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博碩士論文 etd-0710103-110047 詳細資訊
Title page for etd-0710103-110047
論文名稱
Title
高效率2.4 GHz E類功率放大器單晶微波積體電路及模組之設計與實作
Design and Implementation of High-Efficiency 2.4 GHz Class-E Power Amplifier MMICs and Modules
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
62
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2003-07-01
繳交日期
Date of Submission
2003-07-10
關鍵字
Keywords
E類功率放大器、功率增加效率、單晶微波積體電
MMIC, Power Added Efficiency, Class E Power Amplifier
統計
Statistics
本論文已被瀏覽 5752 次,被下載 6314
The thesis/dissertation has been browsed 5752 times, has been downloaded 6314 times.
中文摘要
本論文前半段主要是介紹E類功率放大器之工作原理。透過電路模型與模擬,觀察理想與非理想E類功率放大器特性表現。本論文後半段主要是依據E類功率放大器設計原理,完成應用於2.4GHz頻段藍芽系統之E類功率放大器實作。單晶微波積體電路部份,利用全球聯合通信(GCTC)及穩懋(WIN)公司所提供的 GaAs 2μm HBT製程來完成E類功率放大器單晶微波積體電路設計。在偏壓電源為3.3伏特情形下,輸出功率為20dBm,增益分別為23dB與11dB,功率增加效率可達57%與72%。Hybrid模組部份,利用Filtronic公司所生產之GaAs PHEMT電晶體,搭配設計之外部電路後,完成兩級E類功率放大器Hybrid模組。在偏壓電源為3.3伏特情形下,輸出功率為20dBm,增益為25dB,功率增加效率可達75%。由實作結果,在2.4GHz頻段藍芽系統,相較於市面上其他類型之功率放大器,E類功率放大器具有提升功率增加效率之能力,延長通訊系統使用時間。
Abstract
This thesis consists of two parts. Part 1 introduces the characteristics of Class E power amplifier. Part 2 is focused on the implementation of Class E power amplifier for 2.4GHz Bluetooth applications. The design procedure follows the theory of class E power amplifier, and is implemented in MMICs and modules. For MMICs, the GaAs HBT foundry services are provided by the GCTC Ltd. and WIN Ltd.. Under single supply voltage of 3.3V and the output power of 20dBm, two designed MMICs have gain 23dB and 11dB, and power added efficiency (PAE) 57% and 72%, respectively. For Hybrid modules, RF transistors are provided by the Filtronic Ltd.. Under the same supply voltage of 3.3V, the measured output power, gain, and power added efficiency are 20 dBm, 25dB, and 75% respectively. Compared with the other types of power amplifiers on the market, Class E power amplifier has higher power added efficiency, and thus can increase the using time of communication system.
目次 Table of Contents
目錄 ..................................................I
圖表目錄 .................................................II
第一章 緒論 .........................................1
第二章 E類功率放大器 ................................3
2.1 理想E類功率放大器架構介紹..............................3
2.2 非理想E類功率放大器....................................8
第三章 應用於藍芽系統之E類功率放大器MMIC設計............10
3.1 簡介..................................................10
3.2 第一顆E類功率放大器MMIC設計模擬與實作測量.............10
3.3 第二顆E類功率放大器MMIC設計模擬與實作測量.............23
3.4 藍芽射頻規範下之量測結果..............................30
第四章 應用於藍芽系統之E類功率放大器Hybrid電路模組設計..40
4.1 簡介..................................................40
4.2 單級Hybrid E類功率放大器設計方法及量測結果............40
4.3 設計兩級功率放大器Hybrid模組及量測結果................46
4.4 於藍芽系統規範下兩級功率放大器Hybrid模組之量測結果....54
第五章 結論.............................................59
參考文獻..................................................60
參考文獻 References
[1] Steve C. Cripps, RF power amplifiers for wireless communications. Artech House, 1999.
[2] Peter B. Kenington, High-linearity RF amplifier design. Artech House, 2000.
[3] David K. Su, and William J. McFarland, “An IC for linearizing RF power amplifiers using envelope elimination and restoration,” IEEE Journal of Solid-State Circuits, vol. 33, pp. 2252-2258, Dec. 1998.
[4] Frederick H. Raab, Bernard E. Sigmon, Ronald G. Myers, and Robert M. Jackson, “L-band transmitter using Kahn EER technique,” IEEE Transactions on Microwave Theory and Techniques, vol. 46, pp. 2220-2225, Dec. 1998.
