本論文利用電子束微影術在InGaAs/InAlGaAs成長在InP基板上其發光波長在1550nm，製作二維光子晶體與側向耦合分佈式回授雷射。以及在980nm的磊晶片方面主要是作二維光子晶體微共振腔，其磊晶結構為InGaAs/GaAs基板上材料方面，我們使用本實驗室之分子束磊晶所成長之磊晶片，在本論文中將包含二維光子晶體與側向耦合分佈式回授雷射之設計及製程。
在側向耦合分佈式回授雷射(即LC(laterally coupled) DFB (distributed feedback)雷射)方面，我們設計透過改變光柵的幾何形狀及長度來形成適當的光柵，而適當的光柵週期所造成的建設性干涉會形成耦合現象，針對不同的光柵週期長度，可發現在共振腔中的耦合強度的改變，我們目前設計一個週期為722nm的光柵，其中反射鏡的厚度為180.55nm，空氣間格為541.65nm，來完成元件的製作。
在1550nm二維光子晶體微共振腔方面，我們設計具有TE極化不存在的光子能隙之二維光子晶體，結構為空氣圓柱呈三角晶格方式排列，圓柱半徑為456nm，晶格常數為1139nm，並在此光子晶體中製作一點缺陷形成單點缺陷微共振腔，我們已完成光子能隙、缺陷模態之計算。
而在製程部份我們使用電子束微影術在光阻上製作圖案，並利用金屬掀離技術製做出之後的蝕刻遮罩，再利用乾蝕刻技術將圖案轉移到底下的介電質及磊晶片上。我們也可用相同方法來製作出980nm光子晶體。

In this thesis, we fabricated the 2D photonic crystal microcavity and laterally coupled distributed feedback laser on InGaAs/InAlGaAs wafers by E-beam lithography. We also fabricated the 2D photonic crystal microcavity on the InGaAs/GaAs substrate at 980nm emission wavelength. The wafer are grown by molecular beam epitaxy (MBE).
For the laterally coupled distributed feedback laser (LC-DFB laser) , we changed the grating shape and length to form proper grating, and it will make constructive diffraction and coupling. We design the mirror width is 180.55nm and the air gap is 541.65nm.
For the 2D photonic crystal (2DPC) microcavity, a triangular array of air columns was adopted. The lattice constant and air columns radius are 1139nm and 456nm, respectively. The TE modes photonic band gap of this structure are corresponding to wavelength range in 1522.72nm~1617.89nm. We placed single defect in the 2DPCs to form 2DPC microcavities and the corresponding defect modes are 1549.23nm and 1550.08nm. We have simulated the photonic bandgap and fabricated the devices by E-beam lithography and deep dry etching process. Also, we can use the same method to fabricate 980nm photonic crystal.

第一章 緒論............................................. 1
1-1 前言......................................... 1
1-2 光子晶體..................................... 1
1-2-1 一維光子晶體.............................. 2
1-2-2 二維光子晶體.............................. 2
1-3 論文架構.................................... 2

第二章 元件設計與模擬................................... 4
2-1 光子晶體介紹................................. 4
2-1-1 何為光子晶體............................ 4
2-1-2 光子晶體中的缺陷........................ 5
2-2 側向耦合分佈式回授雷射介紹....................5
2-3 元件設計與模擬................................6
2-3-1 磊晶片結構.............................. 6
2-3-2 二維光子晶體........................... 12
2-3-3 側向耦合分佈式回授雷射................. 22


第三章 元件製程........................................ 26
3-1 基本原理.................................... 26
3-2 儀器架構.................................... 27
3-3 製程示意圖...................................28
3-3-1 二維光子晶體.......................... 28
3-3-2 側向耦合分佈式回授雷射................ 29
3-4 製程步驟及實驗結果...................... 30
3-4-1 二維光子晶體(1550nm波長)............. 30
3-4-2 二維光子晶體(980nm波長)............... 36
3-4-3 側向耦合分佈式回授雷射.................38

