在本篇論文中，主要是研究半導體彎曲波導損耗以及量子點光放大器的工作特性。在彎曲波導的材料方面，我們使用基板為InP，且由分子束磊晶成長的 InGaAlAs /InAlAs 量子井結構磊晶片(λ =1.41μm)，成功的製作出彎曲波導樣品。量子點光放大器使用對稱型結構 InGaAs 的多重量子點結構磊晶片(λ =1.24μm)。在量測系統架設方面，各種量測儀器皆和電腦完整的連接，並控制其自動化，以達更準確的量測結果。
彎曲波導的設計方面，我們設計一系列曲率半徑不同的波導，分別為60μm、80μm、110μm、170μm、260μm，並且利用Fabry-Perot resonant的方式，量測並計算出彎曲波導的損耗。我們發現當彎曲波導曲率半徑為260μm且含有外圍深蝕刻製程時，其損耗大小已和直線損耗相當。
我們設計單模波導與寬面積波導的量子點光放大器以探討其複合情形，單模波導中以腔長較長的複合發光效果較佳(C311 腔長4000μm 0.00066μW*A/cm¬2)，寬面積波導又比單模波導的複合效果佳(C311波導寬度150μm、長度2500μm 0.0966μW*A/cm¬2)。在對訊號放大增益部分，C311單模波導(發光波長1211nm、入射光訊號1260nm)可得到3.56dB的增益，C374單模波導(發光波長1255nm、入射光訊號1260nm)可得到6.1dB的增益。

In this thesis, it mainly studies the performance characteristics of the bending losses in semiconductor waveguides and the quantum dots semiconductor optical amplifier. We used InP-subtract and InGaAlAs /InAlAs multiple quantum wells epitaxial wafer grown by MBE as our material(λg=1.41μm). We had successfully fabricated a series of bending strip-loaded waveguides. On the quantum dots semiconductor optical amplifier, symmetric InGaAlAs/GaAs quantum well structure is used to fabricate the optical waveguide. We have established an automatic optical measurement system to measure the device characteristics more accurately.
Design respect of bending waveguide, we design a series of radius, is 60μm, 80μm, 110μm, 170μm,and 260μm respectively, and utilize Fabry-Perot resonant, measurement and estimate the loss of bending waveguide in quantity. We find the bending waveguide loss as radius for 260μm and contain deeply etching process was quite equal to straight waveguide loss.
On the quantum dots semiconductor optical amplifier, we design a single mode waveguide and a broad area waveguide to compare the difference of their electron-hole combination situation. A single mode waveguide with longer cavity length had better combination situation than shorter (C311 of cavity length 4000μm ,0.00066μW *A/cm2). And the broad area waveguide had more better combination situation to single mode waveguide (C311 of cavity width 150μm, length 4000μm , 0.0966μW *A/cm2). For the gain to the pump signal, C311 singe mode waveguide (emission peak:1211nm,pump signal:1260nm) could get a gain about 3.56dB；and C374 singe mode waveguide (emission peak:1255nm,pump signal:1260nm) could get a gain about 6.1dB.

第一章 簡介…………………………………………………...…..…...1
1-1前言…………………….…………………………………….....1
1-2半導體彎曲波導……………......................................................2
1-3半導體量子點光放大器……………………………...………...2
1-4論文架構………………………….…………………………….4
第二章 元件基本原理……………………...……..……….…….…5
2-1半導體彎曲波導損耗理論模型……...………….………….….5
2-1-1有效折射率法 (effective index method)….…..…….….5
2-1-2 Marcuse 彎曲波導損耗方程式…..………..…………….....7
2-2半導體量子點光放大器……….…………............................….8
2-2-1量子點材料……………………………………..…………….8
2-2-2半導體光放大器工作原理…………………………………...8
2-2-3光放大器的增益…………………………………………….10
2-2-4增益飽和…………………………………………………….12
2-2-5光放大器雜訊……………………………………………….13
2-2-6溫度穩定性………………………………………………….15
第三章 元件設計介紹………………...….………………......…16
3-1 彎曲波導蝕刻深度設計.............……………………….…...16
3-2 彎曲波導結構設計與損耗估算….…………………..…......18
3-3 彎曲波導外圍漸變深蝕刻....……………………….............19
3-4 半導體量子點光放大器設計……………….........................21

第四章 量測方法與系統介紹……………….……….…...……..24
4-1 量測系統介紹及驗證……………………………………….24
4-2 耦合機制……………….……………………………………26
4-3 Fabry-Perot resonance method量測介紹…………………...27
4-3-1 Fabry-Perot 干涉現象……………….…………………27
4-3-2 Fabry-Perot resonance 損耗量測……………….………28
4-4 Hakki-Paoli method量測方法介紹…...…………………….29
4-5 透明電流量測介紹……….....………………………...…….30
第五章 元件量測與討論…………………….………….…...…32
5-1 半導體彎曲波導特性量測結果.............................................32
5-2 量子點光放大器特性量測結果........... ........... ........... .........36
第六章 結論…………………………………….…...………48

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