-2不同反應溫度對石墨烯之影響 22
3-1-3不同氣體流量對石墨烯之影響 24
3-1-4石墨烯在SEM觀察下之形貌 26
3-2金屬催化奈米碳管生長 27
3-2-1鎳金屬催化奈米碳管生長 27
3-2-2反應時間對鎳觸媒催化奈米碳管生長之影響 29
3-2-3反應溫度對鎳觸媒催化奈米碳管生長之影響 31
3-2-4碳源流量對鎳觸媒催化奈米碳管生長之影響 33
3-2-5反應時間對銅觸媒催化奈米碳管生長之影響 34
3-2-6反應溫度對銅觸媒催化奈米碳管生長之影響 36
3-2-7碳源流量對銅觸媒催化奈米碳管生長之影響 40
3-2-8穿透式電子顯微鏡下觀察之形貌 47
第四章 結論 48
第五章 參考文獻 49

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