我們利用upconversion動態螢光光譜量測技術，以150fs的解析度分析Volmer-Weber(VW)和Stranski-Krastanow(SK)兩種不同生長模式的第二型能帶排列(type II band alignment)ZnTe/ZnSe量子點(quantum dots)。實驗結果顯示SK模式螢光的rise time 和decay time皆較VW模式來的長，應該是SK模式存在二维結構wetting layer提供受熱激發的載子在量子點間遷移及擴散的管道導致螢光存在時間的延長，而在VW模式則發現其載子釋放能量方式為Auger process，並且在兩種不同模式皆有聲子瓶頸(phonon bottleneck)現象。另外以532nm Nd-TAG雷射入射的螢光光譜，及對不同波長隨溫度的動態螢光光譜(Time resolved photoluminescence ,TRPL)量測皆顯示wetting layer能階的存在，其在載子釋放能量及結合過程扮演了十分重要的角色。

The carrier capture and relaxation of Type II ZnTe/ZnSe
quantum dots(QDs) were investigated with ultrafast photoluminescence upconversion. We found that carrier relaxation of QDs under Volmer-Weber(VW) growth mode exhibits faster decay and rise than that of QDs under Stranski-Krastanow(SK) growth mode due to the wetting layer in SK growth mode provides as a pathway for carriers to diffuse and migrate from large(small) to small (larger) QDs. The wetting layer level was found by analyze the decay time of PL with different wavelength and temperature. The PL of VW mode and SK mode by using 532nm Nd-YAG laser also prove the existence of wetting layer. We interpret our results of VW mode in terms of Auger process with large carrier density.

中文摘要…………………………………………...…...........I
英文摘要…………………………...………………………..…….II
第一章 導論…………………………...…………………………..1
第二章 樣品說明……………………………...…………………..6
第三章 實驗簡介及架構
3-1 實驗簡介………………….………...……………..14
3-2 實驗架構…………………………………...……….16
第四章 載子在量子點內釋放能量及結合機制
4-1 載子在量子點內釋放能量機制….…………...………21
4-2 載子在量子點內結合機制….…………………...……25
第五章 實驗結果與討論……………………….………………28
第六章 結論………………………………………...……………44
參考文獻……………………………………………………...……..45

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