本研究利用氮電漿輔助分子束磊晶(PAMBE)系統合成稀磁性半導體奈米柱材料於n型矽(111)基板上，藉由脈衝摻雜技術將錳元素摻雜至氮化鎵奈米柱。稀磁性半導體材料的發展以及合成過程中避免次要相的形成是一項重要的課題，因此，一維結構的磊晶方法在本研究中被採用，藉此提高晶體品質以及壓制錳相關次要相的形成。氮化鎵摻雜錳奈米柱利用掃描式電子顯微鏡(SEM)、穿透式電子顯微鏡(TEM)、能量散佈光譜儀(EDX)、高解析X射線繞射(HRXRD)系統、拉曼(Raman)光譜儀、超導量子干涉儀(SQUID)、及電流-電壓(I-V)特性分析等量測分析其材料特性。
氮化鎵摻雜錳奈米柱可藉由高解析X射線繞射(HRXRD)系統及穿透式電子顯微鏡(TEM)證明其晶體成長方向乃沿著hexagonal wurtzite晶體結構的c軸方向成長，並藉由能量散佈光譜儀(EDX)量測樣品的錳含量，而拉曼(Raman)散射光譜的實驗數據支持錳離子成功取代氮化鎵hexagonal wurtzite結構晶格中鎵的位置，並且經由高解析X射線繞射(HRXRD)系統及穿透式電子顯微鏡(TEM)繞射圖檢測證明奈米柱中無形成明顯的錳相關次要相，在此前提之下，超導量子干涉儀(SQUID)的M-H量測在高於室溫的條件下呈現一磁滯曲線，證明氮化鎵摻雜錳奈米柱具有室溫鐵磁性的可能性。

Plasma-assisted molecular beam epitaxy (PAMBE) synthesized diluted magnetic semiconductors nanorods on n-type Si (111) substrates are investigated in this report. Mn atoms are doped into GaN nanorods by using delta-doping methods. A challenging issue in the development of DMSs is the possibility of secondary phase induced ferromagnetism. Therefore, the method of one dimensional nanorod growth is adopted for improving the crystal quality and suppressing the formations of secondary phase. The Mn:GaN nanorods are characterized and analyzed by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectrometer (EDX), high-resolution X-ray diffraction system (HRXRD), Raman scattering system, superconducting quantum interference device (SQUID), and current-voltage (I-V) characterization.
The Mn:GaN nanorods grown along the c-axis of hexagonal wurtzite structure are confirmed by TEM and HRXRD. The concentration of Mn in GaN nanorods is determined by EDX, and the results of Raman scattering spectrum support that Mn atoms substitutes Ga sites of GaN hexagonal structure. There are no observable formations of secondary phase containing in Mn:GaN nanorods which are examined by HRXRD, and TEM diffraction patterns. The possibility of ferromagnetic behavior at room temperature in Mn:GaN nanorods is judged by magnetization-magnetic field (M-H) measurement of SQUID showing a hysteresis loop. More details will be discussed.

論文審定書 i
摘要 ii
圖目錄 vi
表目錄 xiv
緒論 1
1.1 介紹 1
1.2 文獻回顧 5
1.3 研究動機 16
第二章 實驗 24
2.1 分子束磊晶(MBE)成長技術[1][2] 24
2.2 分子束磊晶(MBE)系統成長氮化鎵脈衝摻雜錳奈米柱 29
第三章 分析技術 33
3.1 電子顯微術 (Electron Microscopy) 33
3.1.1 掃描式電子顯微術 (Scanning Electron Microscopy) 33
3.1.2 穿透式電子顯微術 (Transmission Electron Microscopy) 40
3.2 能量散佈X光光譜學 (Energy Dispersive X-ray Spectroscopy, EDX) 41
3.3 高解析X光繞射 (High-resolution X-ray Diffraction, HRXRD) 43
3.4 螢光光譜學 (Luminescence Spectroscopy) 46
3.4.1 光致螢光 (Photoluminescence, PL) 48
3.4.2 陰極螢光 (Cathodoluminescence, CL) 51
3.5 拉曼光譜學 (Raman Spectroscopy) 55
3.6 超導量子干涉儀 (Superconducting Quantum Interference Device Magnetometer, SQUID Magnetometer) 58
3.7 電流-電壓特性 (I-V Characterization) 60
第四章 改變夾層中GaN之磊晶時間 62
4.1 掃描式電子顯微鏡 (Scanning Electron Microscope) 影像 62
4.2 高解析X光繞射 (High-resolution X-ray Diffraction, HRXRD) 光譜 68
4.3 能量散佈X光光譜 (Energy Dispersive X-ray Spectrum, EDX) 71
4.4 穿透式電子顯微鏡 (Transmission Electron Microscope, TEM) 影像 84
4.5 陰極螢光(CL)以及光致螢光(PL)光譜 90
4.6 拉曼散射光譜 (Raman Scattering Spectrum) 98
4.7 超導量子干涉儀 (SQUID) 量測分析 101
第五章 改變夾層中Mn分子束通量 111
5.1 掃描式電子顯微鏡 (Scanning Electron Microscope, SEM) 影像 111
5.2 能量散佈X光光譜 (Energy Dispersive X-ray Spectrum, EDX) 116
5.3 高解析X光繞射 (High-resolution X-ray Diffraction, HRXRD) 光譜 124
5.4 拉曼散射光譜 (Raman Scattering Spectrum) 126
5.5 超導量子干涉儀 (SQUID) 量測分析 129
參考資料 132
第六章 結論 134
附錄 (M0607系列樣品TEM影像) 135

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第三章 分析技術
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第四章 改變夾層中GaN之磊晶時間
第五章 改變夾層中Mn分子束通量
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