本論文提出一個以配合基頻系統單晶片(SOC)，可植入人體的神經微電刺激介面之類比前端電路。前述的神經介面包括可控制的刺激器及用作傳送資料和電能的遙測裝置，經由體外的傳送線圏來通訊和提供電源，以穿透皮膚的耦合電磁轉換成電能之方式驅動，能夠避免受感染的風險與電池有限壽命的問題。

本論文之類比前端電路設計中第一個主題提出以一個單級的差動放大器作為LDO (Low Dropout)穩壓器的誤差放大器，提高工作頻寬和減少晶片的面積。其配合一個不隨外部環境變化的能隙參考電壓源和透過電阻分壓的迴授後，可以在輸出提供一個穩定的電壓，作為晶片內部其他電路的工作電源。

第二個主題提出以無需使用大電容的ASK (Amplitude Shift Keying)解調器，應用在植入式微電刺激系統整合單晶片中，使得晶片佈局所需要面積大幅降低，並且不損及其效能。

An analog frontend of an implantable baseband SOC (System-on-a-chip) chip design for the interface of neural micro-stimulation is present in this thesis. The mentioned neural interface including controllable stimulators, and telemetry for data and power transmission which is powered by transcutaneous magnetic coupling. An external transmitter coil is required to power and communicate with the implanted device. It can avoid the risk of causing infection and the problem of limited battery life.

The first topic of this thesis proposes a single stage differential amplifier to be used as an Error Amplifier in an LDO (Low Dropout) regulator. It increases the bandwidth and decreases the chip’s area at the same time. When a bandgap bias is integrated with our design in a feedback loop, a stable voltage source is constituted to become a power supply for the entire implanted chip.

The second topic reveals a C-less (no capacitor) area-saving ASK (Amplitude Shift keying) demodulator. Since there is no capacitor used in the demodulator, it can substantially reduce the layout area of the SOC without any sacrifice of the performance of the SOC

摘要 i
Abstract ii
第一章 緒論 1
1.1 前言 1
1.2 論文所研究系統之說明 3
1.2.1 植入式微電刺激系統架構說明 4
1.2.2 系統之電能轉換電路說明 5
1.3 先前文獻探討 8
1.3.1 相關穩壓器架構 8
1.3.2 相關ASK解調器架構 10
1.4 論文大綱 14
第二章 植入式晶片之寬頻線性穩壓器 15
2.1 簡介 15
2.2 線性穩壓器工作原理 15
2.3 電路設計 19
2.3.1 本設計之線性穩壓器電路說明 19
2.3.2 頻率補償考量 28
2.3.3 佈局前模擬結果 31
2.4 晶片量測 35
2.4.1 量測方法與量測儀器 35
2.4.2 預計規格與量測規格 35
2.4.3 量測波形圖與晶片照相圖 36
2.5 量測後討論與電路改進 37
第三章 植入式晶片之中頻帶無電容ASK解調器 39
3.1 簡介 39
3.2 電路設計　 40
3.2.1 本設計之ASK解調器電路架構說明 40
3.2.2 電路工作原理說明 44
3.3 晶片量測 48
3.3.1 量測方法與量測儀器 48
3.3.2 預計規格與量測規格 49
3.3.3 量測波形圖與晶片照相圖 50
3.4 量測後討論與電路改進 52
第四章 結論與相關成果 53

參考文獻 54

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