隨著照明設備不斷的演進與改良，為了追求高效率、低功耗與壽命長等特點，固態照明便成為新一代照明設備的發展重點。本研究運用有機發光二極體(Organic light-emitting diode, OLED)元件，以藍光OLED做為激發光源，再搭配上三種不同的色轉換層技術：螢光玻璃基板、螢光壓克力軟性基板與量子點色轉換層，混光後實現白光OLED元件。
本研究利用螢光玻璃基板做為色轉換層元件分別製作三種不同螢光粉濃度搭配的白光元件，PS-1元件為摻雜3 wt%黃色螢光材料與3 wt%紅色螢光材料之螢光玻璃基板，元件色溫約落在7468 K，演色性67，最大外部量子效率為6.29 %，最大亮度8381.8 cd⁄m^2 (@8.6 V)，最大電流效率與功率效率分別為 15.14 cd/A與6.78 lm/W。PS-2元件部分為摻雜3 wt%黃色螢光材料與8 wt%紅色螢光材料之螢光玻璃基板，元件平均色溫約落在3890 K，演色性可達88，最大外部量子效率為11.7 %，最大亮度16304.7 cd⁄m^2 (@7.8 V)，最大電流效率與功率效率分別為 23.54 cd/A與24.37 lm/W。暖白光元件部分為厚度兩倍摻雜1.5 wt%黃色螢光材料與6 wt%紅色螢光材料之螢光玻璃基板，元件色溫約落在4302 K，演色性為67，最大外部量子效率為6.62 %，最大亮度4879.5 cd⁄m^2 (@8.6 V)，最大電流效率與功率效率分別為 9.43 cd/A與6.7 lm/W。
在螢光壓克力軟性基板製作出兩種白光元件，冷白光元件為摻雜3 wt%黃色螢光材料與3 wt%紅色螢光材料之螢光壓克力軟板，元件色溫約落在19722 K，演色性可達75，最大外部量子效率為10.79 %，最大亮度7278.8 cd⁄m^2 (@10.4 V)，最大電流效率與與功率效率分別為 21.08 cd/A與10.79 lm/W。正白光元件則是摻雜3 wt%黃色螢光材料與8 wt%紅色螢光材料之螢光壓克力軟性基板，元件平均色溫約落在3654 K，演色性可達68，最大外部量子效率為10.4 %，最大亮度4491.3 cd⁄m^2 (@13 V)，最大電流效率與功率效率分別為 17.35 cd/A與8.35 lm/W。
量子點色轉換層部分QDS-1利用厚度0.26 mm之AgInS2 (AIS)量子點色轉換層基板，元件色溫約落在7527 K，演色性可達78，最大外部量子效率為7.98 %，最大亮度7302.8 cd⁄m^2 (@9.4 V)，最大電流效率與功率效率分別為 12 cd/A與10.77 lm/W。為了提高色轉換層之演色性利用厚度0.26 mm之AIS量子點以及厚度0.13 mm之碳量子點色轉換層，元件色溫約落在4817 K，演色性可達81，最大外部量子效率為7.84 %，最大亮度6625.7 cd⁄m^2 (@8.2 V)，最大電流效率與功率效率分別為 10.01 cd/A與9.78 lm/W。

To seek high efficiency, low power consumption and long lifetime for the improvement of lighting equipment, solid-state lightings have become popular in new generation lightings. In this study, white light-emitting diodes (WOLEDs) were realized by blue organic light-emitting diodes (OLEDs) (act as the excitation sources) and color conversion layers: glass phosphor substrates, flexible phosphor substrates, and quantum dot layers.
YAG:Ce and CASN:Eu were used as the phosphors in both glass phosphor substrates and flexible substrates. PS-1 device, with the glass substrate doped with YAG:Ce and CASN:Eu in a ratio of 3 wt%:3 wt% showed a CCT and CRI of 7468 K and 67, respectively. PS-2 device, with the glass substrate doped with YAG:Ce and CASN:Eu in a ratio of 3 wt%:8 wt% showed a CCT and CRI of 3890 K and 88, respectively. PS-3 device, with the glass substrate doped with YAG:Ce and CASN:Eu in a ratio of 1.5 wt%:6 wt% and twice thickness showed a CCT and CRI of 4302 K and 67, respectively. FPS-1 device, with the flexible substrate doped with YAG:Ce and CASN:Eu in a ratio of 3 wt%:3 wt% showed a CCT and CRI of 19722 K and 75, respectively. FPS-2 device, with the flexible substrate doped with YAG:Ce and CASN:Eu in a ratio of 3 wt%:8 wt% showed a CCT and CRI of 3654 K and 68, respectively.
Carbon quantum dots and AgInS2 (AIS) quantum dot were used as the color conversion elements in quantum dot layers. QDS-1 device, with a 0.26-mm-thick AIS quantum dot film as the color conversion layer, showed CCT and CRI of 7527 K and 78, respectively. To improve the color rendering, QDS-2 device, with a 0.26-mm-thick AgInS2 (AIS) quantum dot film atop a 0.13-mm-thick carbon quantum dot film as the color conversion layer, showed a CCT and CRI of 4817 K and 81, respectively.

中文審訂書 i
英文審訂書 ii
致謝 iii
摘要 iv
Abstract vi
目錄 viii
圖目錄 x
第一章 緒論 1
1-1 前言 1
1-2 研究動機與目的 3
1-3 各章提要 5
第二章 基礎理論 6
2-1 OLED發光原理 6
2-1-1螢光與磷光放光原理 6
2-1-2 主客體放光系統 9
2-1-3基本OLED結構與電激放光原理 11
2-2 白光OLED結構 12
2-2-1 多重發光層 12
2-2-2 多摻雜發光層 13
2-2-3 色轉換層 14
2-3 色彩學原理 16
2-3-1色度座標(CIE 1931色彩空間) 16
2-3-2色溫(Color temperature) 17
2-3-3演色性指數(Color rendering index, CRI) 18
第三章 實驗裝置與元件製作 19
3-1 實驗材料 19
3-1-1 螢光玻璃原料 19
3-1-2 螢光壓克力軟板原料 22
3-1-3 量子點原料 23
3-1-4 有機電激發光材料 24
3-2 製作步驟 26
3-2-1 螢光玻璃元件製作步驟 26
3-2-2 螢光壓克力軟板元件製作步驟 29
3-2-3 量子點色轉換層元件製作步驟 31
3-3 元件製程與量測 32
3-3-1 基板清潔及表面處理 32
3-3-2 元件蒸鍍 33
3-3-3 元件量測 33
第四章 結果與討論 35
4-1 色轉換層基板光學特性 35
4-1-1 螢光玻璃 35
4-1-2 螢光壓克力軟性基板 41
4-1-3 量子點色轉換層光學特性 45
4-2 白光OLED元件特性 47
4-2-1 藍光OLED激發光源元件特性 47
4-2-2 螢光玻璃白光元件特性 50
4-2-3 螢光壓克力軟板白光元件特性 60
4-2-4 量子點色轉換層白光元件特性 69
結論 76
參考資料 78

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