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論文名稱 Title |
M 面氮化鎵之成長與陰極發光研究 M plane GaN film growth by PAMBE and CL study |
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系所名稱 Department |
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畢業學年期 Year, semester |
語文別 Language |
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學位類別 Degree |
頁數 Number of pages |
68 |
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研究生 Author |
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指導教授 Advisor |
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召集委員 Convenor |
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口試委員 Advisory Committee |
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口試日期 Date of Exam |
2007-06-29 |
繳交日期 Date of Submission |
2007-07-17 |
關鍵字 Keywords |
鋁酸鋰、陰極發光、氮化鎵、分子束磊晶 GaN, LiAlO2, molecular beam epitaxy, cathodo-luminescence |
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統計 Statistics |
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中文摘要 |
本文是針對非極化之氮化鎵( non-polar GaN )以電漿輔助分子 束磊晶( plasma-assisted molecular beam epitaxy, PAMBE )成長, 並且以掃描式電子顯微鏡(SEM)、陰極發光(CL)、電子背向散射繞射 (EBSD)、XRD 以及反射式高能電子繞射(RHEED),對所成長之樣品針 對磊晶品質進行表面及光學量測。本實驗最主要的目的, 希望能在 鋁酸鋰基板( LiAlO2, LAO )上成長出高品質的非極性之氮化鎵薄膜, 因此,針對磊晶溫度以及五族與三族元素的比值加以改變,而達到我 們的目標。在陰極發光實驗量測中,我們藉由改變入射電子束的加速 電壓以及電流,研究陰極發光譜峰值、強度、和峰值半高寬 ( full-width-at-half -maximum, FWHM )的變化加以分析探討。 |
Abstract |
Gamma-phase lithium aluminate (LiAlO2) single crystal is grown by Czochralski pulling method and a-plane LiAlO2(LAO) is chosen as the substrate for subsequent gallium nitride (GaN) epitaxial growth by plasma-assisted molecular beam epitaxy (PAMBE). The lattice mismatch between the nitride and the substrate is greatly reduced due to small lattice mismatch of~0.3% between [0001]GaN and [010]LAO and of~1.7% between [11-20]GaN and [001]LAO in the plane of the substrate LAO(100). Pure hexagonal [10-10]GaN is successfully grown directly on the LAO substrate without buffer layer. Crystal quality and properties are analyzed through a series of measurements, including reflection high-energy electron diffraction (RHEED), field-emission electron microscopy (FESEM), electron backscatter diffraction (EBSD), x-ray diffraction and cathodo luminescence (CL). |
目次 Table of Contents |
英文摘要1 中文摘要2 第一章序論 1-1 引言5 1-2 鋁酸鋰基板簡介8 第二章量測系統與原理介紹 2-1 X-ray 繞射11 2-2 掃瞄式電子顯微鏡13 2-3 陰極發光18 2-4 電子背向散射繞射21 2-5 反射式高能電子繞射儀25 第三章樣品成長與製備 3-1 分子束磊晶系統及原理26 3-2 樣品製備28 3-3 磊晶程序29 3-4 樣品生長參數與結構32 第四章實驗結果與討論 4-1 反射式高能電子繞射儀33 4-2 掃瞄式電子顯微鏡39 4-3 電子背向散射繞射41 4-4 X-ray 繞射45 4-5 陰極發光49 第五章結論66 Reference 67 |
參考文獻 References |
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