本文內容主要為InGaAs/AlInAs奈米線在0.3 K下Shubnikov-de Hass (SdH)量測的電子傳導研究。為了研究通道寬度對二維電子氣影響，我們用聚焦電子束製作700 nm到1400 nm的不同寬度。我們探討在AlGaAs
/AlInAs奈米線不同閘極電壓下的I-V特性，並觀察到其工作範圍在-3 V到3 V之間。於0.3 K下，經照光後，Sample InGaAs-1400 nm的載子濃度有增加的趨勢並且觀察樣品有正持續光導效應。在經過0.3 K的SdH量測後，我們在77 K下觀察到樣品的飽和電流，但在不同閘極電壓下並無任何變化。

We have studied the electronic properties of InGaAs/AlInAs nano wire by using Shubnikov-de Hass (SdH)measurement at 0.3K.In order to study the effect of the channel width on the 2DEG,we made the nanometer-scaled 2DEG channels varied with different widths from 700 nm to 1400 nm by focus ion beam. On the AlGaAs/AlInAs nanowires we have studied I-V characteristics with gate-voltage and observed the work range from -3 V to 3 V. After illuminating at 0.3 K, the carrier density of the sample InGaAs-1400 nm increased and observed the persistent photoconductivity effect. After SdH measurement at 0.3 K, we found saturation current of these samples at 77 K but did not observe change with different gate voltage.

中文摘要 .3
英文摘要 4


第一章 簡介
1-1 　前言..................................................7
1-2 InGaAs/InAlAs/InP 材料介紹...........................10

第二章 理論部份
2-1 量子井二維電子氣的電子特性...........................13
2-2 Shubnikov-de Hass effect.............................19
2-3 量子霍爾效應(Quantum Hall Effect；QHE) ..............20
2-4 正持續光導效應與負持續光導效應.......................21


第三章 實驗儀器與步驟
3-1 讀取數據軟體........................................24
3-2 程式與儀器接線.......................................24
3-2-1 漏電量測(Vg - Id).....................................25
3-2-2 飽和電流量測(Vsd -Id).................................27
3-2-3 SdH量測.............................................29
3-2-4 QHE量測............................................30
3-2-5 Resistance(V-I，Rxx)及RH量測.........................33
3-4 SdH數據處理-快速傅立葉轉換..........................37

第四章 實驗結果與分析
4-1 樣品備製.............................................41
4-2 實驗結果
4-2-1 Sample InGaAs-1400 nm ..............................46
4-2-2 Sample InGaAs-900 nm ................................58
4-2-3 Sample InGaAs-700 nm ...............................70


第五章 結論.................................................82

References..................................................86

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