本論文結合奈米科技與微機電技術以研發創新型彎曲平板波微感測晶片，並探討其於過敏性疾病檢測上的應用，主要的診斷標的是病患血清中免疫球蛋白E(IgE)之濃度值。在傳統的過敏檢測方法上，是利用血液試藥檢驗法，此法不但耗時而且花費昂貴，然而準確度約只有60%~70%而已；本論文將利用壓電式聲波微感測元件以取代傳統的試藥檢測方法以提高其準確度。在比較過四種主要的聲波感測器QCM, SAW, APM及FPW之優缺點後，本文決定採用彎曲平板波(FPW)的方式作為元件的感測基礎，因為FPW感測器將具有較高的準確度、較高的靈敏度、較低的操作頻率、較短的檢測時間以及較低的製造成本等優點。
本論文將以反應式射頻磁控濺鍍法成長(002)軸向的氧化鋅薄膜，並且透過調變不同的製程參數：如改變基板溫度、氬氣與氧氣的比例以及濺鍍功率等，探討參數變化對壓電薄膜特性的影響，以建立高優質C軸選向氧化鋅壓電薄膜之沉積技術，同時經材料分析方法如XRD、SEM等取得最佳化參數以建立FPW元件模型，進而結合單面異向性蝕刻技術以完成整個矽基FPW感測元件製作，最後由量測結果顯示本文所開發之彎曲平板波微感測器之中心頻率約50∼60MHz。

By integrating Nanotechnology and MEMS technology, this thesis aims to research a flexural-plate wave (FPW) sensor for testing Immunoglobulin E (IgE) concentration in blood serum, a significant index for the diagnosis of allergies. The traditional methods of blood assay are time-consuming and costly, and its average accuracy of only 60-70 percent. After compare the major four kinds of acoustic sensor, the FPW sensor demonstrates a high accuracy, high sensitivity, low operation frequency, low diagnosis time and low cost.
This thesis utilizes a reactive RF sputter system to deposite the piezoelectric ZnO thin film. To obtain the high C-axis orientation (002) characteristic of ZnO membrane, many parameters such as substrate temperature, Ar/O2 ratio and RF power have been adjusted and optimized during the sputtering process. The effects of varied parameters will be investigated and analysis by using SEM or XRD facilities.
In this study, we combined the high figure-of-merits ZnO deposition techniques and single-side anisotropic silicon etch process to implement the process integration of FPW device. Finally, this research has demonstrated a 50-60MHz center frequency can be extracted from such silicon-based FPW microsensor.

目錄
中文摘要………………………………………………………………I
Abstract…………………………………………………………………II
致謝…………………………………………………………………III
目錄…………………………………………………………………IV
圖目錄………………………………………………………………VI
表目錄…………………………………………………………X
第一章 緒論……………………………………………………………1
1-1 前言……………………………………………………………1
1-2 研究動機與論文架構…………………………………………3
第二章 彎曲平板波之原理與分析……………………………………4
2-1 聲波元件簡介……………………………………………… 4
2-1-1剪應力震盪器……………………………………………4
2-1-2表面聲波感測器………………………………………………5
2-1-3剪力水平板波感測器…………………………………………7
2-1-4彎曲平板波感測器……………………………………………8
2-2 壓電效應………………………………………………………20
2-3 壓電薄膜選擇與分析…………………………………………22
2-4 氧化鋅壓電薄膜晶格結構與特性之簡介……………………23
2-5 氧化鋅壓電薄膜沉積與分析…………………………………25
2-5-1氧化鋅薄膜沉積方式選擇…………………………………25
2-5-2 X光繞射分析………………………………………………25
2-5-3掃瞄式電子顯微鏡分析……………………………………28
2-6 反應性射頻磁控濺鍍原理簡介………………………………29
第三章 元件設計與實驗方法…………………………………………32
3-1 彎曲平板波元件模擬與設計…………………………………32
3-1-1彎曲平板波元件模擬………………………………………32
3-1-2彎曲平板波元件佈局設計…………………………………35
3-2 彎曲平板波元件製作…………………………………………41
3-2-1彎曲平板波元件製作流程…………………………………41
3-2-2彎曲平板波元件製作方法…………………………………44
3-3 設備規格與製程參數…………………………………………56
第四章 實驗結果與討論………………………………………………63
4-1 反應性射頻磁控濺鍍氧化鋅薄膜之材料特性分析…………63
4-2 彎曲平板波元件之量測結果與分析…………………………71
第五章 結論及未來展望………………………………………………78
參考文獻………………………………………………………………80

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