[5] King-Chun Tsai, and Paul R. Gray, “A 1.9-GHz, 1-W CMOS class-E power amplifier for wireless communications,” IEEE Journal of Solid-State Circuits, vol. 34, pp. 962-970, Jul. 1999.
[6] Changsik Yoo, and Qiuting Huang, “A common-gate switched, 0.9 W class-E power amplifier with 41% PAE in 0.25 μm CMOS,” IEEE Journal of Solid-State Circuits, vol. 36, pp. 56-57, May. 2001.
[7] W-abey, T. Kawai, I. Okamoto, M. Suzuki, C. Khandavalli, W. Kennan, Y. Tateno, M. Nagahara, M. Takikaka, “An E-mode GaAs FET power amplifier MMIC for GSM phones,” IEEE MTT-S International Microwave Symposium, vol. 3, pp. 1315-1318, Jun. 1997.
[8] Tirdad Sowlati, C. Andre T. Salama, John Sitch, Gord Rabjohn and David Smith, “Low voltage, high Efficiency class E GaAs power amplifiers for mobile communications,” IEEE GaAs IC Symposium, pp. 171-174, Oct. 1994.
[9] N. O. Sokal and A. D. Sokal, “Class-E-A new class of high efficiency tuned single-ended switching power amplifiers,” IEEE Journal of Solid-State Circuits, vol. 10, pp. 168-176, Jun. 1975.
[10] C. Wang, L. E. Larson and P. M. Asbeck, “Improved design technique of a microwave class-E power amplifier with finite switching-on resistance,” IEEE Radio and Wireless Conference, pp. 241-244, Aug. 2002.
[11] David K. Choi, and Stephen I. Long, “A physically based analytic model of FET Class-E power amplifiers-designing for maximum PAE,” IEEE Transactions on Microwave Theory and Techniques, vol. 47, pp. 1712-1720, Sep. 1999.
[12] Chung Kei Thomas Chan and Chris Toumazou, “Design of a class E power amplifier with non-linear transistor output capacitance and finite DC-feed inductance,” IEEE International Symposium on Circuits and Systems, vol. 1, pp. 129-132, May. 2001.
[13] Steve Hung-Lung Tu and Chris Toumazou, “Design of highly-efficient power-controllable CMOS class E RF power amplifiers,” IEEE International Symposium on Circuits and Systems, vol. 2, pp. 602-605, Jun. 1999.
[14] Steve Hung-Lung Tu and Chris Toumazou, “Design of low-distortion CMOS class E power amplifier for wireless communications,” IEEE International Conference on Electronics, Circuits and Systems, vol. 3, pp. 1433-1436, Sep. 1999.
[15] Steve Hung-Lung Tu and Chris Toumazou, “Effect of the loaded quality factor on power efficiency for CMOS class-E RF tuned power amplifiers,” IEEE Transactions on Circuits and Systems I, vol. 46, pp. 628-634, May. 1999.
[16] Frederick H. Raab, “Electronically tunable class-E power amplifier,” IEEE MTT-S International Microwave Symposium, vol.3, pp. 1513 –1516, May. 2001.
[17] Bao-Xin Gao, and Ying WangHigh, “High efficiency power amplifier using Ge/Si HBT,” Asia-Pacific Microwave Conference, pp. 161-164, Dec. 2000.
[18] Steve Hung-Lung Tu and Chris Toumazou, “Highly efficient CMOS class E power amplifier for wireless communications,” IEEE International Symposium on Circuits and Systems, vol. 3, pp. 530-533, Jun. 1998.
[19] Michael J. Chudobiak, “The use of parasitic nonlinear capacitors in class E amplifiers,” IEEE Transactions on Circuits and Systems I, vol. 41, pp. 941-944, Dec. 1994.
[20] Marian K. Kamizierczuk and Krzysztof Puczko, “Power-output capability of class E amplifier at any loaded Q and switch duty cycle,” IEEE Transactions on Circuits and Systems, vol. 36, pp. 1142-1143, Aug. 1989.
[21] Andrew J. Wilkinson, and Jeremy K. A. Everard, “Transmission-line load-network topology for class-E power amplifiers, “IEEE Transactions on Microwave Theory and Techniques, vol. 49, pp. 1202-1210, Jun. 2001.
[22] 黃建祥、洪子聖, “藍芽系統射頻規格測試與相關混合積體電路設計,” 國立中山大學碩士論文, Jul. 2002.
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