摘要
因應新時代電子產品的需求，透明導電膜的應用也更加廣泛，因氧化銦錫薄膜（簡稱ITO）在高溫應用上較不穩定，因此，氧化鋅摻雜鋁薄膜（ZnO:Al, AZO）有逐漸取代ITO的趨勢。本實驗則是利用射頻反應磁控共焦濺鍍法（RF reactive magnetron co-sputtering）成長ZnO薄膜及ZnO:Al薄膜。
主要是藉由膜厚的變化來探討ZnO薄膜之成長機制，在反應濺鍍的環境中，氧分壓對薄膜厚度之生成，扮演著極重要的角色；進而由此實驗參數中，找出一組較佳之製程參數，搭配鋁的摻雜，探討鋁靶功率與氧分率對ZnO:Al薄膜之性質有何影響。

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第一章 前言 1
1.1 背景介紹 1
1.2 研究目的 2
第二章 理論基礎與文獻回顧 3
2.1 透明導電膜的介紹 3
2.2 氧化鋅的介紹 5
2.3 濺鍍原理 7
2.4 折射率與波長關係式之計算理論 11
第三章 實驗方法與儀器設備 18
3.1 實驗設計 18
3.2 實驗流程圖 19
3.3 實驗方法及設備 20
3.4 折射率與波長關係式之計算 24
第四章 結果與討論 27
4.1 氧化鋅薄膜之成長機制 27
4.1.1 薄膜厚度變化 27
4.1.2 基板溫度效應 28
4.1.3 光學性質 29
4.2 鋁摻雜對氧化鋅薄膜之影響 30
4.2.1 沈積速率 31
4.2.2 微結構 31
4.2.3 鍵結與組成分析 32
4.2.4 光學性質 33
4.2.5 電性性質 33
第五章 結論 35
參考文獻…………..……………………………………………..37

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