本研究以兩種方式進行基板氮化前處理，探討前處理對後續以分子束磊晶成長氧化鋅的影響，氮化處理分別為在(一)：在水平式管型爐內通入氨氣，在高溫(800~1050 oC)下持溫3小時氮化鋁酸鋰(100)(γ-LiAlO2, LAO)基板，與在650 oC~700 oC 持溫10~20分鐘氮化鎵酸鋰(100)(β-LiGaO2, LGO)基板；(二)：在分子束磊晶系統內以氮氣電漿源轟擊基板，電漿氮化溫度為200~600 oC，氮化時間為1~2小時，氮化後的基板分別以X光光電子能譜儀(XPS)與原子力顯微鏡(AFM)進行表面分析。分子束磊晶法成長氧化鋅的參數固定不變，成長溫度為700 oC，成長後的氧化鋅以高解析X光繞射儀(HRXRD)、光激發光譜儀(PL)和穿透式電子顯微鏡(TEM)分析磊晶的結晶、發光和缺陷等特性。
在未處理的LAO(100)基板上成長出沿[0001]方向的C平面和[10-10]方向的M平面氧化鋅磊晶，未處理的LGO(100)基板則成長M平面氧化鋅。根據XPS與TEM分析結果判斷，以氨氣氮化的LAO基板表面形成一層約5-10 nm的(0001)平面氮化鋁。因此後續的氧化鋅也是沿[0001]方向成長的C平面磊晶，其rocking curve的半高寬和PL的近能帶邊際(NBE)激發光強度，均隨著氮化溫度的增加而下降。
電漿氮化的LAO基板，由表面分析結果顯示並未生成氮化鋁，而是形成約2-3 nm的LiAl5O8，因此在200 oC/1小時與400 oC/2小時氮化後，皆磊晶成長為長條狀的M平面(10-10)氧化鋅磊晶，其中400 oC/2小時的氮化條件所成長的氧化鋅磊晶品質最佳，M平面的rocking curve半高寬由未氮化的1.23o降低至0.56o，PL光譜出現最強的NBE發光峰。
氨氣氮化的LGO基板表面形成氮化鎵，與未氮化LGO基板相同，皆成長出M平面氧化鋅磊晶，其PL的NBE發光峰強度增強，但是rocking curve的半高寬卻比未氮化基板上成長氧化鋅大，且氮化溫度越高、時間越久，磊晶品質相對降低。

In this work, the influence of substrate nitridation on the subsequent growth of ZnO epilayers by plasma assisted molecular beam epitaxy (MBE) was studied. Two nitridation method were used. The first method is to nitride LiAlO2 (100) substrate at 800-1050 oC and LiGaO2 (100) substrate at 650-700 oC in NH3 in a horizontal tube furnace for 10 min to 3 hours. The second method is to irradiate (bombard) LAO substrate with nitrogen plasma at 200-600 oC for 1-2 h in the MBE system. The substrate surface after nitridation was analyzed by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Then the ZnO epilayers were grown by MBE under the same condition at 700 oC. The structure, defects and photoluminescence characteristics of the ZnO epilayers grown on nitridated substrates were investigated by high resolution X-ray diffraction (HRXRD), transmission electron microscopy (TEM) and photoluminescence (PL), in comparison with those grown on the substrates without nitridation.
Both c-plane and m-plane ZnO were grown on the untreated LiAlO2 (100) substrate, while only m-plane ZnO was deposited on the untreated LiGaO2 (100) substrate.A layer of 5-10 nm (0001) AlN was grown on the surface of LiAlO2 after nitridation by NH3. Only c-plane ZnO was grown on the nitridated substrate, and the full width at half maximum (FWHM) of (0002) rocking curve was lower than that grown on the untreated one. Moreover, the FWHM value as well as the near band edge (NBE) emission in the PL spectra decreased with the increase of nitridation temperature.
A layer of LiAl5O8 in thickness of 2-3 nm was formed on the surface of the LiAlO2 substrate after nitridation by nitrogen plasma. The ZnO epilayers grown on the substrates nitridated at 200 and 400 oC were merely (10-10) m-plane. The ZnO sample grown on the 400 oC-nitridated substrate exhibited the typical feature of long stripes on the surface, with the lowest FWHM value of 0.56o, and the strongest PL intensity at room temperature.
GaN was formed on the surface of the LiGaO2 substrate after nitridation by NH3. The growth orientation of the ZnO epilayers on nitridated substrates were the same as that without nitridation. The crystal quality of grown epilayers deteriorated owing to the nitridation process, and became even worse as the nitridation temperature increased. However, the PL intensity was enhanced greatly by one order of magnitude.

總目錄
論文審定書 i
誌謝 ii
中文摘要 iii
英文摘要 v
總目錄 vii
表目錄 x
圖目錄 xi
第一章 前言 1
第二章 文獻回顧與理論基礎 3
2.1分子束磊晶法原理 3
2.2分子束磊晶系統 4
2.2.1 泵浦 4
2.2.2熱絲極離子真空計 5
2.2.3射頻電漿源 5
2.2.4分析儀器 5
2.3 磊晶成長機制 6
2.3.1表面自由能與成長模式 7
2.3.2 晶格失配與成長模式 8
2.4 基板 9
2.4.1 藍寶石基板 9
2.4.2 鋁酸鋰基板 9
2.4.3 鎵酸鋰基板 10
2.5 基板氮化 11
2.5.1 基板氮化原理與方法 11
2.5.2 藍寶石基板氮化 12
2.5.3 鋁酸鋰基板氮化 13
2.5.4 鎵酸鋰基板氮化 15
2.5.5 基板與氮化層和氧化鋅的晶格失配 16
2.5.6 氮化處理對磊晶的影響 16
2.6 分子束磊晶成長氧化鋅磊晶 17
2.6.1 極性與非極性氧化鋅 17
2.6.2 氧化鋅磊晶性質 18
第三章 實驗方法 19
3.1 磊晶基板氮化處理 19
3.2 氧化鋅磊晶成長 20
3.3 實驗分析 21
第四章 實驗結果 23
4.1 基板表面分析 23
4.2LAO(100)與LGO(100)成長氧化鋅磊晶分析 25
4.3氮化基板成長氧化鋅磊晶分析 26
4.3.1掃描式電子顯微鏡分析 26
4.3.2高解析X光繞射分析 27
4.3.3光致螢光光譜分析 29
4.3.4穿透式電子顯微鏡分析 30
第五章 討論 34
5.1基板氮化機制 34
5.2氨氣氮化LAO(100)對磊晶的影響 35
5.3電漿氮化LAO(100)對磊晶的影響 36
5.4氨氣氮化LGO(100)對磊晶的影響 36
第六章 結論 38
第七章 參考文獻 39

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