論文摘要

實驗在室溫下以反應式濺鍍法製造氮化鋯薄膜，以金屬鋯為靶材，通入不同流量氮氣（反應氣體）製備薄膜，鍍於p-type(100)矽晶片、銅片與鋁片之基材上，將不同基材之薄膜，厚度約1μm，經退火觀察晶粒變化及與基材間是否相互作用或擴散。
氮氣流量在5和6 sccm，氮原子與鋯原子比率已接近相等，符合正化學計量比，且在穿透式電子顯微鏡(TEM)的繞射圖案中未發現金屬鋯的存在，全為氮化鋯。
由TEM及X-光繞射結果得知，氮化鋯晶粒在900及1000℃退火後無明顯成長，而矽基材薄膜隨著熱處理溫度及時間增長有（200）面擇優取向，晶界無鋯矽化合物。
在ZrN/Si介面處有5∼15nm大小之極小晶粒，隨著與界面距離增加形成晶粒大小在20∼50nm間之柱狀晶。
鍍於銅之薄膜晶粒大小分布範圍較大在10∼80nm之間，在界面處同樣有3∼15nm大小之極小晶粒。ZrN/Cu 650℃ 1小時退火後界面無銅鋯化合物。

Abstract

In this study, ZrN films were deposited on silicon wafer、copper and aluminum sheets by reactive sputtering of Zr target at room temperature in a mixed N2-Ar atmosphere with N2 gas flow rates of 5 and 6 sccm. Films of ZrN about 1μm thick were annealed at various temperatures in order to study the grain growth and the inter-diffusion of atoms.
Electron probe X-ray microanalyzer（EPMA） showed that the
as-deposited ZrN films were stoichiometric. The ring patterns of electron diffraction in transmission electron microscope (TEM) indicated that only ZrN was present without any Zr metal.
The grain size of ZrN showed no apparent change after annealing at 900℃ and 1000℃, but showed that（200） orientation is preferred to （111）orientation. No Zr-Si compound were found at the ZrN/Si interface after annealing.
It was revealed that the ZrN grain size in the ZrN/Si interface was about 5∼15 nm, then broadened to columnar structure of 20∼50nm in diameter away from the interface.
The grain size of ZrN on Cu substrate was 3∼15 nm at the ZrN/Cu interface and leave away from the interface was 10∼80 nm. No Cu-Zr compound was found at the interface after annealing at 650℃ for 1 hour.

目錄
摘要 i
1.簡介 1
1.1濺鍍系統 2
1.1.1濺鍍原理 2
1.1.2濺鍍裝置 4
1.2文獻回顧 5
1.3本研究之目的 6
2.實驗步驟 7
2.1實驗方法 7
2.1.1實驗材料 7
2.1.2濺鍍流程 7
2.1.3真空封管及退火 8
2.2分析方法
2.2.1 X光繞射分析 8
2.2.2掃描式電子顯微鏡（SEM） 9
2.2.3穿透式電子顯微鏡（TEM） 9
3.結果
3.1 X光繞射分析 10
3.2電子微探儀（EPMA） 10
3.3掃描式電子顯微鏡 11
3.4穿透式電子顯微鏡 11
3.4.1 N5-Si試片 11
3.4.2 N6-Si試片 11
3.4.3 ZrO2之生成 12
3.4.4 N6-Cu試片 12
4.討論
4.1退火的影響 14
4.2晶粒大小 14
4.3擇優取向 15
4.4氮化鋯作為擴散阻礙層之效用 15
4.5鋯原子與氮原子比率 16
4.6鋯、氮與氧間的關係 17
5.結論 18
6.參考文獻 19

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