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博碩士論文 etd-0712102-064704 詳細資訊
Title page for etd-0712102-064704
論文名稱
Title
氣態碳原子在C(100)的附著性質與入射角之關係
The Dependence of the Sticking Property of a Carbon Gas-phase Atom on C(100) on the Incident Angle
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
46
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2002-06-29
繳交日期
Date of Submission
2002-07-12
關鍵字
Keywords
基本原理分子動力模擬方法、密度泛函理論、化學吸附能、局部密度近似法、附著
sticking, density functional theory, local-density approximation, the first-principles molecular-dynamics simulat, chemisorption energy
統計
Statistics
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The thesis/dissertation has been browsed 5689 times, has been downloaded 2429 times.
中文摘要
我們利用局部密度近似法 (local-density approximation) (LDA)的密度泛函理論 (density functional theory) (DFT)的基本原理分子動力模擬方法(the first-principles molecular-dynamics simulations method) (MD)計算碳原子附著在覆蓋氫之C(100)表面的性質。此研究主要在探討氣態碳原子以四個不同的角度( =0、π/8、π/6、π/4)入射時對於碳原子的軌跡及動能(Ek)轉移的影響。我們發現計算出的軌跡和動能的轉移,並不隨著入射角度 的不同而有明顯的變化,碳原子附著於表面的特性為何不因入射角而有明顯變化是由於化學吸附能相當大使得氣態碳原子的軌跡彎向表面,導致氣態碳原子被限制在一個小範圍內移動。
Abstract
We use the first-principles molecular-dynamics simulation method (MD), which is based on the density functional theory (DFT) with local-density approximation (LDA), to calculate the sticking property of a carbon atom on hydrogen covered C(100) surface. We focused on trajectories and kinetic energy transfer of the gas-phase C atom for four incident angles of =0, π/8, π/6 and π/4. We find that the calculated trajectories and the kinetic energy transfer of the gas-phase atom, Cn, overall are not very sensitive to the change of the incident angle. The insensitivity of the sticking property on the incident angle may be due to a large chemisorption energy, which bends the trajectory of Cn toward the surface, so that Cn is confined to move within a small range.
目次 Table of Contents
Contents


Ⅰ Introduction 1
Ⅱ Theory
2-1 Introduction 3
2-2 Density Functional Theory (DFT) 4
2-3 Local-Density Approximation (LDA) 10
2-4 ab-initio Molecular Dynamics Technique 11
Ⅲ Calculation Details 18
Ⅳ Results and Discussion 20
Ⅴ Summary 24
References 25
Tables 26
Figure Captions 26
參考文獻 References
Reference
[1]. J. E. Field, Properties of Diamond G. (Academic Press,London,1979),pp.647-648.
[2] D. K. Ferry, Phys. Rev. B 12, 2361(1975); L. Reggiani et al., Solid State Commun. 30, 333(1979).
[3] S. M. Sze, Physic of Semiconductor Devices (Wiley-Interscience, New York, ed. 2, 1981), p. 849.
[4] M. H. Tsai, Phys. Rev. B 63, 195406(2001).
[5] M. H. Tsai, W. –M. Hu, J. D. Dow, and O. F. Sankey, J. Vac. Sci. Technol. A 10, 2511(1992).
[6] Otto F. Sankey and David J. Niklewski, Phys. Rev. B 40, 3979(1989).
[7] P. Hohenberg and W. Kohn, Phys. Rev. Lett. 45, 566(1980).
[8] W. Kohn and L. J. Sham, Phys. Rev. 140, A1133(1965).
[9] M. H. Tsai, O. F. Sankey and J. D. Dow, Phys. Rev. B 46,10464(1992).
[10] M. H. Tsai and K. C. Hass, Phys. Rev. B 52,16420(1995).
[11] D. D. Johnson, Phys. Rev. B 38, 12807(1988).
[12] D. M. Ceperley and G. J. Alder, Phys. Rev. Lett. 45, 566(1980).
[13] D. R. Hamann, M. Schluter and C. Chiang, Phys. Rev. Lett. 43, 1494(1979).
[14] R. W. Jansen and O. F. Sankey, Phys. Rev. B 36,6520(1987).
[15] O. F. Sankey and D. J. Niklewski, Phys. Rev. B 40,3979(1989).
[16] E. P. Wigner and F. Seitz, Phys. Rev. 43, 804(1933); 46, 509(1943)
[17] H. Hellmann, Einfuhrung in die Quantumchemie (Franz Deutsche Leipzing,1937).
[18] R. P. Feynman, Phys. Rev. 56, 340(1939).
[19] B. M. Deb, Rev. Mod. Phys. 45, 22(1973).
[20] M. H. Tsai,J. C. Jiang, and S. H. Lin, Phys. Rev. B 60, 16 972(1999).
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