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博碩士論文 etd-0717107-211625 詳細資訊
Title page for etd-0717107-211625
論文名稱
Title
M 面氮化鎵之成長與陰極發光研究
M plane GaN film growth by PAMBE and CL study
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
68
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2007-06-29
繳交日期
Date of Submission
2007-07-17
關鍵字
Keywords
鋁酸鋰、陰極發光、氮化鎵、分子束磊晶
GaN, LiAlO2, molecular beam epitaxy, cathodo-luminescence
統計
Statistics
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中文摘要
本文是針對非極化之氮化鎵( non-polar GaN )以電漿輔助分子
束磊晶( plasma-assisted molecular beam epitaxy, PAMBE )成長,
並且以掃描式電子顯微鏡(SEM)、陰極發光(CL)、電子背向散射繞射
(EBSD)、XRD 以及反射式高能電子繞射(RHEED),對所成長之樣品針
對磊晶品質進行表面及光學量測。本實驗最主要的目的, 希望能在
鋁酸鋰基板( LiAlO2, LAO )上成長出高品質的非極性之氮化鎵薄膜,
因此,針對磊晶溫度以及五族與三族元素的比值加以改變,而達到我
們的目標。在陰極發光實驗量測中,我們藉由改變入射電子束的加速
電壓以及電流,研究陰極發光譜峰值、強度、和峰值半高寬
( full-width-at-half -maximum, FWHM )的變化加以分析探討。
Abstract
Gamma-phase lithium aluminate (LiAlO2) single crystal is
grown by Czochralski pulling method and a-plane LiAlO2(LAO) is
chosen as the substrate for subsequent gallium nitride (GaN)
epitaxial growth by plasma-assisted molecular beam epitaxy
(PAMBE). The lattice mismatch between the nitride and the
substrate is greatly reduced due to small lattice mismatch
of~0.3% between [0001]GaN and [010]LAO and of~1.7% between
[11-20]GaN and [001]LAO in the plane of the substrate LAO(100).
Pure hexagonal [10-10]GaN is successfully grown directly
on the LAO substrate without buffer layer. Crystal quality and
properties are analyzed through a series of measurements,
including reflection high-energy electron diffraction (RHEED),
field-emission electron microscopy (FESEM), electron backscatter
diffraction (EBSD), x-ray diffraction and cathodo
luminescence (CL).
目次 Table of Contents
英文摘要1
中文摘要2
第一章序論
1-1 引言5
1-2 鋁酸鋰基板簡介8
第二章量測系統與原理介紹
2-1 X-ray 繞射11
2-2 掃瞄式電子顯微鏡13
2-3 陰極發光18
2-4 電子背向散射繞射21
2-5 反射式高能電子繞射儀25
第三章樣品成長與製備
3-1 分子束磊晶系統及原理26
3-2 樣品製備28
3-3 磊晶程序29
3-4 樣品生長參數與結構32
第四章實驗結果與討論
4-1 反射式高能電子繞射儀33
4-2 掃瞄式電子顯微鏡39
4-3 電子背向散射繞射41
4-4 X-ray 繞射45
4-5 陰極發光49
第五章結論66
Reference 67
參考文獻 References
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[2] P.Waltereit et al, Journal of Crystal Growth 218 (2000) 143.
[3] Y. Dikme, M. Fieger, F. Jessen, A. Szymakowski et al, Phys. Stat. Sol.
C 7 (2003) 2385.
[4] I. Ahmad, M. Holtz, N. N. Faleev, H. Temkin, J. Appl. Phys. 95 (2004)
1692.
[5] N. D. Bassim, M. E. Twigg, C. R. Eddy, Jr., J. C. Culbertson, M. A.
Mastro, R. L. Henry, and R. T. Holm et al, Appl. Phys. Lett. 86 (2005)
021902.
[6] S. Einfeldt, Z.J. Reitmeier, R.F. Davis, Journal of Crystal Growth 253
(2003) 129.
[7] H. C. Jeon, H. S. Lee, S. M. Si, Y. S. Jeong, J. H. Na, Y. S. Park, T.
W. Kang, Jae Eung Oh, Current Appl. Phys. 3 (2003) 385.
[8] K. Lee, K. Auh, MRS Internet J. Nitride Semicond. Res. 6 (2001) 9.
[9] P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger,
M. Ramsteiner, M. Reiche, K. H. Ploog, Nature 406 (2000) 865.
[10] Y. J. Sun, O. Brandt., K. H. Ploog, J. vac. Sci. Technol. B, 21 (2003)
1350
[11] M. Dabrowska-Szata, Materials Chemistry and Phys, 81 (2003) 257
[12] Reflection high-energy electron diffraction and reflection electron
imaging of surfaces by P.K. Larsen and P.J. Dobson (1987)
[13] Applied RHEED : reflection high-energy electron diffraction during
crystal growth byWolfgang Braun (1999)
[14] Materials Analysis by 汪建民(1998)
[15] K. Knobloch, P. Perlin, J. Krueger, E. R.Weber, C. Kisielowsi, MRS
internet J. Nitride Semicond. Res. 3, 4 (1998)
[16] X. Li and J. J. Coleman, Appl. Phys. Lett. 70 (1997) 438
[17] O. Gelfhausen, M. R. Phillips and M. Toth, J. Appl. Phys. 89 (2001)
3535
[18] S. O. Kucheyev, M. Toth, M. R. Phillips, J. S.Williams, C. Jagadish,
Appl. Phys. Lett. 79 (2001) 2154.
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