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博碩士論文 etd-0717108-220842 詳細資訊
Title page for etd-0717108-220842
論文名稱
Title
時間解析光致電流應用在InGaN 發光二極體
Time-resolved optical beam induced current mapping in InGaN LED
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
60
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2008-07-03
繳交日期
Date of Submission
2008-07-17
關鍵字
Keywords
發光二極體、時間解析、光致電流
Time-resolved, LED, OBIC, Optical Beam Induced Current
統計
Statistics
本論文已被瀏覽 5652 次,被下載 1858
The thesis/dissertation has been browsed 5652 times, has been downloaded 1858 times.
中文摘要
時間解析技術已應用在發光二極體的研究。發光二極體並非高速元件,故我們透過電光調變器以改變雷射頻率以完成實驗。這技術在極短的時間擁有極高的空間解析度。使用鈦:藍寶石鎖模脈衝雷射、高頻相位靈敏鎖向迴路與雷射共焦掃描顯微鏡以取得發光二極體之時間解析動態特性。雷射用於激發在空乏區的載子以獲得相對的掃描影像訊號。我們可透過光致電流影像觀察發光二極體的光致電流效應及測量其反應時間。
Abstract
We have implemented the time-resolved technique at frequency domain on a laser scanning microscope to investigate light emitting diodes. Leds are not high-speed device, so we use e-o modulator to change its frequency of Laser and finish the experiment. In this way, temporal response of a device can be mapped at high spatial resolution. We are using a Ti : sapphire laser and a high frequency phase sensitive lock-in loop to achieve time-resolved the dynamics properties of the light emitting devices.Laser used to excite carriers in the depletion region detected form the contract signal for scanning imaging. We can observe the OBIC effect and measure the response time of light emitting devices.
目次 Table of Contents
中文摘要 I
英文摘要 II
致謝詞 III
目錄 IV
圖目錄 VI

第一章 簡介 01
1.1 研究動機 01
1.2 實驗導論 01

第二章 實驗架設 03
2.1電激發光實驗架設 03
2.2光致螢光實驗架設 04
2.3光致電流實驗架設 05

第三章 實驗結果 07
3.1樣品介紹 07
3.2發光二極體材料 09
3.3電激發光影像 10
3.4光致螢光影像 11
3.5直流光致電流影像 12
3.6時間解析光致電流影像 13
第一部份:(改變偏壓) 13
第二部份:(使用電光調變器改變頻率) 21

第四章 結論 27
4.1結論 27
4.2未來展望 28
附錄A 實驗原理 29
A-1發光二極體-電激發光原理 29
A-2發光二極體-光致螢光原理 30
A-3雙光子激發原理 31
A-4發光二極體-光致電流原理 33
A-5 DC OBIC, AC OBIC & Time-resolved OBIC 34

附錄B 實驗儀器 35
B-1雷射光源 35
B-2共焦顯微掃描系統 36
B-3低噪音電流前置放大器 36
B-4鎖向放大器 37
B-5電光調變器 38

附錄C Matlab程式 41
參考文獻 References
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[3] 王宏嘉,“結合時間解析電激發光顯微術暨雷射切割-觀測大尺寸LED電性”, 國立中山大學光電工程研究所碩士論文, 2006
[4] Chi-Kuang Sun, Kian-Giap Gan, Fu-Jen Kao, Mao-Kuo Huang, Yung-Shun Wamg. Michael P . Mack, and Steven p. Denbaars, “Two-photon Photoluminescence and current image of bulk GaN and InGaN Green LEDs”, IEEE, 1999
[5] Reinhard stengl, “High-voltage planar Junctions investigated by the OBIC method”, IEEE, 1987
[6] Koshi Haraguchi, “Microscopic Optical Beam Induced Current Measurement and their Application, IEEE, 1994
[7] Fu-Jen Kao, Mao-Kuo Huang, Yung-Shun Wang, Sheng-Lung Huang, Ming-Kwei Lee, and Chi-Kuang Sun, “Two-photon optical-beam-induced current imaging of indium gallium nitride blue light-emitting diodes”, Optical Society of America, 1999
[8] J.M. Chin, J.C.H. Phang, D.S.H. Chan, C.E. soh, G. Gilfeather, “Single Contact Optical Beam Induced Current- A New Failure Analysis Technique ”, IEEE, 2000
[9] Yosuke Morita, Koichi Wakita, “Response speed and optical investigation of InGaN/GaN multiple quantum well LED”, Scripta Technica, 2001
[10] Tatsuya Takeshita, Mitsuo Yamamoto, Ryuzo Iga, Mitsuru Sugo, Yasuhiro Kondo, and Kazutoshi Kato, “Analysis of Wear-Out Degradation of a DFB Laser Using an Optical-Beam-Induced Current Monitor, IEEE, 2007
[11] 廖育麒, ’’時間解析之光致電流顯微術”, 國立中山大學光電工程研究所碩士論文, 2005
[12] 劉泰成, ”有機光電元件之時間解析光致電流顯微術”, 國立中山大學光電工程研究所碩士論文, 2006
[13] Epistar corporation “InGaN Venus Green LED Chip”
[14] Sung-Nam Lee, H. S. Paek, H. Kim, T. Jang, and Y. Park, “Monolithic InGaN-based white light-emitting diodes with blue, green, and amber emissions”, Applied Physics Letter, 2008
[15] Adel S. Sedra, Kenneth C. Smith, “Microelectronic Circuits”, Fourth edition
[16] S.M. Sze, “SEMICONDUCTOR DEVICE Physics and Technology”,
fourth edition, Chapter 3, 75-81
[17] Arthur Beiser, “Modern Physics”, Sixth edition, Chapter 2, 52-67
[18] Conoptics INC., “Electro-optic components and systems”
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