我們實驗室已經可以利用MBE磊晶出高品質AlGaN/GaN異質結構。利用van der Pauw的方式來做霍爾量測，在溫度77K下，所量測的遷移率和載子濃度分別為9300 cm2/Vs 和 7.9×1012 cm-2。使用黃光微影技術，在AlGaN/GaN異質結構之樣品上，先蝕刻出通道寬度為20 μm之Hall bar結構，再利用FIB製程將通道線寬切割縮小至分別為900 nm、500 nm、300 nm、200 nm、100 nm、80 nm和50 nm等七塊樣品之奈米線；接著成長絕緣層SiO2與閘極金屬層Al，將AlGaN/GaN異質結構之奈米線樣品製程MOSFET元件。做其在室溫300K下之漏電流量測，可觀察到線寬為100 nm和200 nm的樣品，閘極之可供給電壓範圍分別為從 -2.5至3.0 V 和 -0.5至0.5 V。

We have grown the high quality AlGaN/GaN heterostructure by plasma-assisted molecular beam epitaxy. We obtained the mobility of two-dimensional electron gas of the AlGaN/GaN is 9300 cm2/Vs and carrier concentration is 7.9×1012 cm-2 by conventional van der Pauw Hall measurement at 77K. The samples made of the AlGaN/GaN heterostructure were patterned to Hall bar geometry with a width of 20μm by conventional photolithography. After the photolithography, the nanowire was fabricated by the process of focus ion beam (FIB), and the widths of nanowire were reduced to 900 nm, 500 nm, 300 nm, 200nm, 100 nm, 80 nm and 50 nm respectively. The SiO2 layer and Al electrode were deposed on the samples to form nanowired MOSFETs. We have studied the leakage current measurement on the AlGaN/GaN nanowired MOSFETs at 300K. On the 100 nm and 200 nm width of nanowires, we did not observe the leakage current for the gate voltage work range from -2.5 to 3.0 V and from -0.5 to 0.5 V respectively.

中文摘要.......................................................................Ⅰ
英文摘要.......................................................................Ⅱ
第一章 簡介.................................................................. 1
第二章 實驗基本原理
2-1 霍爾效應........................................................ 4
2-2 快速熱退火原理............................................ 6
2-3 電子束蒸鍍原理............................................ 8
2-4 感應耦合式電漿蝕刻原理...........................10
2-5 多靶磁控濺鍍原理.......................................11
2-6 聚焦離子束原理...........................................14
第三章 實驗儀器與量測步驟
3-1 霍爾量測.......................................................17
3-1-1 量測儀器...............................................17
3-1-2 樣品製作...............................................19
3-1-3 數據量測...............................................21
3-1-4 數據計算...............................................22
3-2 MOS元件製程步驟......................................23
3-3 曝光微影製程步驟.......................................26
3-4 電子束蒸鍍...................................................30
3-5 感應耦合電漿蝕刻.......................................32
3-6 多靶磁控濺鍍...............................................34
3-7 漏電流之量測...............................................36
第四章 MOS元件製程分析與討論
4-1 實驗樣品.......................................................37
4-2 霍爾量測結果...............................................38
4-3 MOS元件的製程與討論..............................39
4-3-1 曝光微影製程.......................................39
4-3-2 Hall bar 結構製程................................41
4-3-3 氧化層SiO2製程..................................42
4-3-4 奈米線製作過程...................................44
4-3-5 金屬閘極製程.......................................47
4-4 MOSFET元件之漏電流量測.......................50
第五章 結論與未來展望
5-1 結論...............................................................55
5-2 未來展望.......................................................56
參考文獻......................................................................57

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