Responsive image
博碩士論文 etd-0718106-130733 詳細資訊
Title page for etd-0718106-130733
論文名稱
Title
以溶膠-凝膠半導體材料於薄膜電晶體之應用與研究
Study of Sol-gel semiconductor material for TFTs application
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
56
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2006-07-07
繳交日期
Date of Submission
2006-07-18
關鍵字
Keywords
薄膜電晶體
spin-coating method, sol-gel, TFT
統計
Statistics
本論文已被瀏覽 5705 次,被下載 0
The thesis/dissertation has been browsed 5705 times, has been downloaded 0 times.
中文摘要
半導體氧化鋅(ZnO)的能隙(~3.3 eV)處於不易吸收可見光的能量範圍,且擁有較高的載子遷移率,將此透明半導體層應用於液晶顯示器時,將可降低薄膜電晶體對可見光的敏感性、增加顯示畫素的開口率。再此我們欲發展一溶膠凝膠(sol-gel)的氧化鋅旋塗沉積技術(spin-on-deposition)製作氧化鋅薄膜電晶體。此溶膠凝膠氧化鋅薄膜可於常溫下進行旋轉塗佈的沉積,相較於傳統成膜的真空系統,此旋塗沈積的技術將可節省製程的成本並提升產能。實驗中我們藉由調變退火的溫度及退火的儀器來取得一個較理想化的元件特性。藉由FTIR、SEM,N&K等材料分析以研究旋轉塗佈之半導體氧化鋅薄膜的基本特性,氧化鋅薄膜電晶體電性由 I-V量測系統所量得。
Abstract
ZnO (Zinc-oxide) is a wide bandgap (Eg~3.3 ev ) semiconductor material , it is transparent in the visible region of the spectra and therefore, also less light sensitive. ZnO-based TFT can increase the field mobility, improve the opening of AMLCD pixel and the problem of photo-excited leakage current. Here we demonstrate ZnO-based TFT which was fabricated by sol-gel material through spin-coating deposition method. The process of spin-costing deposition provides a more efficient way for depositing device components and low cost than vacuum techniques. In the experiment we controlled the conductive and carrier concentration by different annealing temperature and different annealing equipment for optimizing our device characteristic. The material analysis of ZnO film is discussed by FTIR, SEM, and n&k. The electrical characteristic was measured by the I-V measurement system.
目次 Table of Contents
Abstract(Chinese)………………………..……I
Abstract(English)…………………………......II
Figure Caption……………………………......Ⅴ
Chapter 1 Introduction
1.1 General Background………………1
1.2 Motivation ………………………..5
1.3 Organization of This Thesis………6
Chapter 2 The fabrication of ZnO-based TFT
2.1 fabrication…………………………..8
2.2 The experiment flow………………..10
2.2.1 experiment flow…………………..10
2.2.2 spin-coating deposition…………...10
2.2.3 Patterning ZnO films via photo lithography……………………………...11
2.2.4 Different annealing treatment.........11
Chapter 3 Result and Discussion
3.1 Material analysis................................15
3.1.1 The XRD measurement of ZnO film..
………………………………………….15
3.1.2 The FTIR measurement of ZnO film..
………………………………………….15
3.1.3 The N&K measurement of ZnO film..
………………………………………….17
3.2 Electrical characteristic of ZnO-based TFT
…………………………………….17
3.2.1 Changing coating times…………..17
3.2.2 Two-step annealing…………….…18
3.2.3 Simulating in air…………………..19
3.3 Conventional structure……………...19
3.3.1 different oxygen partial pressure….21
3.3.2 Two-step annealing………………..22
3.3.3 The discussion……………………..22
Chapter 4 Conclusions
4.1 Conclusions……………………….…43
Reference………………………………..45
參考文獻 References
[1-1] Ü. Özgür,_ Ya. I. Alivov, C. Liu, A. Teke,_ M. A. Reshchikov, S. Doðan,_ V. Avrutin, S.-J. Cho, and H. Morkoç_ JOURNAL OF APPLIED PHYSICS 98, 041301 (2005)
[2-1] J. Nishii et al. “High mobility thin film transistor with transparent ZnO channels,” Jpn. J. Appl. Phys. Vol. 42, p. L347 (2003)
[2-2] S. Masuda et al. “Transparent thin film transistors using ZnO as an active channel layer and their electrical properties.” J. Appl. Phys. Vol.93, No.3, p.1624 (2003)
[2-3] Junya NISHII, Faruque M. HOSSAIN, Shingo TAKAGI, Jpn. J. Appl. Phys. Vol. 42 (2003) pp. L 347–L 349
[2-4] S. Walsh[ Wetch Etching fo Semiconductor Fabrication, Janus Ventures Inc.]
[2-5] B. Schwartz, H. Robbins [J. ElectroChem Soc. 10B, 365 (1961)]
[2-6] Jen Hao Lee, Pang Lin, Jia Chong Ho, and Cheng Chung Lee, Electrochemical and Solid-State Letters, 9 (4) G117-G120 (2006)
[2-7] B J Norris, J Anderson, J F Wager and D A Keszler, J. Phys. D: Appl. Phys. 36 (2003) L105–L107
[3-1] Jen Hao Lee, Pang Lin, Jia Chong Ho, and Cheng Chung Lee, Electrochemical and Solid-State Letters, 9 (4) G117-G120 (2006)
[3-2] B J Norris, J Anderson, J F Wager and D A Keszler, J. Phys. D: Appl. Phys. 36 (2003) L105–L107
[3-3] Masanobu Izakia, and Junichi Katayama Journal of The Electrochemical Society, 147 (1) 210-213 (2000)
[3-4] R E Presley, C L Munsee, C-H Park, D Hong, J F Wager and D A Keszler J. Phys. D: Appl. Phys. 37 (2004) 2810–2813
電子全文 Fulltext
本電子全文僅授權使用者為學術研究之目的,進行個人非營利性質之檢索、閱讀、列印。請遵守中華民國著作權法之相關規定,切勿任意重製、散佈、改作、轉貼、播送,以免觸法。
論文使用權限 Thesis access permission:校內校外均不公開 not available
開放時間 Available:
校內 Campus:永不公開 not available
校外 Off-campus:永不公開 not available

您的 IP(校外) 位址是 44.222.242.27
論文開放下載的時間是 校外不公開

Your IP address is 44.222.242.27
This thesis will be available to you on Indicate off-campus access is not available.

紙本論文 Printed copies
紙本論文的公開資訊在102學年度以後相對較為完整。如果需要查詢101學年度以前的紙本論文公開資訊,請聯繫圖資處紙本論文服務櫃台。如有不便之處敬請見諒。
開放時間 available 已公開 available

QR Code