射頻濺鍍成長的氧化鋅薄膜，其光電性值受到濺鍍參數影響很大，因此本文藉改變不同濺鍍參數，尋找最佳化的參數條件，長出高品質的氧化鋅薄膜。在改變射頻功率部分，越高的射頻功\\率薄膜沉積速率越快，過快的成長速率會使薄膜表面粗糙度大幅提升，在射頻功率50W 時能得到最低的表面粗糙度1.811nm。光學量測部分，在可見光部分有80%以上的穿透度，且有顯著的紫外吸收，PL 光譜上波長385nm 有顯著的UV emission 波峰。電性量測方面，剛成長出的氧化鋅薄膜電
阻率較為偏高，經過回火處理後，在700℃時能得到最低電阻2.764×10-2(Ω-cm)。在成長壓力參數部分，固定射頻功率RF50W 氬氣流量10sccm，5mTorr 成長的薄膜其光學特性及結晶品質上表現較差，過低成長壓力不利於氧化鋅薄膜成長。
15mTorr 成長的薄膜，經過700℃回火處理後能有最低電阻值1.826×10-2(Ω-cm)。而成長壓力25mTorr 的薄膜，回火700℃處理後有最強PL 光譜強圖。薄膜條件最佳化後，寄望利用金屬奈米粒子表面電漿效應，來達到增強薄膜的光學性質效果。在氧化鋅薄膜上分別鍍上一層5nm、10nm 金膜，回火700℃處理後，得到直徑50nm 及200-250nm 金奈米粒子。光學量測部分，金奈米粒子確實有增強PL 光譜強度及光學穿透度效果，其效應受到金顆粒大小及摻雜位置影響。電性量測方面，n-ZnO/p-Si 顯示出良好的整流效果。電流導通機制為空間電荷限制電流、穿隧電流，其中摻雜50nm 金粒子的樣品，其空間電荷限制電流機制最為明顯。電容-電壓量測部分，摻有金奈米粒子的樣品，能明顯觀察到遲滯曲線，摻雜較大金奈米粒子的樣品，遲滯效應更為明顯，且有較大記憶窗口△VFB=0.23V。

The electro-optical properties of the ZnO thin film are affected by the deposition parameters. In this study, we find the optimum growth parameters to grow high quality
ZnO film. We change the RF power to adjust the surface roughness. The higher RF power will result in a higher deposition rate and rough surface roughness. We obtained
an optimum surface roughness of 1.811nm at 50W RF power. The ZnO films have more than 80% transmittance in visible range, and obvious absorption in UV range. A
significant peak in the wavelength of 385nm is observed in PL measurement. For the electric characteristics, the resistivity of as-grown ZnO films is high and decreases with
post annealing treatment. We have obtained a minimum resistivity of 2.764×10-2(Ω-cm) at 700oC annealing treatment. Under the fixed 50RF power and 5sccm Ar flux, the optical characteristics and the crystal qualities are worse in the lower pressure (below 5mTorr). The ZnO films have lowest resistivity of 1.826×10-2(Ω-cm) in the 15mTorr
and, strongest PL intensities in 25mTorr after 700oC annealing treatment. After the optimum growth condition, we enhance the optical characteristics through the surface Plasmon effect of the metal nanoparticles. The nano gold particles in the diameter of 50nm and 200-250nm can be obtained under the 5nm and 10nm Au film deposition and
annealing at 700oC, respectively. For the optical characteristics, the PL intensity and optical transmittance are enhanced dependent on the size and position of the gold nanoparticles. For the electric characteristics, the n-ZnO/p-Si shows a good rectification effect. The mechanisms of current conduction are space charge current limit, and tunnel current. Sample with 50nm diameter has a significant space charge current limit
mechanism. In the C-V measurement, we observed the hysteresis curve in the sample with gold nanoparticles. The sample with larger gold particles have larger memory
window of △VFB=0.23.

1.1 前言與研究動機……………………...………………………2
1.2 論文組織……………………………..……………………….2
第二章 理論基礎………………………………..…………...……3
2.1 氧化鋅特性…………………………………...………………3
2.1.1 晶格結構………………..………………….……….…...….3
2.1.2 光電性質………………………………….……………..….3
2.2 射頻濺鍍………………………………………………..….....5
2.3 金氧半二極體電容……………………………………..…….7
第三章 量測系統及原理……………………………………….…9
3.1 光致螢光(Photoluminescence,PL)…………..……..……10
3.2 霍爾量測系統(Hall effect measurement system)……...10
3.3 紫外線可見光光譜儀(Ultraviolet Visible Spectrophotometer, UV-Vis)......................................................11
3.4 X光繞射(XRD)…………………………...……………...…..11
3.5 原子力顯微鏡(Atomic Force Microscope)………….……12
第四章 實驗步驟與分析方法………………………………..….16
4.1 實驗流程…………………………………………………….16
4.2 實驗設備……………………………………………….…....17
4.3 氧化鋅(ZnO)薄膜製程………………………..………..…...18
4.3.1 實驗基板…………………………......…………………....18
4.3.2 樣品清洗…………………………………………..………19
4.3.3 濺鍍製程……………………………………………..……20
4.4 快速高溫回火(RTP)………………………………………..20
4.5 薄膜特性量測及分析……………………………………….21
4.6 氧化鋅薄膜摻入金奈米粒子…………………………….…21
第五章 實驗結果與討論………………………………………...22
5.1 射頻功率之影響………………………………………….....22
5.1.1 前言…………….………………………………………….22
5.1.2 鍍膜速率的分析…………….…………………………….22
5.1.3 表面型態之分析………………………….…………….…22
5.1.4 晶體結構分析……………………………………….….....23
5.1.5 電性分析………………………………………………..…23
5.1.6 光學分析………………………………………………..…24
5.1.7 總結………………………………………………….….…24
5.2 成長壓力之影響………………………………………….....31
5.2.1 前言………………………………………………….…….31
5.2.2 鍍膜速率的分析…….………………………………….…31
5.2.3 表面型態之分析………………….…………………….…31
5.2.4 晶體結構分析……………………………….………….…32
5.2.5 電性分析………………………………………….…….....32
5.2.6 光學分析……………………………………………….….32
5.2.7 總結…………………………………………………..……33
5.3 金奈米粒子之影響………………………………………….44
5.3.1 前言…………………………………………………..........44
5.3.2 金奈米粒子………………………………………..........…44
5.3.3 光學分析………………………………………………......44
5.3.4 電性分析.………………………………………………….46
5.3.5 總結………….…………………………………………….47
第六章 結論……………………………………………………...60
參考文獻……...……………………………………………….…61

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