一種新型CMOS可調帶通濾波器和電壓控制振盪器已經被做出來了。這兩種電路所使用的是UMC 0.5 µm CMOS 製程技術。這個CMOS 可調帶通濾波器是利用MOS電晶體內的intrinsic寄生電容來實現，並且不需要在同晶片上做平面旋轉電感和poly電容，因此，晶片的整體面積下降。模擬的結果顯示這個濾波器中心頻率可在190MHz到347MHz範圍內調整，因此，符合中頻濾波器200MHz到300MHz的應用；它的Q值最高可調到983。若應用這個濾波器的點子，一個二階電壓控制的振盪器也可以被實現；模擬結果顯示這個振盪器的振盪頻率可在444MHz到746MHz範圍內調整。

A novel CMOS tunable bandpass filter and a novel voltage controlled oscillator are proposed. Both circuits are designed using the UMC 0.5μm CMOS process parameters. The CMOS tunablebandpass filter is realised by using the intrinic parasitic capacitance of the MOS transistor. This filter has neither on-chip planar inductor nor poly-capacitance; therefore, the chip area is reduced. Simulation results show that the bandpass filter is tunable in the range between 190MHz and 347MHz. Therefore, the filter is suitable for the IF filter application that is between 200MHz and 300MHz. The Q-factor is also tunable and has a maximum value of 983. Applying the circuit of the bandpass filter, a second order voltage controlled oscillator is designed. Simulation results show that the voltage controllable oscillator is tunable in the range between 444MHz and 746MHz.

List of Contents
Ⅰ. Introduce 1
Ⅱ. The Basic Principle and some inductor implementation method
of RLC filter
A. Basic Principle of RLC Bandpass Filter 2
B. Traditional Inductors 3
1. CMOS On-Chip Spiral Inductor 3
2. Bondwire Inductor 6
3. Active inductor 6
4. Active Inductor of using Intrinsic-Capacitance 8
Ⅲ. CMOS High-Q IF Bandpass Filter Design 10
A. Parallel RLC Resonant Circuit 11
B. Q-enhancement Circuit 13
C. Common-Mode Feedback circuit 15
D. CMOS active Bandpass Filter Design 16
1. Circuit Description and Analysis 16
2. f0 Tuning 18
3. Q-tuning 18
E. Simulation Results 19
Ⅳ. Second-order tunable-oscillator design 23
A. Circuits Description and Analysis 23
B. Simulation Results 26
Ⅴ. Conclusion 29
Reference 30

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