本實驗共分為兩部份，量測利用氮電漿輔助分子束磊晶系統(PAMBE)，在c面n-type氮化鎵基板上成長氮化銦鎵奈米柱，以及量測同樣使用氮電漿輔助分子束磊晶系統成長氮化銦鎵薄膜。並藉由電子束掃描顯微鏡來了解樣品表面形貌。透過高解析度X射線繞射儀可得知樣品中氮化銦鎵的銦含量，並以銦含量作為調控的變因。也為了使太陽能電池所能涵蓋的波長更長，藉由低溫高摻雜銦來成長氮化銦鎵薄膜。
為了分析樣品的光學特性，利用光致螢光(PL)系統以及陰極射線發光(CL)系統做一系列的量測，此一系列的量測，藉由調變不同參數來比較及分析，可擴展製作太陽能電池的可能性。
在第一部份，可得到較好的氧蝕刻奈米球參數、較好的鎂摻雜參數以及五三族比參數，這些參數為奈米柱結構的最佳成長參數。第二部分系列樣品使用低溫成長並摻雜高銦含量，最後可得到銦含量約為20~40%，使得太陽能電池能涵蓋更長的波長。

In this thesis we study the physical properties of gallium nitride (GaN) nanorods and InGaN thin films. These samples were grown by plasma assisted molecular beam epitaxy (PAMBE) on c-plane GaN templates. Two types of samples were grown. The first set of samples were n-i-p GaN nanorods (NR) GaN templates fabricated using a predefined template. The second type of samples were epitaxial thin films of InGaN and InN grown on GaN templates.
The surface morphology of these samples was characterized by scanning electron microscopy (SEM) and structure and indium content was verified using two methods. The first method was by high resolution x-ray diffraction (HRXRD) to identify the various crystalline phases, while photoluminescence (PL) and cathodoluminescence (CL) spectroscopies were used to measure the optical band gap.
From our result we find that by optimizing the plasma etching conditions, and improving the Mg doping parameter, n-i-p nanorods can be obtained. In case of the epitaxial thin films, we observe that high indium content can be incorporated by optimizing the growth temperatures.

論文審定書 i
摘 要 ii
Abstract iii
目錄 iv
圖目錄 vi
表目錄 ix
第一章 序論 1
1.1 太陽能電池簡述 1
1.2 氮化銦鎵及奈米柱太陽能電池簡介 2
1.3 實驗原理與基礎 4
1.4 太陽能電池性能表徵 6
1.5 氮化銦鎵材料探討 9
第二章 儀器介紹 10
2.1 分子束磊晶系統 (plasma assisted molecular beam epitaxy, PAMBE) 10
2.2 掃描式電子顯微鏡 (scanning electron microscopy, SEM) 11
2.3 高解析X光繞射 (high-resolution x-ray diffraction, HRXRD) 12
2.4 光致螢光 (photoluminescence, PL) 14
2.5 陰極射線發光 (cathodoluminescence, CL) 14
2.6 電子束蒸鍍 (electron beam evaporation) 15
2.7 感應耦合電漿蝕刻機 (ICP-etching) 16
2.8 拉曼光譜儀 (Raman spectroscopy) 17
第三章 實驗步驟與樣品資訊 18
3.1 氮化銦鎵奈米柱太陽能電池結構成長與樣品資訊 (樣品組 A, B, C) 18
3.1.1 氧電漿蝕刻參數變化組 (樣品A1, A2, A3) 19
3.1.2 鎂摻雜參數變化組 (樣品B1, B2, B3) 20
3.1.3 銦摻雜參數變化組 (樣品C1, C2) 21
3.2 蕭基太陽能電池成長與樣品資訊 (樣品組 D, E, F) 22
3.2.1 銦摻雜參數變化組 (樣品D1, D2) 22
3.2.2 三五族比參數變化組 (樣品E1, E2) 23
3.2.3 銦鎵比參數變化組 (樣品F1, F2) 24
第四章 光學量測與分析 25
4.1 氮化銦鎵奈米柱太陽能電池結構光學量測與分析 (樣品組 A, B, C) 26
4.1.1 掃描式電子顯微鏡影像 26
4.1.2 光致螢光發光光譜 29
4.1.3 陰極射線發光光譜 44
4.1.4 高解析x光繞射光譜 46
4.1.5 拉曼光譜 50
4.1.6 銦含量探討 52
4.2 蕭基太陽能電池結構光學量測與分析 (樣品組 D, E, F) 53
4.2.1 掃描式電子顯微鏡影像 53
4.2.2 光致螢光發光光譜 56
4.2.3 陰極射線發光光譜 61
4.2.4 高解析x光繞射光譜 63
4.2.5 拉曼光譜 69
4.2.6 銦含量探討 71
第五章 結論 72
參考文獻 73
附錄: 76
A1. 高解析x光繞射光譜data base 76

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