本論文中，希望藉著單分子光譜量測來探討半導體量子點在經過外場的誘發後之轉向。
像CdSe這類具Wurtzite結構的半導體量子點，具有特定的電雙極方向，通稱為其c軸，因此預期可藉著外加電場，誘使其指向方向隨誘發電場而變動。我們使用PMMA當成固定介質，並進行量子點樣品在這固定介質中的行為表現。此外在可自由轉動介質中，我們進行兩種不同介質的實驗，以探討其方向之控制可能性。
第一種方式是先將參雜量子點樣品之高分子混合臘之溶液以旋轉塗佈於已製作電極結構之蓋玻片上，通以電場使誘發量子點轉向而排列一致。而第二種方式是利用液晶薄膜當成載體，而半導體量子點則分散於其間，電場將同時對液晶分子與半導體量子點作用，藉此來觀察量子點的環境影響。
Wurtzite結構的量子點，其光激發之transition dipole moment為垂直於c軸之圓盤結構，因此我們可以藉著測量其螢光之極化方向，藉此瞭解個別量子點之指向，以及得到這些排列之方向整齊度。更進一步，藉著電場對液晶分子指向之影響，製造出量子點周遭不同之介電係數異向性質，藉此可以觀測環境對於量子點樣品之螢光衰變行為之影響。
測量個別的量子點產生的螢光，我們分別得到螢光的反成串測量，螢光強度，螢光偏極方向，螢光生命期，以及螢光相干測量，並期待經由這些結果可以得到量子點轉向之證據。在所加最大電場強度約1E7(V/m)，仍未能得到外場對單一量子點排列方向之轉動之結果。

This thesis aims to study external field induced alignment of semiconductor quantum dot by utilizing single molecule spectroscopy.
Wurtzite structure semiconductors, such as CdSe, exhibit strong electric dipole moment along its c-axis. It is proposed that quantum dot can be aligned along the applied field with sufficient strength. Experiments with two kind of matrix: PMMA mixing with wax, and liquid crystal thin film, were performed for that quantum dots are able to rotate freely in the matrix. Experiments with PMMA matrix were also performed as its rigid matrix for comparison. Interdigitated structure electrodes was deposited on the cover glass for the electric field experiments.
The topical transition (absorption and emission) of CdSe quantum dots has a bright plane perpendicular to its c-axis, and a dark axis along the c-axis. It thus used for characterizing the field alignment. For each observing quantum dot, we record the fluorescence intensity, anti-bunching, polarization anisotropy, and fluorescence lifetime information. In addition, we also analyze the fluorescence correlation spectroscopy to probe the small modulation signal from the fluctuating fluorescence intensity. However, the results indicate that we didn’t observe the field induced change with the field up to 1E7(v/m).

中文摘要
英文摘要
誌謝
總目錄
圖目錄
表目錄
第二章 實驗原理
2-1 量子點簡介
2-1.1 量子點
2-1.2 量子點的特性及應用
2-1.3 半導體
2-1.4 半導體量子點
2-1.5 量子點的製作方法
2-2 螢光簡介
2-2.1 螢光的機制
2-2.2 螢光量子效率
2-2.3 螢光非等向性
2-2.4 螢光生命期
2-2.5 螢光相關光譜
2-2.6 光子反成串
2-3 半導體量子點的光物理特性
2-4 螢光量測方式
第三章 實驗架構及樣品
3-1 實驗架構
3-2 實驗樣品
第四章 實驗方法及步驟
4-1 實驗方法
4-2 實驗步驟
第五章 實驗結果與討論
5-1 單一量子點在PMMA中的螢光量測
5-2 單一量子點在PMMA＋WAX中的螢光量測
5-3 單一量子點在液晶中的螢光量測
第六章 結論
參考資料

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