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博碩士論文 etd-0710101-144648 詳細資訊
Title page for etd-0710101-144648
論文名稱
Title
非對稱型多重量子井光點轉換雷射
Asymmetric Multi-Quantum-Well Spot-Size Converter Lasers
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
65
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2001-06-15
繳交日期
Date of Submission
2001-07-10
關鍵字
Keywords
非對稱型、多重量子井
Multi-Quantum-Well, Asymmetric
統計
Statistics
本論文已被瀏覽 5730 次,被下載 33
The thesis/dissertation has been browsed 5730 times, has been downloaded 33 times.
中文摘要
中文摘要

本研究的目的為研製具有光點轉換效果之多重量子井雷射,以提高半導體雷射和光纖之耦合效率,在半導體材料上我們採用長波長材料磷砷化鎵銦/磷化銦。結構設計上分為垂直方向和水平方向設計。垂直方向設計為採用非對稱型多重量子井,其厚度分別為50-50-100-100-150-150Å,其目的在使光主要聚集在量子井厚為150Å處,並且在其下方加入一被動波導,以擴大其光場分佈。水平方向設計為採用漸窄式波導(2.5 至1微米)和漸寬式波導(2.5至4微米),漸窄式波導目的為減少水平光場的侷限,漸寬式波導目的為增加水平向的發光區域,藉以改善水平發散角。
經由實驗結果得知,在室溫時,只有非對稱型多重量子井漸寬式波導2.5至4微米(200-250-50)脊狀雷射具有連續電流操作特性,臨限電流為34mA,其水平發散角為14°,而垂直發散角為36°,而漸窄式波導在室溫時僅具有脈衝電流操作特性,但在13°C時即具有連續電流操作特性,其水平發散角為14°,垂直發散角為36°。經由I-V,C-V量測得知,良率不佳原因可能為磊晶n型摻雜濃度分佈不正確,形成較大的串聯電阻所致。由於非對稱結構只具有單邊被動波導,故發散角較一般結構有雙邊被動波導大。但經由這樣設計,其結果還是較一般脊狀雷射的25°´45°有明顯的改善。

Abstract
Abstract

The purpose of this thesis is to fabricate l = 1.55mm ridge waveguide spot size converter lasers for high laser-to-fiber coupling. The laser structure design includes the lateral and vertical directions. In the vertical aspect, we use six asymmetric InGaAsP/InP quantum wells of 50, 50, 100, 100, 150, 150Å. The asymmetric multi-quantum-well structure is designed to gather the optical field in the 150Å-wide quantum wells. Besides, we add a passive waveguide near the 150Å-wide quantum wells to expand optical field profile. In the lateral aspect, we use tapered ridge waveguides which have two different fashions: one is tapered down from 2.5mm to 1mm, and the other is tapered up from 2.5mm to 4mm.
The results show that the tapered-up ridge waveguide laser has a CW operation with Ith = 34mA and diverge angles of 14°×36° (q//×q^) at room temperature. The tapered-down ridge waveguide laser exhibits only a pulsed operation at room temperature. At lower temperature T = 13°C, the tapered-down laser has a CW operation of Ith = 36mA and diverge angles of 14°×36°(q//×q^). From I-V and C-V measurements, we attribute the heating problem to the large series resistance caused by the incorrect n-type doping profile in the epitaxy process.
目次 Table of Contents
目錄
第一章 簡介
1-1前言 1
1-2光點轉換雷射種類 2
第二章 半導體雷射原理
2-1前言 5
2-2半導體雷射結構 7
2-2-1前言 7
2-2-2光點轉換雷射 7
第三章 結構設計
3-1前言 11
3-2光點轉換雷射設計方向 11
3-2-1設計原理 11
3-2-2垂直方向設計 12
3-2-3水平方向設計 16
3-2-4 BPM-CAD模擬 17
3-3非對稱與對稱多重量子井結構光激放光(PL)量測 18
3-3-1光激放光量測 18
3-3-2非對稱與對稱多重量子井結構PL量測結果 20
第四章 製程步驟
4-1寬面積雷射製程 21
4-2脊狀雷射製程 24
第五章 結果與分析
5-1 BA量測結果 33
5-2光點轉換雷射之量測結果 38
5-2-1電流-電壓(I-V)曲線 38
5-2-2光電(L-I)曲線 38
5-2-3 C-V measurement 40
5-2-4雷射輸出光譜 49
5-2-5遠場發散角的量測 51
第六章 結論
參考文獻 63
附錄A 65















