本論文是介紹溫度改變的霍爾效應測量，樣品是由Molecular Beam Epitaxy所成長的未摻雜GaN，主要是討論不同磁場下的遷移率(mobility)和載子濃度(carrier density)對溫度(4.2K~300K)，尤其是在300mT磁場下的討論。我們可以從實驗中利用垂直的電場和磁場來計算出遷移率和載子濃度並畫出遷移率對溫度、載子濃度對溫度的曲線。
我們改變樣品磊晶層上的N/Ga比來分析，主要是討論N/Ga為30和35的兩個樣品，而樣品的成長參數為
(1)氮化層成長時間 60 min，壓力 ，溫度為 。
(2)低溫GaN緩衝層成長時間 2 min，流量比 ，溫度 。
(3)高溫GaN 磊晶層成長時間3hr，溫度 ，主要改變的就是樣品的N/Ga比是30和35。

The temperature-dependent Hall measurement was performed on the undoped GaN thin films grown by molecular beam epitaxy. The mobility and electron density were obtained by the T-dependent ( 4.2K~300K ) Hall measurement at magnetic field 300mT. Since the Hall coefficient is the ratio of the perpendicular electric field to the product of current density and magnetic field, we calculate the mobility and electron density to get the temperature-dependent mobility and electron density curves.
We change the N/Ga ratio on the epilayer of two samples and analysis the mobility and carrier density against temperature. The sample growth procedure were (1)nitridation for 60 min, with ,at .(2) low temperature GaN buffer layer growth for 2 min, with ,at , and (3)high temperature GaN epilayer growth for 3hr, at . The N/Ga ratio of the samples are 30 and 35.

目錄
第一章 簡介………………………………………………4
第二章 理論部分……………………................................6
2-1 霍爾效應測量理論…………………………………8
2-2 霍爾測量…………………………………………...11
第三章 實驗步驟與儀器架設……………………………14
3-1 Sample 的處理步驟………………………………..14
3-2 儀器架設……………………………………………17
3-3 實驗步驟……………………………………………30
第四章 實驗結果與討論………………………………….41
4-1緩衝層的研究……………………………………….42
4-2 GaN磊晶層的研究………………………………….44
4-3 數據分析…………………………………………….45
4-4 結果討論…………………………………………….54
第五章 未來展望…………………………………………...58
Reference…………………………………………………….59

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