m-平面氧化鋅（ZnO）在室溫下(300K)的非接觸式電場調制反射率光譜，可以觀察到氧化鋅對於垂直C軸和平行C軸偏振入射光之光譜有顯著的不同。此外，在對樣品施加一激發光，使其內建電場降低，可以觀察到受到激發之光譜相對於原光譜圖形有藍位移現象，此結果可以推論氧化鋅為激子躍遷。對於光譜圖形以勞倫茲形式的曲線擬合實驗得到的光譜圖形，觀察氧化鋅（ZnO）的激子A(B)、B(A)和C之躍遷能量分別為3.329eV、3.343eV、3.387eV。

The contactless electroreflectance（CER） spectra of ZnO bulk has been measured at 300K. It was observed the difference between the CER spectra by using the polarization E of probe light perpendicular ( E⊥c) and parallel ( E∥c) to the c-axis of the m-plane ZnO. In addition, a mercury lamp was focused on the sample to reduce its strength of electric field. It was observed that the CER spectrum was blue-shifted with Hg lamp being on. Hence, the observed features were attributed to excitonic transitions. The experimental spectra were fitted by Lorentzian lineshapes. The energies of the A ( B）, B（A）, and C excitonic transitions were determined as 3.329eV, 3.343eV and 3.387eV, respectively.

第一章 導論及相關理論 1
1.1 前言 1
1.2 半導體介紹 2
1.3 直接能隙與間接能隙半導體 3
1.4 激子＜9＞ 4
第二章 調製光譜 6
2.1 調製光譜學簡介 6
2.2 調制光譜學機制 7
2.3 電子躍遷理論 8
2.4 反射率、吸收係數與介電函數 11
2.5 譜線圖形性質 17
低電場調制 18
中電場調制（FKOs效應） 20
第三章 實驗樣品與裝置 23
3.1 實驗樣品 23
3.2 實驗裝置與架設 25
第四章 實驗結果與分析 27
4.1 實驗圖形分析 27
4.2 實驗數據分析 29
4.3 實驗結果討論 34
第五章 結論 36
Reference 37

1. Annabel Wood, Michael Giersig, Michael Hilgendorff, Augst. J. Chem, 56, 1051-1057（2003）
2. Y. Chen, N. T. Tuan, Y. Segawa, H. Ko, S. Hong and T. Yao, Appl. Phys. Lett. 78（2001）1469
3. See, for example, R. N. Bhattacharya, H. Shen, P. Parayanthal, and F. H. Pollak, Phys. Rev. B 37, 4004（1988）
4. C. H. Ho, S. L. Lin, C. C. Wu, Phys. Rev. B 72, 125313（2005）
5. Ching-Hwa Ho, Horng-Wen Lee, Review of Scientific Instruments, Vol. 75, Num, 4（2004）
6. S. F. Chichibu, A. Tsukazaki, M. Kawasaki, K. Tamura, Y. Segawa, T. Sota and H. Koinuma, Appl. Phys. Lett. 80, 2860（2002）
7. X. Yin and Fred H. Pollak, Appl. Phys. Lett. 59, 2305（1991）
8. X. Yin, Xinxin Guo, and Fred H.Pollak, Appl. Phys. Lett. 60, 1336（1992）
9. D. E. Aspnes: Optical properties of Solids, edited by M. Balkanski（North-Holland, Amsterdam, 1980）
10. D. C. Reynolds, D. C. Look, B. Jogai, C. W. Litton, G. Cantwell and W. C. Harsch: Phys. Rev. B 60 (1999) 2340[APS]
11. J. J. Hopfield: J. Phys. Chem. Solids 15 (1960) 97
12. B. Gil: Phys. Rev. B 64 (2001) 201310
13. M. Cardona, in Modulation Spectroscopy(Academic, New York, 1969).
14. F. H. Pollak, in Hand book on Semiconductors, edited by M.Balkanski(North-Holland, New York,1994).
15. H. Shen and M.Dutta,J Appl. Phys. 78, 2151 (1995).
16. See, for example, R. N. Bhattacharya, H. Shen, P. Parayanthal, and F.H. Pollak, Phys. Rev. B37,4004 (1988).
17. B. O. Seraphin and N. Bottka, Phys. Rev, 145, 628 (1966).
18. Z.Hang, Ph. D. thesis, City University of New York, 1991(unpublished).
19. D. F. Blossey, Phys.Rev.B 2, 3976 (1970).
20. R. Kudrawiec, J. Appl. Phys. 100, 013501（2006）
21. K. Seager, Semiconductor Physics(學風科學圖書出版社, 新竹), 1986 and references therein.
22. D. E. Aspnes, Surf. Sci. 37, 418 (1973).
23. N. Pandey Lakshmi and F. George Thomas, “Interband Transitions in Quantum Well Heterostructures with Delta-doped Barriers”, Appl. Phys. Lett. 61, 1081(1992).
24. P. Y. Yu and M. Cardona, Fundamentals of Semicoductors：Physics and Materials Properties（New York,1996,springer）.
25. Ya. I. Alivov and J. E. Van Nostrand, Appl. Phys. Lett. 83. 14（2003）.
26. D. R. Sahu and Jow-Lay Huang, Applied Surface Science. 253. （2006）915-918.
27. D. G. Tomas: J. Phys. Chem. Solids 15 (1960) 86.
28. D. G. Thomas and J. J. Hopfield: Phys. Rev. 116 (1959) 573.
29. H. Yoshikawa and S. Adachi: J. Appl. Phys. (1997) vol.36 pp.6237-6243.
30. Shunji OZAKI, Takehito MISHIMA and Sadao ADACHI: J. Appl. Phys. (2003) vol.42 pp.5465-5471.