近年來光通訊產業需求急速發展，在介電質膜層製鍍上，膜層品質相當重要。若要製鍍高穿透、高反射和低損耗的膜層，目前以離子束濺鍍可達到最低的損耗，但產品輸出量少，不適合量產。此外本實驗室需要在晶纖側邊鍍上CaO，MgO及Cr2O3等不同的材料，因此採用電子槍蒸鍍系統(E-beam)。以E-beam製鍍過程需加熱且膜層結構鬆散，很難達到高損害閥值及低損耗，因此另外加入離子源，以離子輔助蒸鍍法(IAD)可使膜層變的更緻密，並降低損耗，這將是本研究討論的重點。
本論文將介紹在E-beam製程中加入IAD製鍍二氧化鈦(TiO2)及二氧化矽(SiO2)之光學薄膜，並探討離子輔助法對於光學特性之影響。我們使用光譜儀量測光譜，以Macleod程式計算出薄膜折射率和消光係數，並比較不同製鍍參數下對薄膜特性之影響。再利用ESCA (electron spectroscopy for chemical analyzer)計算出膜層中Ti、Si和O所佔的比例，並觀察SEM(scanning electron microscope)所拍攝的膜層圖檢測膜層品質以期達到低損耗和高損害閥值膜層，並尋找IAD適當的製鍍條件與參數。目前TiO2在波長500 nm，其折射率為2.51，吸收係數小於2x10-4，而SiO2折射率為1.466，吸收係數小於1x10-4，並成功製程出在1233 nm，反射率大於99.83%之高反射膜層。

Due to the fast expansion and development in the optical communication industry, the demand for the film quality has correspondingly increased. Ion beam sputter deposition (IBSD) achieves the lowest loss, but low throughput. In our Lab., E-beam system was used for CaO, MgO and Cr2O3 evaporation on the circumference of the Cr:YAG crystal fiber. Although the substrate was heated to around 275oC, the thin film didn’t achieve low loss and high laser-induced damage threshold film. Adding ion-beam assisted deposition (IAD) system to enhance the thin film energy and packing density is the main theme of this thesis.
The thesis mainly focuses on the characteristics of TiO2 and SiO2 thin film based on E-beam with IAD system. Spectrometer analyzer and Macleod software were used to calculate the refractive index and extinction coefficient. ESCA (electron spectroscopy for chemical analyzer) was adopt to measure the thin film composition of Ti, Si, O. SEM (scanning electron microscope) was used to observe the thin film quality. Low loss and high laser-induced damage threshold thin film are the goal of the present research. With optimized parameters, the refractive index of TiO2 film was achieved to be 2.51 at 500 nm, and the extinction coefficient was less than 2x10-4. The refractive index of SiO2 film can be achieved to be 1.466 at 500 nm, and the extinction coefficient was less than 1x10-4. An HR (R>99.83%) coating at 1233 nm was successfully demonstrated by the IAD deposition system.

中文摘要 i
英文摘要 ii
目錄 iii
圖目錄 v
表目錄 viii
第一章 緒論 1
第二章 基本原理 3
2.1 光學薄膜特性與膜矩陣 3
2.2 光學常數分析-包絡法 8
2.2.1 包絡法理論 10
2.2.2 膜層折射率的計算方法 11
2.2.3 膜層厚度的計算方法 12
2.2.4 膜層消光係數的計算方法 12
2.3 膜成長理論 15
2.4 光學薄膜電場分佈 17
第三章 電子槍蒸鍍系統架構及量測儀器 19
3.1 電子槍蒸鍍系統 19
3.1.1 真空系統 19
3.1.2 電子槍系統 22
3.1.3 離子輔助系統 24
3.1.4 監控系統 28
3.1.5 視窗程式 32
3.2 膜層檢測 46
3.2.1 光譜量測儀 46
3.2.2 X光光電子能譜儀 47
3.2.3 掃描式電子顯微鏡 49
3.2.4 原子力顯微鏡 50
第四章 薄膜材料特性分析 52
4.1 TiO2薄膜特性分析 52
4.1.1 折射率與消光係數 52
4.1.2 化學成分之分析 55
4.1.3 微觀結構之分析 57
4.1.4 表面粗糙度之量測 59
4.2 SiO2薄膜特性分析 61
4.2.1 折射率與消光係數 61
4.2.2 化學成分之分析 64
4.2.3 微觀結構之分析 66
4.2.4 表面粗糙度之量測 68
第五章 薄膜應用與討論 70
5.1 Yb:YAG表面鍍膜分析與討論 70
5.1.1 薄膜需求 71
5.1.2 Yb:YAG晶體表面鍍膜 73
5.2 Cr4+:YAG晶體光纖端面鍍膜分析與討論 75
5.2.1 雷射共振腔 75
5.2.2 Cr4+:YAG晶體光纖端面鍍膜 77
5.2.3 Cr4+:YAG晶體光纖製鍍樣品 82
第六章 結論 84

參考文獻 85
中英對照表 87

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