本論文將研究磁式濺鍍機於室溫中，在矽基板上鍍上二氧化矽(SiO2)薄膜，並且經過超臨界二氧化碳處理。薄膜電性方面，將探討不同製程條件下的特性，包含電容-電壓(C-V)和電流-電壓(I-V) 特性，並使用穿透式電子顯微鏡(TEM)量測薄膜厚度。我們提出了利用超臨界二氧化碳處理，改變薄膜的品質。在二氧化矽(SiO2)薄膜厚度為3.5nm時，最低的漏電流在電場1MV/cm的情況下得到1×10-8A/cm2，其磁滯電壓約0.01V。
這種利用磁式濺鍍法和超臨界二氧化碳處理之二氧化矽薄膜可應用在矽基太能電池上，在AM1.5(965W/m2)照光下得到功率轉換效率約是10.2%，經過快速熱退火於500℃，其量測最佳短路電流、開路電壓和填充因子分別為53mA、0.54V和0.53。

In this thesis, silicon oxide thin films fabricated on silicon substrates by reactive radio frequency (rf) magnetron sputtering and supercritical CO2 (SCCO2) treatment at room temperature were investigated. The electrical properties including I-V and C-V of the films prepared at different processing conditions were discussed. Using the Transmission Electron Microscope (TEM), the thickness of silicon oxide thin films were measured. The results suggested that the film quality can be significantly improved by the SCCO2 treatment after reactive sputtering. The leakage current of the films at an electrical field of 1 MV/cm is 1×10-8A/cm2 with a hysteresis voltage of 0.01V. The silicon oxide thin films can be used as a barrier layer for Al/SiO2/Si silicon solar cells.
The energy conversion efficiency of a single crystal silicon solae cell is 10.2% under AM1.5 (965W/m2) radiation. After rapid thermal annealing(RTA) at 500℃, the measured short-circuit current, open- circuit voltage, fill factor are 53mA, 0.54V and 0.53, respectively.

第一章 導論
1-1 簡介 ---------------------------------------------------- 01
1-2 太陽能原理 ---------------------------------------------- 01
1-3 太陽能電池之電性參數 ------------------------------------ 02
1-3-1 短路電流(short circuit current, ISC) ----------------------- 03
1-3-2 開路電壓(open circuit voltage, VOC) ---------------------- 03
1-3-3 填充因子(fill factor, FF) ------------------------------- 04
1-3-4 光電轉換效率(power conversionefficiency, η) ---- --------- 04
1-4 影響效率之關鍵 ----------------------------------------- 04
1-5 超臨界流體之應用 ---------------------------------------- 05
第二章 製程材料與儀器介紹 ---------------------------------------- 10
2-1 二氧化矽(SiO2) ------------------------------------------- 10
2-2 磁式濺鍍系統 -------------------------------------------- 11
2-3 熱蒸鍍系統 ---------------------------------------------- 14
2-4 量測儀器介 ---------------------------------------------- 14
2-4-1 四點探針(Four-Point-Probe) ----------------------------- 14
2-4-2 薄膜特性分析儀(N&K analyzer) ------------------------- 16
2-4-3 表面輪廓儀(Surface Profiler) ---------------------------- 17
2-4-4 半導體參數分析儀(Semiconductor Parameter Analyzer) ------ 18
2-4-5穿透式電子顯微鏡(Transmission Electron Microscope) ------- 19
第三章 實驗步驟 -------------------------------------------------- 22
3-1 材料成長條件 -------------------------------------------- 22
3-1-1 SiO2成長條件 ---------------------------------------- 22
3-1-2 金屬鉻Cr和鋁Al ------------------------------------- 24
3-2 元件製作流程 -------------------------------------------- 25
3-2-1 MIS結構製作流程 ------------------------------------ 25
3-2-2 Solar cell 結構製作流程 ------------------------------- 29
第四章 結果與討論 ------------------------------------------------ 31
4-1 SiO2材料分析 --------------------------------------------- 31
4-2 TEM量測結果分析 ---------------------------------------- 37
4-3 Solar cell特性分析 ----------------------------------------- 41
第五章 結論 ------------------------------------------------------ 44

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