氮化錳鎵被認為是未來可在室溫操作的稀磁性半導體(DMS)之一，本實驗所使用的樣品為本實驗室氮電漿輔助式分子束磊晶系統(PAMBE)在m面氮化鎵基板上成長不同錳含量之氮化錳鎵稀磁性半導體薄膜。成長過程利用控制氣動閥門開關將錳元素摻雜至氮化鎵薄膜，目的為抑制稀磁性半導體材料內過渡元素錳相關二次相的形成。樣品的結構與相關磁特性將透過掃描式電子顯微鏡(SEM)、拉曼光譜(Raman spectroscopy)、光致螢光(PL)、高解析x射線繞射(HRXRD)、x光吸收能譜儀(XAS)、x光光電子能譜儀(XPS)、超導量子干涉儀(SQUID)及磁性特性進行分析。
樣品藉由掃描式電子顯微鏡(SEM)觀察樣品形貌相關資訊，從拉曼光譜(Raman spectroscopy)得知錳有成功地取代鎵的位置，光致螢光(PL)則觀察出m面非極性氮化鎵之光學各向異性性質。經由高解析x射線繞射(HRXRD)系統確認樣品的成長方向為m面，且沒有發現二次相相關合金團簇存在於樣品中。透過x光光電子能譜儀(XPS)、x光吸收能譜儀(XAS)得知樣品的錳含量為2%~15%及錳的化學態為+2、+3價。最後藉由超導量子干涉儀(SQUID)的磁性量測得知樣品具有室溫鐵磁性的潛力。

Ga1-xMnxN has been considered to be one of the candidates for diluted magnetic semiconductors (DMS). In this thesis, we study the properties of epitaxial Ga1-xMnxN thin films grown on nonpolar m-plane GaN templates by plasma-assisted molecular beam epitaxy (PAMBE). The Mn contents in Ga1-xMnxN were varied by shutter control. The purpose is to inhibit the formation of secondary phase in diluted magnetic semiconductors. Samples were characterized and analyzed by scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence (PL), high resolution x-ray diffraction (HRXRD), x-ray absorption spectroscopy (XAS), x-ray photoelectron spectroscopy (XPS), and superconducting quantum interference device (SQUID) magnetometry.
SEM images show the surface morphology of the samples. The Raman scattering indicate the Mn atoms successfully substitute Ga sites. Nonpolar m-plane GaN:Mn thin films have the anisotropic optical properties are investigated using PL. The crystal orientation is m-axis, without secondary phase inclusions were confirmed through HRXRD. The concentration of Mn atoms are 2%~15% and the configuration of Mn ions are Mn+2、Mn+3 was determined by XPS and XAS. Finally, above room temperature ferromagnetism of Ga1-xMnxN thin films is observed by magnetization measurement of SQUID.

目錄
論文審定書 i
摘 要 ii
Abstract iii
目錄 iv
圖目錄 vi
表目錄 ix
第一章 緒論 1
1.1 氮化鎵背景 1
1.2 非極性氮化鎵光學特性及發展 4
1.3 稀磁性半導體發展與介紹 6
第二章 實驗系統與原理介紹 9
2.1 分子束磊晶系統 (plasma assisted molecular beam epitaxy, PAMBE) 9
2.2 掃描式電子顯微鏡 (scanning electron microscopy, SEM) 11
2.3 拉曼光譜 (Raman spectroscopy) 13
2.4 光致螢光 (photoluminescence, PL) 15
2.5 x光吸收能譜儀 (x-ray absorption spectroscopy, XAS) 16
2.6 x光光電子能譜儀 (x-ray photoelectron spectroscopy, XPS) 17
2.7 超導量子干涉儀 (superconducting quantum interference device, SQUID) 18
2.8 高解析x光繞射 (high-resolution x-ray diffraction, HRXRD) 19
第三章 實驗程序與樣品資訊 21
3.1 系列一不同錳成長時間於m-GaN模板上成長Ga1-xMnxN薄膜之樣品資訊 21
3.2 系列二不同成長溫度於m-GaN模板上成長Ga1-xMnxN薄膜之樣品資訊 23
第四章 量測分析與討論 25
4.1 m面氮化錳鎵薄膜結構特性 (The structural properties of m plane Ga1-xMnxN thin films) 25
4.1.1 掃描式電子顯微鏡影像 (SEM images) 25
4.1.2 高解析x光繞射光譜 (HRXRD spectrums) 29
4.2 m面氮化錳鎵中錳含量及電子組態之分析 (Analysis of Mn component and the configuration in m plane Ga1-xMnxN thin films) 34
4.2.1 x光吸收能譜量測 (XAS measurement) 34
4.2.2 x光光電子能譜量測 (XPS measurement) 39
4.3 m面氮化錳鎵薄膜光學極性 (The optical polarity of m plane GaMnN thin films) 44
4.3.1 光致螢光光譜量測 (PL measurement) 44
4.3.2 拉曼光譜量測 (Raman measurement) 59
4.4 m面氮化錳鎵薄膜磁特性 (The magnetic properties of m plane GaMnN thin films) 65
4.4.1 超導量子干涉儀磁矩與磁場關係曲線量測 (The magnetization-magnetic field measurement of SQUID) 65
4.4.2 超導量子干涉儀磁矩與溫度關係曲線量測 (The magnetization-temperature measurement of SQUID) 72
第五章 結論 78
參考文獻 79

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