參考文獻 References
參考文獻
1. Y. Inaba, M. Kito, T. Nishikawa, M. Ishino, Y. Matsui, “High-Temperature Operation of 1.3mm Tapered-Active-Stripe Laser for Direct Coupling to Single-Mode Fiber,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 3, pp. 1399-1401, 1997.
2. K. Kasaya, O. Mitomi, M. Naganuma, Y. Kondo, Y. Noguchi, “A simple laterally tapered waveguides for low-loss coupling to single-mode fibers,” IEEE Photon. Technol. Lett., vol. 5, pp. 345-347, 1993.
3. H. Bissessur, C. Graver, O. Le Gouezigou, G. Michaud, F. Gaborit, “Ridge Laser with Spot-Size Converter in a Single Epitaxial Step for High Coupling Efficiency to Single-Mode Fibers,” IEEE Photon Technol. Lett., vol. 10, pp. 1235-1237, 1998.
4. M. Wada, H. Okamoto, M. Kohtoku, K. Kawano, Y. Kadota, Y. Kondo, K. Kishi, S. Kondo, Y. Sakai, I. Kotaka, Y. Noguchi, Y. Itaya, “Fabrication and coupling-to-fibre characteristics of laser diodes integrated with a spot-size converter having a lateral taper,” IEE Proc.-Optoelectron., vol. 144, pp. 104-108, 1997.
5. H. Yamazaki, K.Kudo, T. Sasaki, Jun’ichi Sasaki, Y. Furushima, Y. Sakata, M. Itoh, M. Yamaguchi, “1.3mm Spot-Size-Converter integrated Laser Diodes Fabricated by Narrow-Stripe Selective MOVPE,” IEEE Journal of Selected Topics in Quantum Electronic, vol. 3, pp. 1392-1397, 1997.
6. H.Kobayashi, T.Yamamoto, “Narrow-Beam Divergence 1.3-mm Multi-Quantum Well Laser Diodes with Monolithically Integrated Tapered Thickness Waveguide,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 3, pp. 1384-1390, 1997.
7. Y. Itaya, Y. Tohmori, H. Toba, “Spot-size converter integrated laser diode (SS-LD’s),” IEEE Journal of Selected Topics in Quantum Electronic, vol. 3, pp. 968-974, 1997.
8. K. Yokoyama, N. Sekino, T. Hirono, Y. Tohmori, Y. Kawaguchi, “Design and Fabrication of High-Coupling Efficiency Spot-Size Converter Integrated Laser Diodes Using Three-Dimensional BPM Program,” Journal of Lightwave Technol., vol. 16, pp. 1456-1463, 1998.
9. Michael J. Hamp, Daniel T. Cassidy, B. J. Robinson, Q. C. Zhao, and D. A. Thompson, “Effect of barrier thickness on the carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers,” IEEE Photonics Technol. Lett., vol. 12, pp. 134-136, 2000.
10. P. Steinmann, B. Borchert, B. Stegmüller, “Asymmetric Quantum Wells with Enhanced QCSE: Modulation Behavior and Application for Integrated Laser/Modulator,” IEEE Photon. Technol. Lett., vol. 9, pp. 191-193, 1997.
11. 張俊彥譯, “半導體元件物理與製作技術,” pp. 305, pp. 326.
12. G. P. Agrawal and N. K. Dutta, Semiconductor Laser, 2nd ed., chap.2, pp. 40.


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