摘 要
本文主要是以光致螢光的方法來研究銦砷化鎵/砷化鎵之量子井，當試片受到不同熱退火溫度處理後，在光致螢光(PL)光譜上所產生的變化。我們分成二個部份來討論：一、討論光致螢光光譜上峰的位置的改變，主要是由於量子井的互相混合(intermixing)現象所造成的結果。二、改變激發雷射光的強度，來探討二維載子躍遷及三維載子躍遷的差異。

Abstract
We discuss the PL spectra of Ga2O3(Gd2O3)/GaAs/In0.2Ga0.8As/GaAs quantum well with different annealing temperatures. First, we discuss the peak position of PL spectra. The peaks shift with different annealing temperatures, and it is due to the quantum well intermixing. Second, the excitation density dependence of In0.2Ga0.8As/GaAs quantum well is performed. We discuss the difference of 2D transition for quantum well and 3D transition for bulk GaAs.

Contents

Chapter 1 INTRODUCTION
1-1 Introduction 1
1-2 Oxide layer of Ga2O3(Gd2O3) 3
Chapter 2 THEOTY
2-1 Strained Quantum Well 5
2-2 Photoluminescence 9
2-3 Temperature Dependence of Photoluminescence Spectra 10
Chapter 3 EXPERIMENT SYSTEM
3.1 Photoluminescence System 16
Chapter 4 Results and Discussion
4-1 Samples 26
4-2 Photoluminescence Spectra of Ga2O3(Gd2O3)/GaAs/In0.2Ga0.8As /GaAs Quantum Well 28
4-3 Photoluminescence Spectra of Ga2O3(Gd2O3)/GaAs/In0.2Ga0.8As /GaAs Quantum Well with Different Excitation Density 38

4-4 Temperature Dependence of Ga2O3(Gd2O3)/GaAs/In0.2Ga0.8As /GaAs Quantum Well Photoluminescence Spectra 39
Chapter 5 Conclusion 59

Reference 60

Appendix A: Project of GaN Quantum Dot
A-1 Introduction 62
A-2 Samples 63
A-3 Result and Discussion 64
Appendix B: Photoluminescence Spectra of GaN with Different Etching Time
B-1 Motivation 71
B-2 System and Procedure 72
B-3 Samples 74
B-4 Discussion 75
Appendix C: Program of Quantum Well Bound State Energy 78


Table list

Table 2-1 Material parameters to find energy levels in InxGa1-xAs quantum well 12
Table 2-2 Deformation potential comparisons 13
Table 4-1 The description of the samples 27
Table 4-2 The experiment and total calculation result 37

Reference

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