本論文研究積體電路製造技術中的多層導體連線製程。為了因應未來深受矚目的深次微米積體電路，元件的尺寸必須不斷地縮小；而多層金屬導體連線的設計，也成為超大型積體電路技術所必須採用的方式。然而，隨著金屬導線層的數目增加及導線間的距離不斷縮小，電子訊號在金屬連線間傳送時，金屬連線的電阻-電容延遲時間(RC delay time)，變成半導體元件速度受限的主要原因。為了降低訊號傳遞的時間延遲：在降低電阻方面，現今以金屬銅（電阻率為1.7μΩ-cm）來取代過時的金屬鋁（電阻率為2.7μΩ-cm）成為導線的連線系統。此外，由於元件縮小導致傳輸導線的電流密度增加，使導線內的電致遷移效應（electromigration）更嚴重，而銅的原子比鋁原子來得重，故可適當抑制電致遷移效應。而在降低電容方面，則朝向低介電常數 ( low-k ) 材料發展。但是在銅與鑲嵌的製程與電性操作的環境下，溫度與電場的作用，銅極易擴散至低介電常數材料中，並與之發生反應，造成材料特性的劣化與漏電流增大，甚至導致介電質崩潰。因此，在符合製程相容性要求的前提之下，發展具抗銅金屬擴散特性的介電阻障層材料，便成為重要的研究課題。
目前一種碳化矽(silicon carbide)材料薄膜，具有低的介電係數(k=4~5)，因此受到廣大的矚目，而被應用於介電阻障層技術中，用來取代傳統具高介電係數的氮化矽(silicon nitride) (k~8)，以降低導線系統的延遲時間。本論文將討論碳化矽膜的材料基本特性，以及其在製程整合時會遇到的一些問題，例如氟電漿與熱退火處理對碳化矽膜的影響；除此之外並研究其與銅導線整合時，所衍生的電性問題，並探討其漏電流的機制。

This thesis is to research connection process of multi-level conductor in integration circuits (ICs) manufacture technology. For the sake of sub-micro ICs which is gazed by people in the future, device’s dimension have to be scaled down unceasingly; besides, the design of conductor connection of multi-level metal is also to be adopted for ULSI technology. However, the number of metal connection layer is increasing as well as the distance between wires is shorter and shorter, which leads to the fact that the RC delay time of metal interconnection is the primary reason of limiting the speed of semiconductor device while electronic signal is delivered among metal interconnection. In order to lower delay time of signal propagation, there are two parts in the following:
In the aspect of lowering resistance, we substitute copper (resistance is 1.7μΩ-cm) at present for aluminum (resistance is 2.7μΩ-cm ) in the past so as to make copper be the wire for interconnection system. Furthermore, the scaled down device not only increase the current density of the wire but also increase the severity of electromigration inside the wire. Copper atoms are so heavier than aluminum atoms that copper atoms can restrain electromigration appropriately. In the aspect of decreasing capacitance, we will develop low dielectric constant (low-k). But copper with Damascene manufacture under the conditions of external operation such as temperature and electric field give rise to the fact that Cu diffuses into low-k material so easily that copper and low-k interact, which deteriorates the characteristic of the material、raises the leakage current and leads to the breakdown of the dielectric material. Therefore, it must be an important topic for study that we search for the dielectric barrier material with the characteristic against copper diffusion under the demand coinciding with integration process compatibility.
At present, because of the material film called silicon carbide with low dielectric constant (k=4~6) attracts a lot of people’s eyes deeply, it can applied to dielectric barrier technology to replace traditional dielectric barrier silicon nitride with high dielectric constant (k~8) for the purpose of alleviating delay time of the wire system. This thesis will discuss fundamental characteristics of silicon carbide film and some problems during the integration process. For instance, the impacts on silicon carbide under the conditions of fluorine plasma and thermal treatment; furthermore, this thesis will research the electric problems from the integration of low-k dielectric barrier and copper wire as well as probes into mechanism of leakage current.

Chapter 1 Introduction
1.1. General Background………………………….…….. 1
1.2. Motivation and Material Options…………………… 3
1.3. Organization of This Thesis………………………… 5

Chapter 2 Characteristics of Silicon Carbide Film
2.1. Introduction……………………………………………6
2.2. Manufacture of silicon carbide……………………….. 7
2.3. Experimental procedure and analyses…………………7

Chapter 3 Electrical characteristics of silicon carbide film
3.1. Introduction………………………………………….. 11
3.2. F ion implant damage effect…………………………. 12
3.3. Thermal annealing effect on silicon carbide film……. 12
3.4. Electrical property of silicon carbide………………… 13

Chapter 4 BTS measurement of silicon carbide film
4.1. Introduction…………………………………………... 16
4.2. Experiment process…………………………………... 16
4.3. BTS effect on silicon carbide film…………………… 17

Chapter 5 Conclusion

References…………………………………………………………………… 20

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