在這篇論文中，我們利用電漿輔助分子束磊晶在m面藍寶石基板上，成長m面氮化鎵薄膜，在成長的過程中，Ⅴ/Ⅲ比與成長溫度為調控的變因，藉由調變這兩種參數，成長出品質較好的薄膜，以利探討其各向異性特性。
在進行藍光發光二極體製程之前，我們利用硫化的方法對氮化鎵做表面處理，並用電子槍蒸鍍金屬電極於氮化鎵上，以傳輸線模型(TLM)量測不同表面處理下氮化鎵之特徵接觸電阻(Specific contact resistance)值ρc，藉此找出形成良好歐姆接觸之條件，接著以霍爾棒量測(Hall bar measurement)不同方向載子遷移率，以探討載子傳輸時較不會遇到阻力的方向，使之展現出良好的元件特性。
M面氮化銦鎵藍光發光二極體(p-GaN/InGaN/n-GaN)，雙異質接面pin結構，薄膜之結構特性是使用X光繞射儀觀測，並以硫化銨去除表面原生氧化層，以增加電流特性，經由黃光微影製程後氮化鎵發光二極體，量測其不同電流下，電流電壓特性之關係。

M-plane GaN on the m-sapphire grown by plasma assisted molecular beam epitaxy (PAMBE) have been achieved. Ⅴ/Ⅲ ratio and growth temperature are the most important factors in the growth sequence.
The surface of m-plane GaN was treated by (NH4)2S and annealing for ohmic contact condition. The specific contact resistance of m-plane p-GaN was calculated by TLM model. Furthermore, the anisotropic characteristic of p-GaN mobility was obtained by hall bar measurement.
M-plane GaN based light-emitting diode was also fabricated through the photolithography process. The surface treatment effects was also discussed.

目錄
中文摘要
Abstract
圖目錄
第一章 序論 1
1.1 文獻回顧 1
1.2非極性面氮化鎵發光二極 4
1.3 目前成長m面GaN之進展 9
第二章 儀器介紹 10
2.1 分子束磊晶Plasma assisted molecular beam epitaxy (PAMBE) 10
2.2掃描式電子顯微鏡Scanning Electron Microscopy (SEM) 14
2.3 X光繞射儀(X-ray Diffraction, XRD) 16
2.4 感應耦合式電漿(Inductively-Coupled-Plasma, ICP) 19
2.5電子槍蒸鍍機 Electron beam (E-beam) 20
2.6 Van der Pauw 法量電阻率 23
第三章 m-GaN薄膜成長 27
3.1成長前之基板處理 27
3.2 M面GaN薄膜之成長 28
3.2.1 掃描式電子顯微鏡 28
3.2.2 X光繞射儀 30
3.3 M面GaN:Mg薄膜之成長 35
第四章M面GaN:Mg薄膜之分析 39
4.1 p-GaN歐姆接觸 39
4.2 TLM元件製程與量測方法 40
4.2.1樣品選取 40
4.2.2硫化處理步驟 40
4.2.3蒸鍍鎳(Ni)/金(Au)金屬電極 40
4.2.4傳輸線模型(transmission line model, TLM) 41
4.3數據分析與探討 42
4.4 載子遷移率之各向異性探討 46
4.4.1 載子的遷移率(carrier mobility) 46
4.4.2 霍爾棒量測 46
4.4.3 霍爾棒量測數據探討 50
第五章 M面p-GaN/InGaN/n-GaN 發光二極體之元件製程 52
5.1氮化銦鎵樣品結構 52
5.2 發光二極體元件製程 53
5.2.1 高台製作(Mesa) 54
5.2.2蝕刻高台(Etching Mesa) 58
5.2.3 n型電極製作 60
5.2.4 Ni(鎳)/Au(金)雙金屬薄層 62
5.2.5 p型電極製作 63
5.3 I-V curve量測 71
第六章 結論 76
參考文獻 77
附錄一 81
附錄二 88

