本文主要是探討以電漿輔助分子束磊晶(Plasma-assisted molecular-beam
epitaxy)在鋁酸鋰(LiAlO 2 )基板成長氮化鎵(GaN)薄膜特性之研究。γ- LiAlO 2 基
板與氮化鎵晶格晶格常數接近，使得不匹配率(Lattice mismatch)較其他基板來得
低可減少缺陷(defect)的產生，提升結晶品質。當然，一定程度的晶格不匹配仍
然存在著，以至於或多或少還是會有缺陷在晶體內被觀察到，高成長溫度能有效
降低缺陷的產生，在此研究以一系列樣品主要以成長溫度做為改變參數，再由掃
描式電子顯微鏡(SEM)和原子力顯微鏡(AFM)展示樣品表面之特徵，以及 X 光繞
射分析(XRD)和光致螢光(PL)用以分析樣品結晶結構、結晶品質等特性。

We study the properties of m-plane GaN structure on LiAlO 2 substrate grown by
plasma-assisted molecular-beam epitaxy (PAMBE). Lattice parameters of LiAlO 2 are
close to GaN, the interface between LiAlO 2 and GaN showed a good lattice matching.
Low lattice mismatch can reduce the defect generation, improve crystal quality.
However, lattice mismatch still exist, more or less density of defect still can be
observed. The density of defect was reduced in the sample at high temperature.
In this study, we investigate GaN on LiAlO 2 by scanning electron microscope
(SEM), atomic force microscope (AFM), photoluminescence (PL) and X-ray
diffraction (XRD) for different growth temperatures.

論文審定書
誌謝
中文摘要…………………………………………………………………ii
英文摘要..…………………………………………………………...…..iii
第一章 簡介..…………………………………………..…….……….1
第二章 儀器原理……………………………………………………4
2.1 掃描式電子顯微鏡(SEM) ………………………………4
2.2光致螢光(PL)……………………………………………..5
2.3 X光繞射儀(XRD)………………………………………..7
2.4原子力顯微鏡(AFM)……………………………………..8
第三章 儀器操作步驟………………………………………….….10
3.1掃描式電子顯微鏡…………………………….…….…10
3.2光致螢光………………………………………………..12
第四章 實驗分析結果……………………………………………..13
4.1 SEM分析結果…………………………………………..14
4.2 AFM分析結果…………………………………………..23
4.3 PL分析結果……………………...………………….….30
4.4 XRD分析結果……………………………….………….34
4.5與無傾角基板樣品比較………………………………...37
第五章 結論…………………………………………….…….……39
參考文獻…………………………………………………………….….41

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