Bi4Ti3O12為強電性陶瓷材料，其主要應用在電子產業上的電容、導體、記憶體元件以及感測器上。其居理溫度在675℃。在其結構上，其在高於675℃時，為I4/mmm的tetragonal相的結構，低於675℃時，因為受到內部應變的影響，結構由tetragonal相改變成B2cb的orthorhombic相。隨著溫度越低，改變越顯著。由orthorhombic相再轉成B1a1的monoclinic相。在低溫下的這兩個相都有人探討。本文假設Bi4Ti3O12在低溫下以B2cb的orthorhombic相存在。利用x-ray確認其成分，並利用光學顯微鏡與掃瞄是電子顯微鏡觀察其表面結構。因為高溫相至低溫相結構的改變所產生相變化的關係，透過穿透式顯微鏡影像與電子繞射點的觀察，證實Bi4Ti3O12具有101雙晶面的存在。並且更進一步在本實驗中，同樣利用電子顯微鏡與電子繞射圖，Bi4Ti3O12在試片上也找到可能為180度晶域的存在。

Bi4Ti3O12(BIT) is ferroelectric ceramics material. It’s application on capacity, conductor, memory device, and sensor. It’s curie point at 675oC. When the temperature above 675oC, the structure of BIT is tetragonal (space group is I4/mmm). As temperature below 675oC, because BIT effected by inner strain, the structure of BIT transform from tetragonal to orthorhombic (space group is B2cb). And then, it may transform from orthorhombic to monoclinic. The texture assuming the structure of BIT is orthorhombic. This texture use x-ray anglicizing to determine component of BIT. On the other hand, using optical microscopy and scaning electron microscopy to observe the surface structure. Because of phase transformation, this texture confirm BIT have 101 twin by images and diffraction pattern of transmission electron microscopy. Further, this texture also find that BIT may have 180o domains on some grains.

第1章 簡介(Introduction）….……….....…………………………1
第2章 文獻回顧(Literature Review)…...………………………….3
2.1強電性陶瓷材料…………….…………………………3
2.2 Aurivillius結構………………………………………...3
2.3 Bi4Ti3O12結構…………………………………………4
2.4 指標轉換………………………………………………10
2.5 雙晶…………………………………………………...13
2.5.1 不同的雙晶介面上繞射點的特徵………………14
2.5.1.1 Reflection twin………………………………….14
2.5.1.2 Rotation twin……………………………………15
2.5.1.3 雙晶介面的確認……………………………….15
2.6 晶界…………………………………………………...16
2.6.1

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