本論文旨在研究非對稱多重量子井(AMQW)結構，樣品主要來源有二，一是實驗室以分子束磊晶(MBE)機台成長一系列厚度、排列組合不同以及在主動層不同位置處加入p型調變摻雜的非對稱多重量子井p-i-n雷射結構，另一則是聯亞光電以有機金屬化學氣相沈積(MOCVD)機台所成長排列組合不同的非對稱多重量子井樣品。
實驗上我們利用電致螢光(Electroluminescence EL)量測系統外加給樣品激發電流，使激發出螢光，用來探討這些樣品的光譜形狀、強度以及頻譜分布情形，也利用光調制反射光譜(Photoreflectance PR)量測系統用一雷射光源對這些樣品的介電常數進行調制，並將所得光調制反射光譜圖進行擬合(fitting)以求得躍遷能量，再將光調制反射光譜FKO圖形求其內建電場並與模擬數據相互做比較，並探討在不同排列組合以及不同摻雜條件下個個樣品的躍遷機制。也利用光電流光譜圖、電致吸收系統之吸收變化光譜圖和折射率變化光譜圖加以分析比對。
實驗結果發現C092樣品半高寬可從1.38μm到1.63μm寬達2500Å，為實驗室所設計樣品中最寬的，並發現量子井發光強度與量子井排列位置有關，而排列的位置與樣品所使用材料也有關係，因此即使相同的排列方式但在不同的材料系統下會得到不同的結果。
最後期望可以利用我們所設計出非對稱多重量子井結構的寬頻帶特性來製作寬頻的可調變雷射(broadly tunable laser)和寬頻帶的半導體光放大器(broad-band semiconductor optical amplifier SOA)以應用在未來光通訊網路系統架構中。

The thesis focuses on the study of asymmetric multiple quantum wells (AMQWs). There are two main sources of the samples. One is from our laboratory. We used molecular-beam epitaxy to grow the InGaAs/InGaAlAs AMQWs of different well widths and different position arrangement of well width. And we also designed the AMQWs with p-type modulation doping at the different barrier region. The other is from Land Mark Optoelectronics Corporation. They used Metalorganic Chemical Vapor Deposition (MOCVD) to grow the InGaAsP AMQWs of different well widths and different position arrangement of well width.
There are five experiments in my thesis. First of all, we use electroluminescence (EL) measurement to discuss the EL spectra of the samples. The EL spectra can show the shape, intensity and full width half maximum. Second, we use the photoreflectance (PR) measurement, which uses laser beam to modulate the dielectric constant of samples, to discuss the transition energies by using simulation and curve fitting. And we got build-in electric field from FKO data and simulation. In the last three experiments, we analyzed photocurrent spectra, photoluminescence spectra and electro-absorption spectra individually and then compared the three to all experiments in the thesis.
In these experiments, we discovered that the sample C092 exhibits a broad and flat EL spectrum and 2500Å covering from 1.38~1.63μm. Besides, we also found that the emission of wells is dominated by the arrangement of quantum wells. Moreover, the arrangement of quantum wells is relative to material. Therefore, even if we use the same way of arrangement, the different materials will lead to different results.
Finally, we expect that we can use our AMQWs samples to produce broadly tunable laser and broad-band semiconductor optical amplifier (SOA) in the future.

第一章 緒論 1
1-1 前言 1
1-2 內容架構 2
第二章 實驗樣品介紹 3
2-1 InGaAs/InGaAlAs非對稱多重量子井結構 3
2-2 InGaAsP非對稱多重量子井結構 8
2-3 非對稱多重量子點結構 10
第三章 實驗方法與製程步驟 13
3-1 光激螢光量測 13
3-2 電致螢光量測 15
3-3 光調制反射光譜量測 17
3-4 光電流量測 19
3-5 電制吸收量測 21
3-6 量測元件mesa製程步驟 23
第四章 實驗結果與分析 28
4-1 InGaAs/InGaAlAs非對稱多重量子井實驗分析 28
4-2 InGaAsP非對稱多重量子井實驗分析 71
4-3 非對稱多重量子點實驗分析 77
第五章 結論 84
參考文獻 86

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