本論文主要在研究非對稱多重量子點結構寬波段發光特性，樣品主要來源為是實驗室以分子束磊晶(MBE)機台成長一系列厚度、結構不同以及在主動層位置處加入p型調變摻雜的非對稱多重量子點p-i-n雷射結構。
在實驗上我們主要是利用電致螢光(Electroluminescence EL)量測系統外加給樣品激發電流，使激發出螢光，用來探討這些樣品的光譜形狀、強度以及頻譜分布情形，並且探討在相似結構底下以及不同摻雜條件下每個樣品的躍遷機制。也利用光電流光譜圖、電致吸收系統之吸收變化光譜圖和折射率變化光譜圖加以分析比對。
實驗上我們先以樣品C240為主，其結構主要為三層成分不同的單層量子點結構所形成，分別為In0.64Ga0.36As、In0.75Ga0.25As以及 InAs，此時我們發現其發光強度很小，且半高寬為108nm；當我們將量子點層數增加為兩倍時，發現半高寬變為134nm；接著我們在每層量子點底下多長一層2nm的InGaAs量子井時，半高寬增加到156nm；最後當我們在量子井中加入p型摻雜，發現其強度不但明顯增強，發光波長也由1.18μm到1.36μm，其半高寬達196nm。因此我們發現量子點的強度和半高寬主要和量子點層數的不同及是否摻雜有關，此外也可發現當我們在量子點底下多長上一層量子井時，可大量提升半高寬。
最後期望可以利用我們所設計出非對稱多重量子點結構的寬頻帶特性，來製作寬頻的可調變雷射和寬頻帶的半導體光放大器，以應用在未來光通訊網路系統架構中。

The thesis focuses on the broadband characteristic of asymmetric multiple quantum dots . The main sources of the samples are grown from our laboratory. We used molecular beam epitaxy to grow a series samples with different thickness and structures. We also add p type modulation doping in the active layer in asymmetric multiple quantum dots p-i-n laser structures.
In our experiment, we use the electroluminescence measurement system to measure the optical signals by adding a forward bias. Then we discuss the spectrum shape, emission intensity, and peak distribution. We also analysis the jump migration between these similar samples. Besides, we use the photo current spectrum, differential absorption coefficient spectrum, and differential refractive coefficient spectrum to analysis the signals.
We use sample C240 as our main structure. It organized by three different quantum dots ingredients: In0.64Ga0.36As, In0.75Ga0.25As, and InAs. We find that we get the intensity in C240 is very weak, and the FWMH is 108nm. When we add the quantum dots layer double, we find that the FWHM become 134nm. And then, when we grow 2nm InGaAs quantum well behind the quantum dots structures, the FWMH increases to 156nm. Finally, when we add p type modulation into quantum well, we find the intensity has increased a lot, and the emission wavelength is from 1.18μm to 1.36μm. It is about 196nm. By the conclusion, we can find that the emission intensity and FWMH is relative to the different quantum dots layers and doping, we also find that by increasing one quantum layer, we can get the higher FWMH.
Finally, we expect that we can use our broadband characteristic of the AMQDs samples to produce broadly tunable laser and broad-band semiconductor optical amplifier in the future.

第一章 緒論 1
1-1 前言 1
1-2 內容架構 2
第二章 實驗樣品介紹 3
2-1 InGaAs/InGaAs單層量子點結構 3
2-2 InAs寬波段量子點結構 5
第三章 實驗方法與製程步驟 9
3-1 光激螢光量測 9
3-2 電致螢光量測 11
3-3 光電流量測 13
3-4 電制吸收量測 14
3-5 量測元件mesa製程步驟 17
第四章 實驗結果與分析 26
4-1 InGaAs/InGaAs單層量子點結構之分析 26
4-2 寬波段量子點結構之分析 30
第五章 結論 57
參考文獻 58

[1] Y.C.Wang, S.L,Tyan. and Y.D.Juang “Photoreflectance and photoluminescence spectroscopy of the lattice-matched InGaAs/InAlAs single quantum well.” J. Appl. phys. Vol 92, number 2 (2002)
[2] Kazuhisa Uomi, Tomoyoshi Mishima and Naoki Chinone, “Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers.Ⅰ. Theory.” Jan. J. Appl. Phys. 29, pp. 81-87 (1990)
[3] Ching-Fuh Lin and Bing-Ruey Wu, “Sequence influence of nonidentical InGaAsP quantum wells on broadband characteristics of semiconductor optical amplifiers-superluminescent diodes.” Optics Letters Vol. 26, No. 14 (2001)
[4] Ching-Fuh Lin, Yi-Shin Su, and Bing-Ruey Wu, “External-Cavity Semiconductor Laser Tunable From 1.3 to 1.54μm for Optical Communication.” IEEE Photon. Technol. Lett. 14, pp.3-5(2002)
[5] Xiang Zhu, Daniel T. Cassidy, Michael J. Hamp, D. A. Thompson, B. J. Robinson, Q, C, Zhao, and M. Davies, “1.4-μm InGaAsP-InP Strained Multiple-Quantum-Well Laser for Broad-Wavelength Tunability.” IEEE Photon. Technol. Lett. 9, pp. 1202-1204(1997)
[6] Kazuhisa Uomi, Tomoyoshi Mishima and Naoki Chinone, “Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers.Ⅱ. Theory.” Jan. J. Appl. Phys. 29, pp. 88-94 (1990)
[7] 梁家輔 ”非對稱多重量子井結構之光學特性研究” 國立中山大學光電工程研究所，2006
[8] 丁紀仁 “以光調制反射光譜探測半導體內建電場及調制場效應研究” 國立中山大學光電工程研究所，2005
[9] 龔國閔 “氮砷化銦鎵半導體光放大器及量子井混合之研製” 國立中山大學光電工程研究所，2004
[10] 沈柏平 “氮砷化銦鎵半導體量子井光譜之研究” 國立中山大學光電工程研究所，2003