短共振腔雷射操作在單縱模之下，由於較大的縱模間距與SMSR，使得短腔雷射在不同的驅動電流與操作溫度下，具有較佳的輸出線性與穩定性，因此我們利用光纖光柵對波長的選擇性，選擇我們雷射輸出的波長。
本論文中我們將製作1.3μm雷射二極體，並且架設光學系統來量測我們製作的雷射之頻譜與頻率響應。在雷射製作方面我們使用的是脊樑式的結構，脊樑蝕刻完成後，用磁式濺鍍機長上一層SiO2薄膜來保護脊樑表面，塗鋪上高分子材料PMGI，然後利用乾蝕刻方式清除脊樑上方之PMGI直至脊樑上方之SiO2完全露出時停止，接著再利用濕蝕刻方式將脊樑上方之SiO2完全清除乾淨，之後再把PMGI去除，最後鍍上接面金屬；最後完成結構為共振腔長度為200μm。
雷射的起始電壓(turn on voltage)和總阻抗分別為0.8V和9.8Ω，臨界電流和啟動電壓為20mA和1.3V，輸出功率(CW操作下)在電流50mA可達8mW，70mA可達12mW。經由打線連接再由光學量測系統量測雷射之頻率響應，小訊號3dB頻寬約為8GHz(電流70mA)，用光纖光柵與環流器量測單頻光譜將單頻光輸出，經由光譜分析儀可知SMSR約為40dB。

Short cavity lasers have several advantages such as improved output linearity in comparison with long lasers, longitudinal oscillation mode stabilized against the injection level and the operating temperature, and large mode spacing for allowing single-mode operation. In this paper, a short cavity laser has been successfully fabricated.
The waveguides of laser diodes were formed by wet-etching with width of 4μm. A SiO2 thin film was then sputtered onto the sample as surface passivation layer, after that, a PMGI polymer was spun on the sample and used for opening ridge window of metalization. After the SiO2 layers on the top of the ridge were removed, the metalizations were deposited for contact. The final finished laser was 200μm long.
The turn on voltage of the laser diode is 0.8 V with total resistance of 9.8Ω. In the CW operation, the threshold current of laser is 20mA with threshold voltage of 1.3V, reaching total output optical power of 8mW at 50mA and 12mW at 70mA. The small signal frequency response is 8GHz (current 70mA). By adopting fiber grating and circulator to filter the main mode, the side mode suppression ratio (SMSR) of single longitudinal mode is about 40dB, showing single mode operation.

目錄

目錄………………………………………………………………………ii
誌謝 ……………………………………………………………………iii
中文摘要…………………………………………………………………iv
英文摘要 …………………………………………………………………v

第一章 序論………………………………………………………………1
1.1 前言 …………………………………………………………………1
1.2 研究動機 ……………………………………………………………1
1.3 論文架構 ……………………………………………………………2
第二章 理論………………………………………………………………3
2.1 雷射組成 ……………………………………………………………3
2.2 半導體雷射原理 ……………………………………………………4
2.3 雷射種類 ……………………………………………………………7
2.4 穩態下雷射之響應…………………………………………………10
2.5 雷射的暫態特性……………………………………………………16
第三章元件製程…………………………………………………………21
3.1 脊樑式雷射製程……………………………………………………22
3.1.1 脊樑蝕刻……………………………………………22
3.1.2 表面保護絕緣………………………………………27
3.1.3 接面金屬蒸鍍………………………………………31
3.2 討論…………………………………………………………………35
第四章 元件特性量測 …………………………………………………36
4.1 DC量測結果…………………………………………………………36
4.2 雷射頻率響應系統之架設…………………………………………45
4.3 討論…………………………………………………………………48
第五章 結論 ……………………………………………………………50

參考文獻…………………………………………………………………51

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[8]李政鍵,”Unsymmetry Spiked-Quantum Well Design and Electroabsorption Modulators Based on the InAlAs/InGaAlAs Material System” ,NSYSU 2005