使用LED的目地是為了要使用其電致發光的效果，本實驗利用時間解析的方式來量測LED發光的反應時間，再加上一般二極體的空乏區都有光致電流的特性，就可以在同一顆LED上做兩種不同實驗的特性比較。兩種不同的實驗利用相似的實驗架構，雷射共焦掃描顯微鏡、脈衝雷射、高頻訊號產生器和RF Lock-in Amplifier等儀器就可以達到本實的目地，也就是在相同的樣品可以量測出不同的物理特性的反應時間。

The major purpose of LED is the electroluminescence. We use the time-resolved electroluminescence (TR-EL) method to measure the response time of LED in our experiments. In addition, typical diode has optical beam induced current (OBIC) characteristic in its depletion region. Combining upon physical reaction we can compare TR-EL and OBIC in the same LED. We are using the high frequency function generator, pulsed laser with high repetition rate, laser scanning confocal microscopy and a high frequency phase sensitive lock-in loop to achieve temporal resolution. The response time of LED can be measured in two different physical characteristic.

第一章 導論 01
第二章 樣品準備與實驗架設
2.1 樣品介紹 02
2.2 DC-EL暨Time-Resolved EL實驗架設 05
第三章 實驗結果
3.1 DC-EL and Spectro-microscope實驗 06
3.2 Time-Resolved EL 影像實驗 10
3.2.1 單一晶粒改變驅動頻率TR-EL 影像實驗 10
3.2.2相同晶粒TR-EL與AC OBIC 影像實驗 17
第四章 結論與分析比較
4.1 概要 27
4.2 時間延遲結果與比較 28
4.3 頻率變化下強度比較 31
4.4 結論 32
附錄A時間解析電致發光原理
A.1 發光二極體的原理 34
A.2電激發光-反應時間量測原理 35
A.3 電激發光-量測LED反應時間原理 39
A.4 飛行時間式電荷傳導系統原理 40
附錄B 實驗儀器介紹
B.1共焦顯微掃瞄系統 42
B.2低噪音前置放大器(Low-noise Preamplifier) 43
B.3外接式光偵測器 44
B.4鎖相放大器(Lock-in Amplifier) 46
B.5 光譜儀 47
B.6 光譜儀實驗架設 48
B.7 AC OBIC 實驗架設 49

第三章
[1] Jiangshan Chen and Dongge Ma, “Effect of dye concentration on the charge carrier transport in molecularly doped organic light-Emitting diodes”, Changchun Institute of applied Chemistry, 2004
[2] Michael E.Levinshtein, Sergey L.Rumyantsev, Michael S.Shur, “Properties of advanced semiconductor materials GaN, AlN, InN, BN, SiC, SiGe”
[3] 翁鵬翔, “應用時間解析之電激發光及光致電流顯微術於光電元件”, 中山大學光電工程研究所, 2005
[4] 廖育麒, “時間解析之光致電流顯微術”, 中山大學光電工程研究所, 2006
[5] YOSUKE MORITA and KOICHI WAKITA, “Response Speed and Optical Investigation of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes (LED)”, Electrical Engineering in Japan, Vol. 137, No. 3, Chubu University, Japan, 2001
[6] Ricardo Borges, “GaN High Electron Mobility Transistors(HEMT)”, Nitronex Corporation
第四章
[1] Yu-Fong Lin and Fu-Jen Kao, ”Time-resolved optical beam induced current mapping in P-GaN light emitting device” Optics and Photonics Taiwan, 2007
[2] Wada, H. Sasaki, H. Kamijoh, T. “InP light emitting diodes on Si substrates integrated withback-surface diffractive lenses” Indium Phosphide and Related Materials, 1998 International Conference on
[3] Chris Xu and Winfried Denk, “Two-photon optical beam induced current imaging through the backside of integrated circuits” Applied Physics Letters, 1997
[4] F. -J. Kao, M. -K. Huang, Y. -S. Wang, S. -L. Huang, M. -K. Lee, and C. -K. Sun, "Two-photon optical-beam-induced current imaging of indium gallium nitride blue light-emitting diodes," Opt. Lett. 24, 1407-1409, 1999
[5]Fu-Jen Kao, Jian-Cheng Chen, Sheng-Chih Shih, Alan Wei, Sheng-Lung Huang, Tzyy-Sheng Horng and Peter Török, “Optical beam induced current microscopy at DC and radio frequency” Optics Communications, Volume 211, Issues 1-6, 1 October 2002, Pages 39-45
[6] S. L. Chuang, Physics of Optoelectronic Devices, Wiley-Interscience, 1995
附錄A
[1] Joseph R. Lakowicz, “PRINCIPLES OF FLUORESCENCE SPECTROSCOPY”, 2nd edition kluwer academic/Plenum publishers chap. 4,5
[2] Lloyd Armstrong Jr., Serge Feneuille, “Theoretical analysis of the phase shift measurement of lifetimes using monochromatic light”, J.Phys. B:Atom. Molec. Phys., Vol.8, No. 4.1975
[3] Enrico Gratton, “Fluorescence lifetime imaging for the two-photon microscope : time-domain and frequency-domain”, Journal of Biochemical Optics 8(3),381-390, 2003
[4] Miin-Jang Chen, e “Carrier lifetime measurement on electroluminescence metal-oxide silicon” tunneling diodes applided physics letters, vol 79(14), 2001
[5] Joan Philip, Kjell Carlsson, “Theoretical investigation of the signal-to-noise ratio in fluorescence lifetime imaging” J. Opt. Soc. Am. A/Vol. 20,NO. 2/February 2003
[6] G. Ottaviani, L.Reggiani, C.Canali, F.Nava, and A.Alberigi-Quaranta, “Hole drift velocity in Silicon”, PHYSICAL REVIEW B, Vol.12,No.8, P3318-3329 (1975)
[7] G. Ottaviani, L.Reggiani, C.Canali, F.Nava, and A.Alberigi-Quaranta, “Hole drift velocity in Silicon”, PHYSICAL REVIEW B, Vol.12,No.4, P2265-2284 (1975)