第四章 量測結果........................................ 45

第五章 結果.............................................49

參考文獻................................................ 51


圖目錄

第二章 元件設計與模擬
圖(a) 具有點狀缺陷的光子晶體...................... 5
圖(b) 具有線狀缺陷的光子晶體.......................5
圖2-1 C044 PL光譜圖............................. 8
圖2-2 C100 PL光譜圖............................ 11
圖2-3 C111 PL光譜圖............................ 11
圖2-4 TLAC結構示意圖.......................... 13
圖2-5 TLAC結構之unit cell........................ 13
圖2-6 TLA結構RA比與光子能隙關係圖............. 15
圖2-7 TLAC結構材料和空氣折射率之差與光子能隙關係圖.......................................15
圖2-8 以C100為基板之RA比與光子能隙之關係圖.....16
圖2-9 完美TLAC模擬結構示意圖..... .......... ...17
圖2-10 完整TLAC結構TE及TM光子能帶圖......... 18
圖2-11 完整TLAC結構TE光子能帶圖............... 18
圖2-12 完整TLAC結構TE光子能帶放大圖........... 19
圖2-13 含有單一點缺陷之TLAC模擬結構圖.......... 20
圖2-14 模擬含單一點缺陷TLAC結構所使用之super cell
........................................ 20
圖2-15 含單一點缺陷TLAC結構之TE光子能帶圖..... 21
圖2-16 光波在週期為Λ的光柵結構中產生布拉格散射示意圖...................................... 23
圖2-17 光柵(grating)示意圖........................ 24
圖2-18 觀察反射率變化之模擬結構圖............... 24
圖2-19 光柵週期為100............................ 25

第三章 元件製程
圖3-1 電子打斷化學鍵示意圖....................... 26
圖3-2 儀器裝置圖................................. 27
圖3-3 經lift-off後之光子晶體........................ 32
圖3-4 經RIE之後的光子晶體........................ 33
圖3-5 光子晶體微共振腔正面放大圖(乾蝕刻1分鐘).... 34
圖3-6 光子晶體微共振腔正面放大圖(乾蝕刻2分鐘).... 34
圖3-7 剖面圖..................................... 35
圖3-8 使用HF lift-off後的光子晶體................... 35
圖3-9完成之光子晶體微共振腔.......................36
圖3-10完成之光子晶體一層漸變式微共振腔.............36
圖3-11完成之光子晶體二層漸變式微共振腔.............37
圖3-12 定位示意圖................................. 40
圖3-13 金屬lift off完的圖片.......................... 41
圖3-14 使用RIE蝕刻過後的圖片...................... 42
圖3-15 使用ICPRIE蝕刻過後的DFB laser圖............ 42
圖3-16 使用ICPRIE蝕刻過後的放大圖之一............. 43
圖3-17 使用ICPRIE蝕刻過後的放大圖之二.............43

第四章 量測結果
圖4-1(a) 光膜分佈圖.................................45
圖4-1(b) PL光譜圖..................................45
圖4-2(a) 試片的CCD圖片............................46
圖4-2(b) 試片放大圖.................................46
圖4-3(a)pumping 2mw的光膜圖........................46
圖4-3(b)pumping 2mw的光譜圖........................46
圖4-4(a)pumping 1.5mw的光膜圖......................47
圖4-4(b)pumping 1.5mw的光譜圖......................47
圖4-5(a)pumping 1.0mw的光膜圖......................47
圖4-5(b)pumping 1.0mw的光譜圖......................47
圖4-6(a)pumping 0.5mw的光膜圖......................48
圖4-6(b)pumping 0.5mw的光譜圖......................48
圖4-7(b)pumping 0.2mw的光譜圖......................48
圖4-7(b)pumping 0.2mw的光譜圖......................48















表目錄

第二章 元件設計與模擬
表2-1 C044磊晶結構表............................7
表2-2 C100 磊晶結構表............................9
表2-3 C111磊晶結構表............................10

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