全反射衰減技術，常被用來研究介電質的介電係數。本實驗是以Krestchmann結構來激發液晶與銀薄膜介面上的表面電漿波，利用滿足表面電漿波的激發條件，得到介面上液晶分子的有效折射率，進而求出液晶分子於銀薄膜的表面傾角。本文也探討液晶傾角隨外加電壓改變的變化。

The attenuated total reflection (ATR) due to excitation of surface plasmon is usually applied to study the dielectric coefficient. In this study the surface plasmon has been excited on the interface between the liquid crystal and silver in Krestchmann configuration. We can obtain the effective reflection index and the tilt-angle of liquid crystal anchored on the interface with the excitation condition of surface plasmon. We also discuss the variation of the tilt-angle of liquid crystal with the various applied bias.

目錄--------------------------------------------------------------------------------Ⅰ
圖表目錄--------------------------------------------------------------------------Ⅲ
中文摘要--------------------------------------------------------------------------Ⅴ
Abstract---------------------------------------------------------------------------Ⅵ

第一章 導論----------------------------------------------------------------1
1-1 前言-----------------------------------------------------------------1
1-2 液晶簡介-----------------------------------------------------------2
1-3 表面電漿波簡介--------------------------------------------------7
第二章 理論----------------------------------------------------------------9
2-1 液晶物理-----------------------------------------------------------9
2-2 金屬薄膜的表面電漿波色散關係---------------------------19
2-3 ATR耦合---------------------------------------------------------22
2-4 Ag-液晶介面的表面電漿波----------------------------------24
第三章 實驗方法與步驟
3-1 樣品製備---------------------------------------------------------26
3-2 實驗裝置---------------------------------------------------------30
第四章 實驗結果與分析-------------------------------------------32
4-1 Ag-air介面量測--------------------------------------------------32
4-2 Ag-液晶介面量測-----------------------------------------------39
第五章 討論--------------------------------------------------------------------43
References------------------------------------------------------------------------44
附錄一-----------------------------------------------------------------------------45

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