本論文主旨在利用電子束微影術，完成二次定位系統以及二維光子晶體微共振腔之研製。我們實驗室電子束微影系統，可成功定義出各種陣列圖案，可寫最小線寬為55奈米，可寫最大範圍為250μm × 250μm。並於分子束磊晶成長的InGaAs/InAlAs InP磊晶片上，利用電子束微影術製作二次定位系統與二微光子晶體微共振腔。

在二次定位系統方面，首先先設定一中心，依序在Ｘ軸與Ｙ軸方向繪製多個長 1μm，寬10μm的長方形，每個長方形圖案的間隔為1μm，以此當作定位圖形的尺規。最後在此尺規上方再繪製一長為250μm，寬為10μm的大長方形，以便在作二次定位時做角度的校正。
完成後的定位系統其誤差不會超過正負20nm。

在二維光子晶體微共振腔方面，設計TE極化不存在的光子能隙，結構為三角晶格排列之空氣圓柱。圓柱半徑為460nm，晶格常數為1150 nm，能帶範圍1535~1635 nm。並以此設計了具有單一點小缺陷之光子晶體，其缺陷態為1560.3 nm~1581.8 nm和1622 nm~1635 nm與有眾多缺陷態的大缺陷光子晶體。製程上，以電子束微影定義出我們設計的圖形後，利用金屬掀離做出蝕刻遮罩，配合乾式蝕刻技術將圖形轉移至底下的介電質層與磊晶層，完成二維光子晶體。
由量測結果中可得知，我們所設計的單一小缺陷與大缺陷光子晶體微共振腔，其發光波長皆在1622 nm ，Q值為324，且其發光波長符合缺陷模態能帶範圍。而唯一不同的是，大缺陷光子晶體與小缺陷光子晶體在相同電流時，前者的訊號強度會比後者的訊號大了快接近7倍。

In this thesis, we use E-Beam lithography to finish the process of positioning system and 2D photonic crystal. We use the new E-Beam system to define some array patterns. By this test, we obtain the minimum linewidth is 55nm, and the maximum writable range is 250μm*250μm.
First, we fabricated the 2D photonic crystal microcavity and positioning system on the InGaAs/InAlAs which grown by molecular beam epitaxy (MBE) on InP substrate at 1564nm emission wavelength by E-beam lithography.
For the positioning system, we set up a origin point first. And then we design many rectangles whose length is 1μm, width is 10μm and gap is 1μm along X axis and Y axis from the origin point. All of the patterns are regarded as the ruler. Finally, we design a big rectangle whose length is 250μm and width is 10μm to adjust the positioning angle above the ruler. The maximum error of the positioning system is 20nm.

For the 2D photonic crystal (2D PhC) microcavity, a triangular array of air columns is adopted. The lattice constant and air columns radius are 1150nm and 460nm, respectively. The TE modes photonic band gap of this structure are corresponding to wavelength range in 1535nm~1635nm. We remove signal defect and seven defects in the 2D PhC to form 2D PhC microcavities and the PhC microcavities have many defect modes. The Micro-PL measurement shows when the etching depth was deep enough, the PhC microcavities which have 1-defect and 7-defect appeared defect mode at 1622nm (a/λ=0.74) both. The intensity of 7-defect PhC is 7 times than 1-defect PhC. Both of them cooperate with our simulation and design. And the maximum Q value is about 324 at the defect mode.

第一章 緒論.......................................................................1
1-1 電子束微影簡介...................................................1
1-2 光子晶體簡介.......................................................2
1-3 二次定位系統.......................................................6
1-4 一維光子晶體.......................................................6
1-5 二維光子晶體.......................................................7
1-6 論文架構...............................................................7

第二章 二次定位系統與DBR雷射元件設計...................8
2-1 磊晶片結構............................................................8
2-2 二次定位系統設計..............................................10
2-3 DBR雷射元件模擬.............................................15
2-4 DBR雷射元件設計.............................................20

第三章 二維光子晶體元件設計與模擬.........................21
3-1 二維光子晶體元件模擬......................................21
3-2 二維光子晶體元件設計......................................35

第四章 二次定位系統與DBR雷射製成示意圖............37
4-1 儀器架構.............................................................37
4-2 二次定位系統與DBR雷射製成示意圖............38
4-3 製成步驟及實驗結果.........................................40

第五章 二維光子晶體元件製成....................................50
5-1 二維光子晶體製成示意圖.................................50
5-2 製成步驟與實驗結果.........................................52

第六章 量測結果..............................................................61

第七章 結論......................................................................68

參考文獻 ..........................................................................71

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