本論文探討在奈米結構P-N異質接面兩端加上絕緣層的新型元件應用於紫外光感測器之研製。利用射頻濺鍍系統在矽基板上依序沉積氧化銅(CuO)與氧化鋅(ZnO)薄膜形成P-N異質接面。氧化鋅薄膜作為種子層，在其上方以水熱法成長氧化鋅奈米柱來改善元件對紫外光的感測能力。二氧化鉿(HfO2)薄膜則是沉積在P-N接面的兩側當作絕緣層來增進元件的表現。再以熱蒸鍍法沉積金屬鋁(Al)在二氧化鉿薄膜兩端形成電極，完成Al/HfO2/CuO/ZnO/HfO2/Al元件結構。氧化鋅奈米柱結構與水熱反應時間及反應物莫爾濃度等參數息息相關，透過SEM觀察薄膜與奈米結構的形貌並分析其對元件表現之影響。
實驗結果顯示，調配莫耳濃度0.1M及水熱成長5小時的氧化鋅奈米柱結構所製作而成的元件，經過退火步驟後對紫外光源照射的綜合表現為最佳。靈敏度、上升時間與回復時間分別為158.7%、3秒與4秒。由於奈米柱結構可以幫助紫外光被氧化鋅再次吸收，增加被元件吸收的機會。退火更改善了氧化鋅材料中的缺陷。雙絕緣層能夠抑制元件暗電流，使得靈敏度大幅上升。對於紫外光感測器應用於紫外線指數偵測與航太工業相當具有發展性。

In this thesis, the nanostructed P-N heterojunction with double insulating layers applied to ultraviolet (UV) detecting applications has been well studied. ZnO and CuO films were deposited on silicon substrate sequentially to form the heterojunction by using the RF sputtering system. ZnO film is also a seed layer for growing the nanorod structure by hydrothermal method. ZnO nanorods can improve the device performance to UV. HfO2 thin films were deposited on both sides of P-N heterojunction as insulating layers to enhance the sensitivity. Aluminum electrodes were deposited on the insulating layers to form the Al/HfO2/CuO/ZnO/HfO2/Al device structure. The morphology of the ZnO nanorods is related to the hydrothermal reaction time and the reagent concentrations. All these surface structures are observed by scanning electron microscope (SEM) to analyze the effects on device performance.
The results show that the device under 0.1M hydrothermal solution for growing 5 hours has the best sensitivity to UV radiation after an annealing process. The sensitivity, rise time and recovery time are 158.7%, 3 s and 4 s, respectively. Nanorod structure can help UV has more chances be absorbed by the ZnO. Annealing process reduces the defects in the material. Double insulating layers restrain the dark current and enhance the sensitivity. The research has a great potential for applying into ultraviolet index (UVI) detection and aerospace industry.

論文審訂書 i
誌謝 ii
摘要 iii
ABSTRACT iv
目錄 vi
圖目錄 viii
表目錄 x
第一章 序論 1
1-1 前言 1
1-2 紫外光感測器 2
1-3 元件結構所選用的材料介紹 2
1-4 論文架構 4
第二章 理論基礎 5
2-1 電漿 5
2-1-1 電漿的產生與碰撞 5
2-2 濺鍍原理 6
2-2-1 濺鍍的薄膜沉積現象 6
2-3 氧化鋅水熱法成長原理 7
2-4 蒸鍍原理 8
2-5 半導體照光產生載子與復合現象 9
2-6 氧化鋅照光產生載子與復合原理 10
2-7 元件結構原理 10
2-8 退火原理 12
2-9 薄膜與奈米結構形貌分析儀器 12
第三章 實驗步驟 13
3-1 原料選用 13
3-2 高真空射頻濺鍍系統 13
3-3 蒸鍍系統 14
3-4 爐管退火系統 14
3-5 元件製作流程 15
3-5-1 矽基板清洗 15
3-5-2 濺鍍沉積薄膜層 16
3-5-3 水熱法成長氧化鋅奈米柱 16
3-5-4 蒸鍍系統沉積鋁電極 16
3-6 KEITHLEY 2400半導體參數分析儀與照光裝置 17
第四章 結果與討論 18
4-1 不同莫爾濃度比調配水熱法參數成長情況 18
4-2 不同水熱法成長時間與莫爾濃度之的氧化鋅奈米結構 18
4-3 影響紫外光感測器之靈敏度與響應時間因素 19
4-4 不同水熱法莫爾濃度之元件電性量測與紫外光感測器表現 20
　4-5 不同水熱法成長時間之元件電性量測與紫外光感測器表現 21
4-6 綜合討論 23
第五章 未來展望 24
參考文獻 25

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