[1] H. J. Round. Electrical World. vol. 49, p. 309, (1907).
[2] N. Holonyak Jr. and S. F. Bevacqua, Appl. Phys. Lett., vol. 1, pp. 82-83, (1962).
[3] S. Yoshida, S. Misawa, and S. Gonda, J. Vac. Sci. Tech. B., vol. 1, p. 250, (1983).
[4] N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett., vol. 48, p. 353, (1986).
[5] S. Nakamura, M. Senoh, T. Mukai, Jpn. J. Appl. Phys., vol. 30, p. 1708, (1991).
[6] Y. Ohshita, N. Sawaki, I. Akasaki, Solid State Communications, vol. 57, p. 405, (1986).
[7] S. Nakamura, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys. Part 2-Lett., vol.32, p. 8, (1993).
[8] Nikkei Sangyo Shimbun, Nov. 30, (1993).
[9] T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., vol. 36, p. 382, (1997).
[10] S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, Appl. Phys. Lett., vol. 69, p. 4188, (1996).
[11] R. Dingle, D. D. Sell, S. E. Stokowski, and M. Ilegems, Phys. Rev.B.,vol. 4, p.
1211, (1971).
[12] K. Horino, A. Kuramata, K. Domen, R. Soejima, and T. Tanahashi. Int. Symposium on Blue Laser and Light Emitting Diodes, p. 530, (1996).
[13] K. Domen, K. Horino, A. Kuramata, and T. Tanahashi, 15th IEEE Int. Semiconductor Laser Conference Digest, p. 149, (1996).
[14] K. Domen, K. Horino, A. Kuramata, and T. Tanahashi, IEEE J. Select. Top. Quantum Electron., vol. 3, p. 450, (1997).
[15] P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, Nature (London), vol. 406, p.865, (2000).
[16] Y. J. Sun, O. Brandt, M. Ramsteiner, H. T. Grahn, and K. H. Ploog, Appl. Phys. Lett., vol. 82, p.3850, (2003).
[17] B. Rau, P. Waltereit, O. Brandt, M. Ramsteiner, K. H. Ploog, J. Puls, and F. Henneberger, Appl. Phys. Lett., vol. 77, p. 3343, (2000).
[18] T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett., vol. 84, p. 3768, (2004).
[19] K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett., vol. 84, p. 5264, (2004).
[20] A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, and M. A. Khan, Appl. Phys. Lett., vol. 84, p. 3663, (2004).
[21] A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, Appl. Phys. Lett.,vol. 85, p. 5143, (2004).
[22] A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, Jpn. J. Appl. Phys., vol. 44, p. 173, (2005).
[23] N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, and M. R. Krames, Appl. Phys. Lett., vol. 86, p. 111101, (2005).
[24] H. Masui, A. Chakraborty, B. A. Haskell, U. K. Mishra, J. S. Speck, S. Nakamura, and S. P. DenBaars, Jpn. J. Appl. Phys.,vol. 44, p. 1329, (2005).
[25] R. Sharma, P. M. Pattison, H. Masui, R. M. Farrell, T. J.Baker, B. A. Haskell, F. Wu, S. P. DenBaars, J. S. Speck,and S. Nakamura, Appl. Phys. Lett., vol. 87, p. 231110, (2005).
[26] H. Masui, T. J. Baker, M. Iza, H. Zhong, S. Nakamura, andS. P. DenBaars, J. Appl. Phys., vol. 100, p. 113109, (2006).
[27] K.-C. Kim1, M. C. Schmidt, H. Sato, F. Wu, N. Fellows, M. Saito, K. Fujito, J. S. Speck, S. Nakamura, and S. P. DenBaars, phys. stat. sol. (RRL) 1, No. 3, 125–127 (2007)
[28] X. Li, X. Ni, J. Lee, M. Wu, Ü. Özgür, H. Morkoç,T. Paskova, G. Mulholland, and K. R. Evans, Appl. Phys. Lett., 95, 121107, (2009).
[29] Ugo Lafont, Henk van Zeijl , Sybrand van der Zwaag, Microelectronics Reliability 52,71–89, (2012).
[30] Rohm Blue-Violet Laser to Halve Dissipation Nikkei Electronics Asia May (2007).
[31] Y. Honda, Y. Iyechika, T. Maeda, H. Miyakei and K. Hiramatsui, Jpn.J.Appl. Phys. vol. 40, pp. L309–L312, (2001).
[32] N. Nanhui, W. Huaibing, L. Jianping, L. Naixin, X. Yanhui, H. Jun, D. Jun, S. Guangdi, Solid-State Electronics, vol.51, p. 860, (2007).
[33] T. Onuma, H. Amaike, M. Kubota, K. Okamoto, H. Ohta, J. Ichihara, H. Takasu, and S. F. Chichibu, Appl. Phys. Lett. 91, 181903 (2007).
[34] Hyun-Jae Lee, K. Fujii, T. Goto, T. Yao, and Jiho Chang, Appl. Phys. Lett. 98, 071904, (2011).
[34] V. M. Bermudez, J. Appl. Phys. 80, 1190 (1996).
[35] A. T. Ping, Q. Chen, J. W. Yang, M. Asif Khan, I. Adesida Journal of Electronic Materials, vol. 27, no. 4, pp. 261-265, (1998).
[36] Chi-Sen Lee, Yow-Jon Lin, and Ching-Ting Lee, Appl. Phys. Lett. 79, 3815 (2001).
[37] Yasuo Nannichi, Jia-Fa Fan, Haruhiro Oigawa and Atsushi Koma, Jpn. J. Appl. Phys. pp. L2367-L2369, (1988).
[38] Yow-Jon Lin, Chang-Da Tsai, Yen-Tang Lyu, and Ching-Ting Lee, Appl. Phys. Lett. 77, 687 (2000).
[39] 郭馨貽，「Thin-GaN 發光二極體電極配置對光電特性影響之研究」，國立中央大學，碩士論文，民國九十八年。
[40] X. Guo and E. F. Schubert, J. Appl. Phys. 90, 4191 (2001).
[41] J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller et al. Appl. Phys. Lett. 80, 4741 (2002).