本論文是以成長Al/ZnO:Al(AZO)/ ZnSe /CuInSe2:Sb /Mo/sodalime
glass(SLG)為結構之太陽能電池為目標。在CuInSe2 中特別摻入
Sb 可增加表面形貌的平坦化，有助於元件的成長。使用ZnSe 取代
CdS 作為緩衝層，可減低對於環境的污染。
調降氬氣壓力成長雙層結構之鉬薄膜擁有低應力與低阻抗的特
性。目前，鉬薄膜之張應力維持在100 MPa 以下，片電阻可達0.205(Ω
/□)為最佳值。在濺鍍(AZO)薄膜方面，改變濺鍍距離為5 公分，有
效地降低電阻率至1.73×10-3 (Ω-cm)，並且在可見光波段內皆有80
﹪以上之透光率。引進黃光微影技術，濺鍍Al 金屬電極，以改善
Al/ AZO 之間的歐姆接觸電阻。
成長以Al/AZO/ ZnSe /CuInSe2 /Mo/SLG 為結構之元件，在模模
擬光源(AM1.5，100mW/cm2)照射下，其轉換效率為4.4 ﹪(Voc =0.41
V，I sc = 3.9 mA ，FF = 69 ﹪)。摻入Sb 之CuInSe2 為結構之元件，
轉換效率可提昇至6.0﹪(Voc =0.43 V，I sc = 5.15 mA ，FF = 68
﹪) 。本研究顯示出摻入Sb 之CuInSe2 薄膜為結構之元件，可以有
效增加元件的短路電流。

We attempted to fabricate the CuInSe2:Sb thin-film solar cells with a Al/ZnO:Al(AZO)/ ZnSe /CuInSe2:Sb /Mo/soda-lime glass(SLG) structure. The growth of CuInSe2 film in the presence of Sb can effectively improve the surface morphology and benefit the growth of the device. A ZnSe buffer layer has been applied as an attractive alternative to a CdS buffer layer, thus eliminating environment from pollution.
By varying the Ar pressure during the deposition, the Mo bilayer has been fabricated with both low resistivity and good adhesion. Currently the tensile stress was maintained below 100MPa, and the lowest sheet resistance achieved 0.205(Ω/□). The fabrication condition with a 5-cm sputtering distance could provide the lowest resistivity of 1.73×10-3 (Ω-cm) in the AZO thin-film that shows a transmittance of above 80﹪in the visible range. Applying the technology of optical lithography to deposit the Al metal front grid, the Al/ AZO ohmic contact resistance was improved.
The energy conversion efficiency of the CIS thin-film solar cell (Al/ AZO/ ZnSe /CuInSe2 /Mo/ SLG) was 4.4﹪(Voc =0.41 V，I sc = 3.9 mA ，FF = 69 ﹪) by applying the irradiation with a solar simulator under one-sun (AM1.5, 100mW/cm2) conditions. However, the efficiency of CIS:Sb solar cell (Al/ AZO/ ZnSe /CuInSe2 :Sb /Mo/ SLG) was improved to to 6.0﹪(Voc =0.43 V，I sc = 5.15 mA ，FF = 68 ﹪). This result indicates that the CIS film growth with Sb can increase the short-circuit current.

第一章 簡介 1
1.1 前言 1
1.2 太陽能電池之歷史背景與研究發展概況 2
1.3 CuInSe2複晶薄膜性質 5
1.4 元件設計分析與探討 8
1.4.1 元件結構設計 8
1.4.2 各層薄膜之特性 9
1.5研究目的 14
第二章 實驗原理、步驟與分析儀器 15
2.1　熱蒸鍍之原理與系統 15
2.2 磁控濺鍍之原理與系統 18
2-3　實驗步驟 20
2-3-1　鈉玻璃基板 20
2-3-2　鉬背電極成長 20
2-3-3　P-type CuInSe2:Sb主吸收層薄膜成長 21
2-4-4　ZnSe緩衝層成長 23
2-4-5 AZO透光層成長 24
2-4-6 Al金屬電極成長 25
2-4-7 元件製作流程圖 27
2.4 薄膜特性分析方法與儀器 28
2.4.1 熱探針量測(Hot probe) 28
2.4.2 四點探針(Four-point probe) 29
2.4.3 霍爾量測(Hall measurement) 30
2.4.4 X光繞射儀(X-ray diffraction) 30
2.4.5 掃描式電子顯微鏡(SEM) 31
2.4.6 吸收光譜儀(Spectrophotometer) 31
2.4.7 反射光譜儀(Spectral reflectance measurement) 32
2.4.8 電流-電壓特性曲線量測(I-V measurement) 32
第三章 實驗結果與討論 33
3.1 MO金屬電極之鍍製 33
3.1.1腔體氬氣壓力對薄膜應力之影響 33
3.1.2腔體氬氣壓力對薄膜片電阻之影響 35
3.1.3 電漿濺鍍鉬金屬之雙層結構(Bi-layer structure) 37
3.2 CuInSe2:Sb主吸收層之鍍製 39
3.2.1 XRD 結構分析 39
3.2.2 吸收光譜儀分析 40
3.2.3 SEM表面形貌分析 41
3.2.4 導電性量測 41
3.3 ZnSe緩衝層之鍍製 43
3.3.1 成長時間對ZnSe 薄膜之影響 43
3.3.2 基板溫度對ZnSe 薄膜之影響 45
3.4 AZO透光層之鍍製 47
3.4.1濺鍍距離對AZO 薄膜之影響 47
3.4.2腔體氬氣壓力對AZO薄膜之影響 51
3.4.3電性量測之比較 54
3.4.4改變濺鍍距離與氬氣壓力之實驗參數比較 54
3.5 元件之製作與轉換效率量測 56
3.5.1 元件轉換效率之基本參數 56
3.5.2 電流-電壓特性曲線量測 57
第四章 結論 62
參考文獻 63

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