近十年以來，各種不同結構設計與感測機制的離子感測器已被廣泛應用於工業、環境檢測與生醫等不同領域，然而不同溫度下之待測溶液常會造成離子感測器之讀值有所誤差產生。有鑑於此本論文將開發一種延伸式閘極場效電晶體 (Extended-gate Field-effect Transistor, EGFET)為基礎之微型離子感測器晶片，並探討其輸出特性受不同溫度(20℃~50℃)之影響(pH讀值誤差高達12.71％ ~ 15.43％)，以及開發一種可以大幅降低其pH讀值誤差之溫度補償與校正電路。
本論文利用半導體製程設計製作一種延伸式閘極場效電晶體(Extended-gate Field-effect Transistor, EGFET)，並結合橋式讀出電路、溫度感測器與溫度感測器校正電路以及訊號差分溫度補償電路，完成能夠進行溫度補償的模組，用橋式讀出電路讀出微型感測器在訊號輸出時受溫度影響的變化，而使用溫度感測器量測緩衝液受溫度影響產生的電壓訊號，再將其量測到的電壓訊號藉由溫度感測校正電路進行電壓訊號的校正，最後將校正完後的訊號與微型感測器輸出訊號一起輸入訊號差分溫度補償電路進行整體的溫度補償電壓輸出。本研究將探討分析溫度補償前後對pH值酸鹼值變化特性的影響，進而得到溫度補償使用範圍。
本論文所使用之EGFET微型離子感測器之尺寸為11 mm × 13 mm × 0.5 mm，感測區域之面積為1 mm × 1 mm，量測溫度為20℃~50℃，待測溶液之pH值為pH2~pH10，在微型感測器經補償電路作溫度補償後的量測結果顯示除了50℃下無明顯補償效果以外，20℃~45℃範圍內皆有相當好的補償效果，沒有溫度補償校正時，20℃下平均pH讀值誤差為12.71％，45℃下平均pH讀值誤差為15.43％，有溫度補償校正時，20℃下平均pH讀值誤差為8.16％，45℃下平均pH讀值誤差為11.38％。本論文成功開發一種具溫度補償與校正功能之延伸式閘極場效電晶體離子感測器，其應用範圍在20℃~ 45℃之下，而pH讀值誤差控制在8.16％。

In the last decade,various structural designs and sensing mechanisms of ion sensors have been widely used in industrial,environmental monitoring and biomedical areas.However,the sensing characteristics of those ion sensors are obviously affected by the temperature of testing solution and therefore results in wrong readouts.To improve this issue,this thesis devoted to develop an extended-gate field-effect transistor(EGFET) based micro ion sensors with temperature compensation and calibration functions.The output characteristics of the presented EGFET ion sensors are measured under different temperatures (20℃~50℃) and various hydrogen ion concentrations (pH2~pH10).
This thesis utilizes micro-electromechanical systems (MEMS) technology to develop EGFET-based micro ion sensors.The signal readout circuit is built by four components:bridge readout circuit,temperature sensors,temperature calibration circuit and differential temperature compensation circuit.The EGFET-based micro ion sensor and the signal readout circuit are combined to form the EGFET-based ion sensor with temperature compensation and calibration functions.The main processing steps of the EGFET in this study involue four photolithographic and two thin-film deposition processes.The influence of output characteristics before and after the temperature compensation,and the temperature range of compensation could be obtain in this study.
The chip size of the EGFET microsensor is 11 mm × 13 mm × 0.5 mm and the sensing area is 1 mm × 1 mm.The temperature range of the measured standard buffer solution is from 20℃ to 50℃,and the various hydrogen of the standard buffer solution is from pH2 to pH10.The measured results show that the temperature compensation circuit has excellent compensation effect under 20℃~45℃, respectively,without temperature compensation.After temperature compensation,the average error the various hydrogen have become 12.71% and 15.43% under 20℃ and 45℃,respectively,without temperature compensation.After temperature compensation, the average error of the various hydrogen have become 8.16% and 11.38% under 20℃ and 45℃,respectively.The temperature compensation and calibration circuit in this study has significantly reduce the error of the signal readout characteristic.

論文審定書.....................................................................i
誌謝..............................................................................iii
摘要..............................................................................iv
Abstract.........................................................................v
目錄.............................................................................vii
圖目錄...........................................................................x
表目錄.........................................................................xii
第1章　　緒論 .....................................................................1
1.1 前言..............................................................................1
1.2 研究動機........................................................................1
1.3 實驗方法及論文架構........................................................2
第2章 原理介紹...............................................................4
2.1 感測器種類 ....................................................................4
2.2 延伸式閘極感測場效電晶體原理介紹.................................7
2.2.1 吸附鍵結模型...............................................................8
2.2.2 延伸式閘極感測場效電晶體工作原理...............................9
2.3 離子感測器之補償與校正.................................................11
2.3.1 溶液溫度效應..............................................................12
2.3.2 參考電極溫度效應........................................................13
2.3.3 緩衝液與感測膜界面.....................................................13
2.3.4 EGFET 臨界電壓溫度效應 ...........................................14
2.4 感測器之溫度補償...........................................................15
2.4.1 橋式讀出電路架構........................................................16
2.4.2 溫度補償電路..............................................................19
2.4.3 感測器準位校正原理 ...................................................20
2.4.4 訊號差分溫度補償原理.................................................22
第3章 元件設計與製作....................................................25
3.1 延伸式閘極感測場效電晶體元件....................................25
3.1.1 延伸式閘極場效電晶體結構與光罩佈局設計.................25
3.1.2 延伸式閘極場效電晶體製程整合設計...........................28
3.1.3 詳細製程步驟與參數................................................. 29
3.2 氯離子感測薄膜配製.....................................................35
3.2.1 實驗藥品及材料........................................................35
3.2.2 感測薄膜配製...........................................................35
3.3 溫度感測器補償電路製作...............................................36
3.3.1 橋式源極訊號讀取電路...............................................36
3.3.2 溫度感測器之準位校正電路.........................................38
3.3.3 訊號差分溫度補償電路...............................................39
3.3.4 量測用溶液成份與酸鹼值...........................................40
第4章 結果與討論........................................................42
4.1 延伸式閘極場效電晶體.................................................42
4.1.1 延伸式閘極場效電晶體量測分析.................................43
4.2 離子感測器特性量測分析..............................................44
4.2.1 感測靈敏度與線性度分析...........................................44
4.3 溫度感測器補償輸出結果..............................................46
4.3.1 橋式訊號讀出電路之量測結果....................................48
4.3.2 溫度感測器之量測結果..............................................49
4.3.3 準位校正之量測結果.................................................51
4.3.4 訊號差分溫度補償之量測結果....................................52
第5章 結論與未來展望.................................................59
5.1 結論..........................................................................59
5.2 未來展望....................................................................60
參考文獻..........................................................................62

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