本研究是在n+-GaAs基板和半絕緣的砷化鎵基板上，以超高真空分子束磊晶系統來成長銻化鎵薄膜，接著再鍍上不同的金屬，探討不同銻/鎵比值(Sb4/Ga ratio)對pn接面和蕭特基接面之位障有何影響。為了成長出高品質的銻化鎵薄膜，我們分別以不同的Ⅴ/Ⅲ比值和基板溫度來成長銻化鎵薄膜，並以X-ray繞射和電流電壓關係曲線圖來觀察其形成的薄膜特性。可知當基板溫度為500 ℃、Ⅴ/Ⅲ = 2.5，為p-n二極體形成時的最佳成長條件。
我們從蕭特基二極體的電流電壓關係圖可看出，當銻/鎵之比值越高時，其崩潰電壓會越低。此外，我們可藉由其電流電壓特性來研究GaSb/GaAs和金屬/GaSb之異質界面的特性。也可知其漏電流和表面狀態密度是與Ⅴ/Ⅲ比值有相當程度之關係。
而從熱離子放射理論可知，當銻/鎵比值越高時，其障位高度也會越低。在GaSb磊晶層上沈積金屬形成蕭特基二極體之後，我們可藉由量測出蕭特基二極體之電流電壓特性，來獲得金屬功函數和障位高度之關係，並且進一步地計算出表面狀態密度之值。最後，我們將會發現當Ⅴ/Ⅲ比值增加時，其表面狀態密度將隨之遞減。

This study presents the GaSb epitaxial grown by molecular beam epitaxy (MBE) on the semi-insulating GaAs substrate and n+-GaAs substrate. Investigations are made to the effect of Sb4/Ga beam equivalent pressure (BEP) ratios on the current-voltage characteristics of the p-n hetero-junction and the metal-GaSb semiconductor Schottky contact for various metals deposited on n-type GaSb layers. Several growth conditions were taken to improve the quality of GaSb epitaxial films. The structure of GaSb epitaxial layers are characterized by the X-ray diffraction, and the optimum growth conditions 500℃ of substrate temperature and the Sb4/Ga flux ratio about 2~3 have been obtained.
From the I-V curve of GaSb Schottky diodes, we know that the higher Sb4/Ga ratio will induce the lower breakdown voltage. Hence, the interface properties of hetero-junction between the GaSb/GaAs and metal/GaSb can be investigated by the current-voltage characteristics, in which the current leakages and the surface state density are strongly dependent on the ratio of Sb4/Ga BEP.
Based on the thermionic emission theory, the barrier height obtained was decrease with the Sb4/Ga ratio increases. After metal deposited on the GaSb epitaxial film to form the Schottky diode, the density of surface states can be calculated from the relationship of metal work-function and barrier height, which were obtained from the current-voltage characteristics of Schottky diode measurement, and then it also found that the density of surface states show decrease as the Sb4/Ga ratio increase.

頁次
中文審定書
英文審定書
誌謝 ……………………………………………….… Ⅰ
中文摘要 ……………………………………………….… Ⅱ
英文摘要 ……………………………………………….… Ⅲ
目錄 ……………………………………………….… Ⅳ
圖表目錄 ……………………………………………….… Ⅶ

第一章 緒論………………………………………….… 1
1-1 前言………………………………………….… 1
1-2 歷史發展與背景…………………………….… 2
1-3 研究目的…………………………………….… 4
1-4 論文架構…………………………………….… 5
第二章 銻化鎵的成長特性與蕭特基位障理論………. 7
2-1 銻化鎵之特性與其重要性………………….… 7
2-2 GaSb/GaAs異質接面之理論公式…………..… 8
2-2.1 異質接面能帶結構 8
2-2.2 理想的I-V特性...………………….………….. 14
2-2.3 實際的I-V特性...………………….………….. 15
2-3 蕭特基位障之理論公式………………………. 16
2-3.1 文獻........…………………………..................... 17
2-3.2 金屬-半導體出現在表面狀態的表面障礙理論 18
2-3.3 Schottky二極體的電流傳輸機制…………….. 21
2-3.4 Schottky二極體的電流電壓關係…………….. 22
第三章 實驗方法與步驟…………………………….… 27
3-1 MBE成長技術…………...……………………. 27
3-1.1 MBE系統…………...…………………………. 27
3-1.2 成長環境…………...………………………… 28
3-2 MBE成長銻化鎵薄膜.......……………………. 31
3-2.1 蒸鍍源處理……………………………………. 31
3-2.2 基板處理…………………………………….… 32
3-2.3 實驗步驟............................................................. 32
3-3 不同的Ⅴ/Ⅲ比值對蕭特基二極體特性之影響 33
3-3.1 樣品製備..………………………………...…… 33
3-3.2 實驗步驟………………………………………. 34
3-4 量測儀器............................................................. 35
3-6.1 X-ray…………………………………………… 35
第四章 實驗結果與分析……………………………. 38
4-1 銻化鎵之結構分析……………………………. 38
4-2 銻化鎵之電性分析…………………..………... 39
4-3 不同的Ⅴ�Ⅲ比值對蕭特基二極體的影響…. 40
第五章 結論……………………………………………. 43
參考文獻 …………………………………………………………....... 68

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