本論文的研究目的為製作以分子束磊晶(MBE)方法在砷化鎵(GaAs)基板上成長12層砷化銦鎵(In0.75Ga0.25As)量子點綴於井(In0.1Ga0.9As)結構，分析雷射元件光學特性並達到1.3μm光通訊用波段。
雷射結構中，被覆層(cladding layer)中Al的比例提高將增加光的侷限但高濃度Al含量的AlGaAs磊晶難度較高且會降低鈹(Be)的參雜濃度，以模擬和實際量測不同Al比例(Al0.5、Al0.25、Al0.2、Al0.1)的結果，其中被覆層為Al0.2Ga0.8As有最佳的材料增益。主動層都為12層的In0.75Ga0.25As量子點和In0.75Ga0.25As量子點綴於井(In0.1Ga0.9As)結構，量子點綴於井結構主動層再摻雜Be。被覆層部分則固定為Al0.2Ga0.8As以達最佳的電性和光侷限效果，再以加大量子點的方式來增加波長，因為被覆層高溫成長間接高溫回火量子點，造成波長藍移置1.23μm。
雷射製程方面，以濕蝕刻製作寬度約為2μm的脊狀波導，目的是為了讓光在波導上傳輸為單模態，使得具有較小的色散損失。利用劈裂鏡面和脊狀波導產生Fabry-Perot雷射。
最後實際的量測結果，QD Laser(C528)操作在CW mode起始電流密度Jth=581A/cm2，最大發光強度(單邊)65mW而發光效率為510 mW/A。DWELL+PD Laser(C540)操作在CW mode起始電流密度Jth=880A/cm2，最大發光強度(單邊)34mW而發光效率為430 mW/A。

The purpose of this thesis is to fabricate 12-layer In0.75Ga0.25As quantum dot-in-a-well (In0.1Ga0.9As) structures grown by molecular-beam epitaxy (MBE) on GaAs substrate, and analyze the optical properties of laser devices for optical fiber communication systems.
For the laser structures, larger Al content AlGaAs cladding layer enhance the optical confinement, but encounter much challenges to improve the quality. After we simulate and fabricate different Al content laser structures, we find the best cladding layer composition - Al0.2Ga0.8As which performs a best material gain. In the active layer, 12 layers In0.75Ga0.25As quantum dots (QDs) and QDs in a well (DWell) structure, and DWell with Be-doping in the well structure are included in this study. The well structure slows down the hot carriers speed and Be-doping decrease the carrier life time and increases the electron-hole pair recombination rate. We increase the QDs deposition coverage to move the emission wavelength to 1.3μm, but the high temperature cladding layer growth process indirectly anneal the QDs and result in the emission wavelength blue shift to 1.24μm.
In the laser fabrication, to transport the light wave in smaller dispersion loss single mode waveguide, wet etching photolithography processes are adapted in this study to fabricate 2μm width ridge waveguide. The as-cleaved facets are used as Fabry-Perot laser mirrors in ridge waveguide lasers.
Finally, the current density of QD Laser(C528) lasing in CW mode is 581A/cm2, slope efficiency of 510mW/A and maximum power/facet of 65mW are obtained.Then the current density of DWELL+PD Laser(C540) lasing in CW mode is 880A/cm2, slope efficiency of 430mW/A and maximum power/facet of 34mW are obtained.

論文審定書………………………………...……………………….i
誌謝……………………………………………………….……….iii
中文摘要………………………………………………….….. …..iv
英文摘要………………………………..………………………….v
第一章 簡介……………………………………………..….…..1
1-1 前言…………………………………………………..……....1
1-2 量子點雷射…………………………………………..………1
1-3 論文架構……………………………………………..………3
第二章 量子點雷射原理與結構………………………………..4
2-1 雷射原理…………………………………………………...4
2-1-1雷射增益介質材料…………………………………..5
2-1-2 激發放射機制………………………………………6
2-1-3 居量反轉……………………….………………...……7
2-2 量子點雷射結構……………..………………………….8
第三章 元件結構與製程步驟…………………………………11
3-1磊晶片資料…………………………………………...……..11
3-2 製程示意圖-濕蝕刻技術製作脊狀波導………………...15
3-3 濕蝕刻製程步驟………………………………………...21
第四章 量測方法與結果…………………………………..….26
4-1 量測系統介紹及驗證………………………………...…26
4-2 Fabry-Perot 量測介紹…………………….…………...29
4-2-1 Fabry-Perot共振條件…….…………………….……..29
4-2-2 Hakki Paoli method量測方法介紹........................30
4-3 L-I&OSA量測方法介紹……………………………...31
4-4 量子點綴於井結構雷射量測結果…………………….32
4-4-1 雷射電性量測………………………………...……...32
4-4-2 雷射L-I&OSA量測…………………………….……37
第五章 結論……………………………………………...………50
參考文獻………………………………………………...……51

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