本實驗是利用四乙矽酸(TEOS)以溶膠凝膠法(sol-gel)製備二氧化矽(SiO2)作為絕緣層的介電材料，成膜方法是用旋轉塗佈法(spin-coating)。
改變其添加TEOS的量，藉以改變成膜的條件，並找出容易成膜最適合的濃度，然後嘗試加入有機分散劑(Octyl Phenol Ethoxylate)，其目的是使溶液裡的分子能夠均勻地分散，並且在成膜之後改善其粗糙度使之更加平整，以AFM量測RMS值，其測量結果皆落在1nm以下，此結果顯示出加入分散劑能有效的改善粗糙度。之後，我們以這些材料做成MIM結構，發現在加入采酮後，因材料均勻分散，材料與材料之間變得更加緻密，且黏度提升，而膜厚也隨之增加，量測其漏電流比未加入時的還要小10倍。
此後將其薄膜應用於TFT元件的絕緣層之中，我們的半導體層是使用熱蒸鍍法來蒸鍍Pentacene，因絕緣層與半導體層之間的介面會改變Pentacene的排列，所以我們以O2 Plasma來改善其介面，讓分子能夠整齊排列，藉此影響載子移動率，並獲得其元件特性。

SiO2 solutions were prepared from tetraethylortho-silicate (TEOS) by using the sol-gel process to fabricate dielectric materials of the insulator.
We weighed different weight of TEOS in the solution and looked for the suitable conditions which easily fabricate the thin film.
Then, we tried to add organic dispersants ( Octyl Phenol Ethoxylate ) in the SiO2 solution for the purpose of making molecules dispersed in the solution uniformly. After being a membrane, it could improve the roughness to make it more smooth. We used AFM to measure the root-mean square (RMS). The purpose of measurement was less than 1nm. Then we used these materials to make metal-insulator-metal (MIM) structures. And the measurement showed the leakage current was 10 times less than that without adding it in the solution.
After that, we applied the thin film to the insulator of the thin film transistor (TFT). Pentacene of the semiconductor layer was thermally deposited and the thickness was about 50nm. Because the interface between the insulator and the semiconductor could change the arrangement of Pentacene, so we used O2 plasma to improve the interface. The process could make the molecules arrange regularly and influence the carrier mobility, and that can let us get the characteristic of the TFT.

目錄
誌謝.........................................................................................................I
摘要.........................................................................................................II
Abstract...................................................................................................III
目錄.........................................................................................................IV
圖目錄.....................................................................................................VII
表目錄.....................................................................................................X
第一章 緒論............................................................................................1
1.1 前言...............................................................................................1
1.2 研究動機與目的...........................................................................3
1.3 溶膠凝膠法概論...........................................................................5

第二章 理論基礎與文獻回顧................................................................7
2.1 薄膜電晶體概論...........................................................................7
2.1.1 基本元件構造........................................................................8
2.1.2 工作原理及公式....................................................................9
2.1.3 薄膜電晶體的重要參數........................................................10
2.2 溶膠凝膠法...................................................................................12

第三章 藥品與儀器................................................................................21
3.1 藥品...............................................................................................21
3.2 儀器介紹.......................................................................................22
3.2.1 雙晶薄膜X光繞射儀( X-ray diffractmeter, XRD）...........22
3.2.1.1 儀器簡介.........................................................................22
3.2.1.2 儀器原理.........................................................................23
3.2.2 旋轉塗佈機( spin coater ) .....................................................26
3.2.3 蒸鍍機( Evaporator ) .............................................................27
3.2.3.1 儀器簡介.........................................................................27
3.2.3.2 儀器原理.........................................................................28
3.2.4 表面輪廓儀(Surface profiler) ...............................................29
3.2.5 原子力量子顯微鏡( AFM ) ..................................................31
3.2.5.1 儀器簡介.........................................................................31
3.2.5.2 儀器原理.........................................................................32
3.2.6場發射型掃描式電子顯微鏡FEG-SEM..............................38
3.2.6.1 儀器簡介.........................................................................38
3.2.6.2 儀器原理.........................................................................39
3.2.7半導體參數分析儀HP4155...................................................43

第四章 溶液配製與元件製作................................................................45
4.1 實驗架構.......................................................................................45
4.2 實驗步驟.......................................................................................46
4.2.1 溶液的配製............................................................................47
4.2.2 絕緣層薄膜及元件之製作....................................................47

第五章 實驗結果與討論........................................................................50
5.1 以溶膠凝膠法製作SiO2薄膜之成膜特性及電性量測.............50
5.1.1 添加不同劑量TEOS之成膜差異性....................................50
5.1.2 在SiO2溶液中添加分散劑...................................................61
5.2 薄膜電晶體之元件電性量測.......................................................68
5.2.1電性量測結果與討論.............................................................69

第六章 結論與未來工作........................................................................83

第七章 參考文獻....................................................................................85

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