我們利用聚焦離子束（FIB）在InGaAs/AlInAs異質結構上做成奈米線（nanowires）結構，其中線寬分別為40nm、70nm、100nm與200nm。我們再利用Shubnikov-de Haas（SdH）量測來研究奈米線結構的電子特性。在此研究中，經過SdH的量測，發現有經過FIB的樣品所測量到的訊號都是雜訊，於是我們改變製作樣品的過程，例如：增加保護層的厚度、改變通道大小等等。

On InGaAs/AlInAs heterostructures we made nanowires which were made by focus ion beam (FIB) and the width of nanowires making by FIB were 40nm、70nm、100nm and 200nm respectively. we studied electronic characterization of nanowires using Shubnikov-de Haas(SdH).In our research,by using SdH method there are no signal in our sample which processed by FIB,then we changed to process technology in our sample.For example: Increase thickness of the protection layer,size of change channel,etc.

第一章 簡介............................................. 7
第二章 實驗基本原理
2-1 霍爾效應.......................................... 12
2-2 量子霍爾效應...................................... 15
2-3 正持續光導效應(PPC)及負持續光導效應(NPPC)......... 16
2-4 電子束蒸鍍原理.................................... 17
2-5 濺鍍原理.......................................... 19
2-6 聚焦離子束原理.................................... 22
2-7 快速退火原理...................................... 25
第三章 實驗儀器與步驟
3-1 霍爾實驗.......................................... 27
3-2 電子束蒸鍍........................................ 37
3-3 濺鍍機............................................ 40
3-4 超音波鋁線銲線機.................................. 42
6
第四章 奈米線製成分析
4-1 實驗樣品.......................................... 45
4-2 奈米線製作過程與分析.............................. 52
第五章 結論
5-1 實驗樣品.......................................... 78
5-2 未來方向.......................................... 79
References…………………………………………………………… 80

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