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URN	etd-0713106-173707
Author	Ming-chan Li
Author's Email Address	m933010042@student.nsysu.edu.tw
Statistics	This thesis had been viewed 4221 times. Download 37 times.
Department	Electrical Engineering
Year	2005
Semester	2
Degree	Master
Type of Document
Language	zh-TW.Big5 Chinese
Title	Electrochemical Deposition of Bismuth Telluride and Antimony Telluride Thin Films for Micro TE-cooler Applications
Date of Defense	2006-07-07
Page Count	91
Keyword	electroplating Bismuth Telluride Micro TE-cooler Antimony Telluride
Abstract	Abstract This paper presents an integrated batch-produced (Bi, Sb)2Te3 micro thermoelectric cooler(μ-TEC) fabricated by electrochemical MEMS technology. To optimize the thermal conductivity of (Bi, Sb)2Te3 thin layers, a cathode with tunable rotary speed has been designed in the electroplating system to well control the thin film deposition rate and uniformity.The column-type micro thermoelectric thin films fabricated using electrochemical-deposited and patterned using photolithography processes. The thermoelectric thin films made of N-type Bi2Te3 and P-type Sb2Te3 with an average thickness of 5μm, are connected using Cr/Au layers at the hot junctions and cold junctions. The measured Seebeck coefficient and electrical resistivity of the thermoelectric thin films,are -52μV/K and 2.52×10-5Ωm(N-type, power factor of 0.11mW/K2m),and 71μV/K and 1.91×10-5Ωm( P-type, power factor of 0.26mW/K2m) after annealing at 250℃.Under the circumstances that voltage of 2-5 volts is driven, the upper and lower levels electrode shows tentatively that there is 0.7℃of difference in temperature.
Advisory Committee	Ruey-Shing Huang - chair Shiang-Hwua Yu - co-chair Lieh-hsi Lo - co-chair Jin-Chern Chiou - co-chair I-Yu Huang - advisor
Files	etd-0713106-173707.pdf indicate in-campus access in a year and off_campus not accessible
Date of Submission	2006-07-13

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