時間解析電激發光顯微術主要應用於光電元件及螢光材料上，在論文中我們使用它量測待測樣本的反應時間(response time)與相位變化(phase difference)，藉由信號產生器提供脈衝式電信號、共焦掃描顯微鏡的高空間解析度及鎖相放大器的鎖相特性，能夠達成量測待測樣本面上任意ㄧ點(mapping)的反應時間。另外，透過時間解析的特性，我們能夠應用同樣的量測方式求出發光二極體的遷移速度及載子於發光層上的傳輸變化。遷移率和影像的相位變化的觀測則需仰賴雷射切割技術拉長載子間的再結合距離，方可達成。

Time-resolved electroluminescence has been primarily and widely applied in the field of optoelectronic devices and phosphor materials. Here we use the method to measure the response time and phase difference of green light-emitting diode.
In our experiment, which is essentially dominated by pulsed signal from function generator、high spatial resolution from laser scanning microscopic and phase-lock characteristic from lock-in amplifier to complete our experimental result. We are capable to detect relative carrier information within any point or any surface region from epi-layer of green light-emitting diode.
Otherwise, the carrier transport of the sample is able to be observed through time-resolved characteristic measurement. Laser cutting would be beneficial for obvious phase-difference observation and mobility acquirement.

第一章 實驗導論 01
第二章 時間解析-電激發光原理
2.1 發光二極體-電激發光原理 03
2.2 電激發光-反應時間量測原理 04
2.3 電激發光-量測發光二極體反應時間原理 09
2.4 飛行時間式電荷傳導系統原理 010
2.5 雷射切割的緣起與應用 012
第三章 實驗架設與儀器介紹
3.1 樣本介紹 017
3.2 DC-EL暨Time-Resolved-EL實驗架構 018
3.3 共焦掃描顯微系統 020
3.4 低噪音前置放大器(Low-noise Preamplifier) 021
3.5 外接式光偵測器 021
3.6 鎖相放大器(Lock-in Amplifier) 022
第四章 實驗結果
4.1 DC-EL and Spectro-microscope 實驗 023
4.2 Time-Resolved EL 影像實驗 028
第一部份 029
第二部份 037
第三部份 045
第四部份 048
第五章 結論與分析
5.1 結論 052

第二章

[1] Joseph R. Lakowicz, “PRINCIPLES OF FLUORESCENCE SPECTROSCOPY”, 2nd edition kluwer academic/Plenum publishers chap. 4,5
[2]Lloyd Armstrong Jr., Serge Feneuille, “Theoretical analysis of the phase shift measurement of lifetimes using monochromatic light”, J.Phys. B:Atom. Molec. Phys., Vol.8, No. 4.1975
[3]Enrico Gratton, “Fluorescence lifetime imaging for the two-photon microscope : time-domain and frequency-domain”, Journal of Biochemical Optics 8(3),381-390, 2003
[4]Miin-Jang Chen, e “Carrier lifetime measurement on electroluminescence metal-oxide silicon” tunneling diodes applided physics letters, vol 79(14), 2001
[5]Joan Philip, Kjell Carlsson, “Theoretical investigation of the signal-to-noise ratio in fluorescence lifetime imaging” J. Opt. Soc. Am. A/Vol. 20,NO. 2/February 2003
[6]Jonnie Lee, “影像暨共焦回饋式雷射雕刻系統專利申請內容說明書”, Institute of Bio-Photonics, National Yang-Ming University,Bio, 2007
[7]G. Ottaviani, L.Reggiani, C.Canali, F.Nava, and A.Alberigi-Quaranta, “Hole drift velocity in Silicon”, PHYSICAL REVIEW B, Vol.12,No.8, P3318-3329 (1975)
[8] G. Ottaviani, L.Reggiani, C.Canali, F.Nava, and A.Alberigi-Quaranta, “Hole drift velocity in Silicon”, PHYSICAL REVIEW B, Vol.12,No.4, P2265-2284 (1975)

第四章

[1] Jiangshan Chen and Dongge Ma, “Effect of dye concentration on the charge carrier transport in molecularly doped organic light-Emitting diodes”, Changchun Institute of applied Chemistry, 2004
[2] Michael E.Levinshtein, Sergey L.Rumyantsev, Michael S.Shur,
“Properties of advanced semiconductor materials GaN, AlN, InN, BN, SiC, SiGe”
[5] 翁鵬翔, “應用時間解析之電激發光及光致電流顯微術於光電元件”, 中山大學光電工程研究所, 2005
[6] 廖育麒, “時間解析之光致電流顯微術”, 中山大學光電工程研究所, 2006
[2] YOSUKE MORITA and KOICHI WAKITA, “Response Speed and Optical Investigation of InGaN/GaN Multiple Quantum Well
Light-Emitting Diodes (LED)”, Electrical Engineering in Japan, Vol. 137, No. 3, Chubu University, Japan, 2001
[8] C. B. Norris and J. F. Gibbons, “Measure of High-Field Carrier Drift Velocities in Silicon by Time-of-Flight Technique”, IEEE Transactions on electron devices, Vol. ED-14, No.1, P38-43 (1967)
[9] Ricardo Borges, “GaN High Electron Mobility Transistors(HEMT)”, Nitronex Corporation

第五章

[1] Ricardo Borges, “GaN High Electron Mobility Transistors(HEMT)”, Nitronex Corporation
[2] YOSUKE MORITA and KOICHI WAKITA, “Response Speed and Optical Investigation of InGaN/GaN Multiple Quantum Well
Light-Emitting Diodes (LED)”, Electrical Engineering in Japan, Vol. 137, No. 3, Chubu University, Japan, 2001
[3] 章凱杰, “Cool ! TINA PRO 電路模擬與分析”, Edition B122, 2001
[4] Joseph R. Lakowicz, “PRINCIPLES OF FLUORESCENCE SPECTROSCOPY”, 2nd edition kluwer academic/Plenum publishers chap. 4,5
[5] R. Gaska, J. W. Yang, A. Osinsky, Q. Chen, and M. Asif Khan, “Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates”, APA Optics, Inc., Blaine, Minnesota 55449, 1998
[6] http://www.adsdyes.com/oled.htm